High-voltage edge termination for planar structures

• US 6,376,890 B1
• Filed: 12/08/1999
• Issued: 04/23/2002
• Est. Priority Date: 04/08/1998
• Status: Expired due to Term

• Current Assignee: Infineon Technologies AG
• Original Assignee: Siemens AG
• Inventors: Tihanyi, Jenoe
• Primary Examiner(s): Thomas, Tom
• Assistant Examiner(s): Hu, Shouxiang
• Application Number:
  US09/457,225
• Time in Patent Office: 867 Days
• Field of Search: 257/483, 257/484, 257/409, 257/129, 257/168, 257/339
• US Class Current: 257/483
• CPC Class Codes: H01L 29/0615 by the doping profile or the shape or the arrangement of the PN junction, or with supplementary regions, e.g. junction termination extension [JTE] LDD or drain offset regions H01L29/7833
• CPC Class Codes: H01L 29/0623 Buried supplementary region, e.g. buried guard ring multi-RESURF H01L29/0634
• CPC Class Codes: H01L 29/0634 Multiple reduced surface field (multi-RESURF) structures, e.g. double RESURF, charge compensation, cool, superjunction (SJ), 3D-RESURF, composite buffer (CB) structures
• CPC Class Codes: H01L 29/0653 adjoining the input or output region of a field-effect device, e.g. the source or drain region
• CPC Class Codes: H01L 29/402 Field plates
• CPC Class Codes: H01L 29/7811 with an edge termination structure guard regions per se H01L29/0619; field plates per se H01L29/402
• CPC Class Codes: H01L 29/7813 with trench gate electrode, e.g. UMOS transistors trench gate electrodes per se H01L29/4236

Abstract

A high-voltage edge termination structure for planar structures. The planar structures have a semiconductor body of a first conductivity type whose edge area is provided with at least one field plate isolated from the semiconductor body by an insulator layer. The edge area of the semiconductor body is provided with floating regions of a second conductivity type. The floating regions are spaced at such a distance from one another that zones between the floating regions are depleted even at an applied voltage which is low in comparison with a breakdown voltage of the semiconductor body for the floating regions.

Claims

1. A high-voltage edge termination structure for planar structures, comprising:

a semiconductor body having an edge area and formed of a first conductivity type;

an insulator layer disposed on said semiconductor body;

at least one field plate isolated from said semiconductor body by said insulator layer; and

floating regions of a second conductivity type disposed in said edge area of said semiconductor body, each one of said floating regions disposed on one of a plurality of substantially mutually parallel levels and spaced at a distance from one another causing zones between said floating regions to be completely depleted to form space-charge zones at an applied voltage which is low in comparison with a breakdown voltage of said floating regions.

2. The high-voltage edge termination structure according to claim 1, wherein said semiconductor body has a central area and said floating regions extend into said central area of said semiconductor body.

3. The high-voltage edge termination structure according to claim 1, wherein said semiconductor body has an edge and said floating regions have a wedge-shaped configuration with a narrowing thickness toward said edge of said semiconductor body.

4. The high-voltage edge termination structure according to claim 1, wherein said semiconductor body has an edge and said floating regions are of a layered configuration with a doping which becomes weaker toward said edge of said semiconductor body.

5. The high-voltage edge termination structure according to claim 1, wherein said semiconductor body has an edge and said floating regions each have a surface doping that decreases toward said edge of said semiconductor body from roughly between 10¹² and about 10¹³ cm⁻

2 to 0.

6. The high-voltage edge termination structure according to claim 1, wherein said at least one field plate is a plurality of field plates each having guard rings of said second conductivity type connected thereto.

7. The high-voltage edge termination structure according to claim 1, including an injector disposed on said semiconductor body for injecting charge carriers of said second conductivity type.

8. The high-voltage edge termination structure according to claim 1, including a Schottky contact disposed on said semiconductor body for injecting charge carriers of said second conductivity type.

9. The high-voltage edge termination structure according to claim 1, wherein said floating regions are islands embedded in said edge area of said semiconductor body.

10. The high-voltage edge termination structure according to claim 9, wherein said semiconductor body has an edge and said floating regions become smaller toward said edge of said semiconductor body.

11. The high-voltage edge termination structure according to claim 9, wherein said floating regions are substantially spherical shaped.

12. The high-voltage edge termination structure according to claim 11, wherein the distance between said floating regions is about 5 μ

m.

13. The high-voltage edge termination structure according to claim 11, wherein said floating regions have a diameter of about 5 μ

m.

14. The high-voltage edge termination structure according to claim 13, wherein said floating regions have a surface doping of about 10¹² to 10¹³ cm⁻

2.