High-voltage edge termination for planar structures
First Claim
Patent Images
1. A high-voltage edge termination structure for planar structures, comprising:
- a semiconductor body having an edge area and formed of a first conductivity type;
an insulator layer disposed on said semiconductor body;
at least one field plate isolated from said semiconductor body by said insulator layer; and
floating regions of a second conductivity type disposed in said edge area of said semiconductor body, each one of said floating regions disposed on one of a plurality of substantially mutually parallel levels and spaced at a distance from one another causing zones between said floating regions to be completely depleted to form space-charge zones at an applied voltage which is low in comparison with a breakdown voltage of said floating regions.
2 Assignments
0 Petitions
Accused Products
Abstract
A high-voltage edge termination structure for planar structures. The planar structures have a semiconductor body of a first conductivity type whose edge area is provided with at least one field plate isolated from the semiconductor body by an insulator layer. The edge area of the semiconductor body is provided with floating regions of a second conductivity type. The floating regions are spaced at such a distance from one another that zones between the floating regions are depleted even at an applied voltage which is low in comparison with a breakdown voltage of the semiconductor body for the floating regions.
-
Citations
14 Claims
-
1. A high-voltage edge termination structure for planar structures, comprising:
-
a semiconductor body having an edge area and formed of a first conductivity type;
an insulator layer disposed on said semiconductor body;
at least one field plate isolated from said semiconductor body by said insulator layer; and
floating regions of a second conductivity type disposed in said edge area of said semiconductor body, each one of said floating regions disposed on one of a plurality of substantially mutually parallel levels and spaced at a distance from one another causing zones between said floating regions to be completely depleted to form space-charge zones at an applied voltage which is low in comparison with a breakdown voltage of said floating regions. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14)
-
Specification