High-Q inductive elements

• US 6,376,895 B2
• Filed: 12/20/1999
• Issued: 04/23/2002
• Est. Priority Date: 04/29/1998
• Status: Expired due to Term

• Current Assignee: Micron Technology, Inc.
• Original Assignee: Micron Technology, Inc.
• Inventors: Farrar, Paul A., Forbes, Leonard
• Primary Examiner(s): Lee, Eddie
• Assistant Examiner(s): Fenty, Jesse A.
• Application Number:
  US09/467,991
• Publication Number:
  US 20010016409A1
• Time in Patent Office: 855 Days
• Field of Search: 438/619, 438/622, 438/624, 257/528, 257/531, 257/522, 257/774, 257/758, 257/759, 257/760
• US Class Current: 257/531
• CPC Class Codes: H01F 41/041 Printed circuit coils apparatus or processes for manufacturing printed circuits in general H05K3/00
• CPC Class Codes: H01L 27/08 including only semiconductor components of a single kind
• CPC Class Codes: H01L 28/10 Inductors

Abstract

A first insulator is formed on a base layer. A first conductor is formed on the first insulator. The first conductor is patterned. A second insulator is formed over the first insulator. A via hole is formed in the second insulator and is electrically coupled to the first conductor through the via hole. A second conductor is formed on the second insulator, and is electrically coupled to the first conductor by the via hole. The second conductor is patterned. A cavity is formed under the second conductor, and in the first and second insulators.

Claims

1. A communications device, comprising:

a transmitter, including;

a semiconductor device, and

an inductive element, operatively coupled to the semiconductor device, including;

a base layer,

a first insulator formed on the base layer,

a first conductor formed on the first insulator,

a second insulator formed on the first insulator,

a second conductor, having first and second branches that are substantially parallel, formed on the second insulator,

a via in the second insulator coupling the first and second conductors,

an insulator cavity, under the second conductor, in the first and second insulators, and

a support structure, in the insulator cavity, which supports the second conductor above the base layer.

2. The communications device of claim 1, wherein a second via in the support structure of the inductive element couples the first and second conductors.

3. The communications device of claim 1, wherein the insulator cavity is filled with a polymer.

4. The communications device of claim 3, wherein the polymer is a foam.

5. The communications device of claim 1, wherein the second conductor of the inductive element further comprises a conductive pad that covers the support structure.

6. A communications device, comprising:

a transmitter, including;

a semiconductor device, and

an inductive element, operatively coupled to the semiconductor device, including;

a base layer,

a first conductor buried in the base layer,

an insulator formed on the base layer,

a second conductor, having first and second branches that are substantially parallel, formed on the second insulator,

a plug, in the base layer, coupled to the first conductor,

a via in the insulator coupling the plug to the second conductor,

an insulator cavity, under the second conductor, in the insulator, and

a support structure, in the insulator cavity, which supports the second conductor above the base layer.

7. The communications device of claim 6, wherein the first conductor of the inductive element is positioned between two buried insulators.

8. The communications device of claim 6, further comprising a second via in the support structure of the inductive element that couples the first and second conductors.

9. The communications device of claim 6, wherein the insulator cavity is filled with a polymer.

10. The communications device of claim 9, wherein the polymer is a foam.

11. The communications device of claim 6, wherein the second conductor of the inductive element further comprises a conductive pad that covers the support structure.

12. A communications device, comprising:

a receiver including;

a semiconductor device, and

an inductive element, operatively coupled to the semiconductor device, including;

a base layer,

a first insulator formed on the base layer,

a first conductor formed on the first insulator,

a second insulator formed on the first insulator,

a second conductor, having first and second branches that are substantially parallel, formed on the second insulator,

a via in the second insulator coupling the first and second conductors,

an insulator cavity, under the second conductor, in the first and second insulators, and

a support structure, in the insulator cavity, which supports the second conductor above the base layer.

13. The communications device of claim 12, wherein a second via in the support structure of the inductive element couples the first and second conductors.

14. The communications device of claim 12, wherein the insulator cavity is filled with a polymer.

15. The communications device of claim 14, wherein the polymer is a foam.

16. The communications device of claim 12, wherein the second conductor of the inductive element further comprises a conductive pad that covers the support structure.

