Method and apparatus for monitoring material removal tool performance using endpoint time removal rate determination
First Claim
1. A method for monitoring the performance of a material removal tool, comprising:
- providing a wafer having at least one process layer formed thereon;
measuring the thickness of the process layer;
removing at least a portion of the process layer in the material removal tool until an endpoint of the removal process is reached;
determining a removal rate based on the measured thickness of the process layer and a duration of the removal process until the endpoint is reached; and
comparing the determined removal rate to an expected removal rate to monitor the performance of the material removal tool.
5 Assignments
0 Petitions
Accused Products
Abstract
A method for monitoring the performance of a material removal tool includes providing a wafer having at least one process layer formed thereon; measuring the thickness of the process layer; removing at least a portion of the process layer in the material removal tool until an endpoint of the removal process is reached; determining a removal rate based on the measured thickness of the process layer and a duration of the removal process until the endpoint is reached; and comparing the determined removal rate to an expected removal rate to monitor the performance of the material removal tool. A processing line includes a metrology tool, a material removal tool, and a process controller. The metrology tool is adapted to measure a thickness of a process layer formed on a wafer. The material removal tool is adapted to remove at least a portion of the process layer until an endpoint is reached. The process controller is adapted to determine a removal rate based on the measured thickness of the process layer and a duration of the removal process until the endpoint is reached and compare the determined removal rate to an expected removal rate to monitor the performance of the material removal tool.
68 Citations
37 Claims
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1. A method for monitoring the performance of a material removal tool, comprising:
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providing a wafer having at least one process layer formed thereon;
measuring the thickness of the process layer;
removing at least a portion of the process layer in the material removal tool until an endpoint of the removal process is reached;
determining a removal rate based on the measured thickness of the process layer and a duration of the removal process until the endpoint is reached; and
comparing the determined removal rate to an expected removal rate to monitor the performance of the material removal tool. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10)
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11. A method for monitoring the performance of a material removal tool adapted to remove at least a portion of a process layer formed on a wafer, comprising:
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storing measured thicknesses of the process layers for a plurality of the wafers;
storing endpoint times for the plurality of wafers processed in the material removal tool;
determining removal rates based on the measured thicknesses and the endpoint times; and
comparing the determined removal rates to an expected removal rate to monitor the performance of the material removal tool. - View Dependent Claims (12, 13, 14, 15, 16, 17, 18)
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19. A processing line, comprising:
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a metrology tool adapted to measure a thickness of a process layer formed on a wafer;
a material removal tool adapted to remove at least a portion of the process layer until an endpoint is reached; and
a process controller adapted to determine a removal rate based on the measured thickness of the process layer and a duration of the removal process until the endpoint is reached and compare the determined removal rate to an expected removal rate to monitor the performance of the material removal tool. - View Dependent Claims (20, 21, 22, 23, 24, 25, 26, 27, 28)
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29. A processing line, comprising:
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means for measuring the thickness of a process layer formed on a wafer;
means for removing at least a portion of the process layer until an endpoint time is reached;
means for determining a removal rate based on the measured thickness of the process layer and the endpoint time; and
means for comparing the determined removal rate to an expected removal rate to monitor the performance of a material removal tool.
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30. A method for monitoring the performance of a material removal tool, comprising:
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providing a wafer having at least one process layer formed thereon;
measuring the thickness of the process layer;
removing at least a portion of the process layer in the material removal tool until an endpoint of the removal process is reached;
measuring the thickness of a remaining portion of the process layer;
determining a removal rate based on the measured thickness of the process layer, the measured thickness of the remaining portion, and a duration of the removal process until the endpoint is reached; and
comparing the determined removal rate to an expected removal rate to monitor the performance of the material removal tool. - View Dependent Claims (31, 32, 33, 34, 35, 36, 37)
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Specification