17. A communications device, comprising:

a receiver, including;

a semiconductor device, and

an inductive element, operatively coupled to the semiconductor device, including;

a base layer,

a first conductor buried in the base layer,

an insulator formed on the base layer,

a second conductor, having first and second branches that are substantially parallel, formed on the second insulator,

a plug, in the base layer, coupled to the first conductor,

a via in the insulator coupling the plug to the second conductor,

an insulator cavity, under the second conductor, in the insulator, and

a support structure, in the insulator cavity, which supports the second conductor above the base layer.

18. The communications device of claim 17, wherein the first conductor of the inductive element is positioned between two buried insulators.

19. The communications device of claim 17, further comprising a second via in the support structure of the inductive element that couples the first and second conductors.

20. The communications device of claim 17, wherein the insulator cavity is filled with a polymer.

21. The communications device of claim 20, wherein the polymer is a foam.

22. The communications device of claim 17, wherein the second conductor of the inductive element further comprises a conductive pad that covers the support structure.

23. A communications device, comprising:

a transmitter, including;

a semiconductor device, and

an inductive element, operatively coupled to the semiconductor device, including;

a first insulator on a base layer;

a first conductor on the first insulator;

a second insulator, formed over the first insulator, from a low dielectric inorganic insulator;

a via in the second insulator; and

a second conductor, formed on the second insulator, that is coupled to the first conductor by the via; and

wherein the first and second conductors form substantially parallel branches.

24. The communications device of claim 23, wherein the second insulator comprises porous silicon.

25. A communications device, comprising:

a receiver, including;

a semiconductor device, and

an inductive element, operatively coupled to the semiconductor device, including;

a first insulator on a base layer;

a first conductor on the first insulator;

a second insulator, formed over the first insulator, from a low dielectric inorganic insulator;

a via in the second insulator; and

a second conductor, formed on the second insulator, that is coupled to the first conductor by the via; and

wherein the first and second conductors form substantially parallel branches.

26. The communications device of claim 25, wherein the second insulator comprises porous silicon.

27. A communications system, comprising:

a receiver, and

a transmitter,

wherein at least one of the receiver and the transmitter includes;

a semiconductor device, and

an inductive element, operatively coupled to the semiconductor device, including;

a base layer,

a first insulator formed on the base layer,

a first conductor formed on the first insulator,

a second insulator formed on the first insulator,

a second conductor, having first and second branches that are substantially parallel, formed on the second insulator,

a via in the second insulator coupling the first and second conductors,

an insulator cavity, under the second conductor, in the first and second insulators, and

a support structure, in the insulator cavity, which supports the second conductor above the base layer.

28. A communications system, comprising:

a receiver, and

a transmitter,

wherein both the receiver and the transmitter include;

a semiconductor device, and

an inductive element, operatively coupled to the semiconductor device, including;

a base layer,

a first insulator formed on the base layer,

a first conductor formed on the first insulator,

a second insulator formed on the first insulator,

a second conductor, having first and second branches that are substantially parallel, formed on the second insulator,

a via in the second insulator coupling the first and second conductors,

an insulator cavity, under the second conductor, in the first and second insulators, and

a support structure, in the insulator cavity, which supports the second conductor above the base layer.

29. A communication system, comprising:

a receiver, and

a transmitter,

wherein at least one of the receiver and the transmitter includes;

a semiconductor device, and

an inductive element, operatively coupled to the semiconductor device, including;

a base layer,

a first conductor buried in the base layer,

an insulator formed on the base layer,

a second conductor, having first and second branches that are substantially parallel, formed on the second insulator,

a plug, in the base layer, coupled to the first conductor,

a via in the insulator coupling the plug to the second conductor,

an insulator cavity, under the second conductor, in the insulator, and

a support structure, in the insulator cavity, which supports the second conductor above the base layer.

30. A communications system, comprising:

a receiver, and

a transmitter,

wherein both the receiver and the transmitter include;

a semiconductor device, and

an inductive element, operatively coupled to the semiconductor device, including;

a base layer,

a first conductor buried in the base layer,

an insulator formed on the base layer,

a second conductor, having first and second branches that are substantially parallel, formed on the second insulator,

a plug, in the base layer, coupled to the first conductor,

a via in the insulator coupling the plug to the second conductor,

an insulator cavity, under the second conductor, in the insulator, and

a support structure, in the insulator cavity, which supports the second conductor above the base layer.

31. A communications system, comprising:

a receiver, and

a transmitter,

wherein at least one of the receiver and the transmitter includes;

a semiconductor device, and

an inductive element, operatively coupled to the semiconductor device, including;

a base layer,

a first insulator formed on the base layer,

a first conductor formed on the first insulator,

a second insulator formed on the first insulator,

a second conductor, having first and second branches that are substantially parallel, formed on the second insulator,

a via in the second insulator coupling the first and second conductors,

an insulator cavity, under the second conductor, in the first and second insulators, and

a support structure, in the insulator cavity, which supports the second conductor above the base layer.

32. A communications system, comprising:

a receiver, and

a transmitter,

wherein both the receiver and the transmitter include;

a semiconductor device, and

an inductive element, operatively coupled to the semiconductor device, including;

a base layer,

a first insulator formed on the base layer,

a first conductor formed on the first insulator,

a second insulator formed on the first insulator,

a second conductor, having first and second branches that are substantially parallel, formed on the second insulator,

a via in the second insulator coupling the first and second conductors,

an insulator cavity, under the second conductor, in the first and second insulators, and

a support structure, in the insulator cavity, which supports the second conductor above the base layer.

33. A communications system, comprising:

a receiver; and

a transmitter,

wherein at least one of the receiver and the transmitter includes;

a semiconductor device, and

an inductive element, operatively coupled to the semiconductor device, including;

a base layer,

a first conductor buried in the base layer,

an insulator formed on the base layer,

a second conductor, having first and second branches that are substantially parallel, formed on the second insulator,

a plug, in the base layer, coupled to the first conductor,

a via in the insulator coupling the plug to the second conductor,

an insulator cavity, under the second conductor, in the insulator, and

a support structure, in the insulator cavity, which supports the second conductor above the base layer.

34. A communications system, comprising:

a receiver; and

a transmitter,

wherein both the receiver and the transmitter include;

a semiconductor device, and

an inductive element, operatively coupled to the semiconductor device, including;

a base layer,

a first conductor buried in the base layer,

an insulator formed on the base layer,

a second conductor, having first and second branches that are substantially parallel, formed on the second insulator,

a plug, in the base layer, coupled to the first conductor,

a via in the insulator coupling the plug to the second conductor,

an insulator cavity, under the second conductor, in the insulator, and

a support structure, in the insulator cavity, which supports the second conductor above the base layer.

35. A communications system, comprising:

a receiver; and

a transmitter,

wherein at least one of the receiver and the transmitter includes;

a semiconductor device, and

an inductive element, operatively coupled to the semiconductor device, including;

a first insulator on a base layer;

a first conductor on the first insulator;

a second insulator, formed over the first insulator, from a low dielectric inorganic insulator;

a via in the second insulator; and

a second conductor, formed on the second insulator, that is coupled to the first conductor by the via; and

wherein the first and second conductors form substantially parallel branches.

36. A communications system, comprising:

a receiver; and

a transmitter,

wherein both the receiver and the transmitter include;

a semiconductor device, and

an inductive element, operatively coupled to the semiconductor device, including;

a first insulator on a base layer;

a first conductor on the first insulator;

a second insulator, formed over the first insulator, from a low dielectric inorganic insulator;

a via in the second insulator; and

a second conductor, formed on the second insulator, that is coupled to the first conductor by the via; and

wherein the first and second conductors form substantially parallel branches.

37. A communications system, comprising:

a receiver; and

a transmitter,

wherein at least one of the receiver and the transmitter includes;

a semiconductor device, and

an inductive element, operatively coupled to the semiconductor device, including;

a first insulator on a base layer;

a first conductor on the first insulator;

a second insulator, formed over the first insulator, from a low dielectric inorganic insulator;

a via in the second insulator; and

a second conductor, formed on the second insulator, that is coupled to the first conductor by the via; and

wherein the first and second conductors form substantially parallel branches.

38. A communications system, comprising:

a receiver; and

a transmitter,

wherein both the receiver and the transmitter include;

a semiconductor device, and

an inductive element, operatively coupled to the semiconductor device, including;

a first insulator on a base layer;

a first conductor on the first insulator;

a second insulator, formed over the first insulator, from a low dielectric inorganic insulator;

a via in the second insulator; and

a second conductor, formed on the second insulator, that is coupled to the first conductor by the via; and

wherein the first and second conductors form substantially parallel branches.