Wafer on wafer packaging and method of fabrication for full-wafer burn-in and testing
First Claim
1. A method of constructing a wafer-on-wafer semiconductor package comprising:
- providing a semiconductor device wafer having at least one active surface and an opposite surface, the semiconductor device wafer comprising a plurality of unsingulated semiconductor dies having die bond pads exposed on the at least one active surface of the semiconductor device wafer;
providing a support wafer having a die connect surface and a testing/mounting surface of the support wafer;
forming a plurality of vias arranged in a preselected pattern, the plurality of vias extending from the die connect surface of the support wafer to the testing/mounting surface of the support wafer;
disposing a plurality of electrically conductive traces on the die connect surface of the support wafer, the plurality of electrically conductive traces each having a prepositioned die bond pad connect element end and a via end terminating at one of the plurality of vias;
locating and forming a plurality of electrically conductive die bond pad connect elements on the die connect surface of the support wafer, the plurality of electrically conductive die bond pad connect elements each being in electrical communication with selected said die bond pad connect element ends of the electrically conductive traces;
introducing a volume of an electrically conductive material within at least some of the plurality of vias, the volume of the electrically conductive material completing an electrical path between selected said plurality of electrically conductive die bond pad connect elements respectively associated with the at least some of the plurality of vias and terminating in a first meniscus proximate the testing/mounting surface of the support wafer to provide a plurality of test connection/mounting elements; and
attaching the plurality of electrically conductive die bond pad connect elements to the die bond pads to mechanically and electrically connect the semiconductor device wafer to the support wafer to create the wafer-on-wafer semiconductor package.
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Accused Products
Abstract
A semiconductor device wafer-on-support wafer package comprising a plurality of segmentable chip-scale packages and method of constructing, burning-in, and testing same. The wafer-on-wafer package can be burned-in and tested at the wafer level prior to segmenting, or singulating, the wafer-on-wafer package into a plurality of individual chip-scale packages. The device wafer includes a plurality of unsingulated semiconductor dies having a plurality of die bond pads being respectively bonded to a plurality of electrically conductive die bond pad connect elements provided on a first surface of the support wafer. The die bond pad connect elements are in electrical communication with a plurality of respectively associated test connection/mounting elements positioned in a prearranged pattern on the opposite surface of the support wafer. Preferably the die bond pad connect elements and the test connection/mounting elements are placed in electrical communication by way of electrical paths extending through vias, or feed-throughs, provided in the support wafer. Upon burning-in and testing the wafer-on-wafer package, chip-scale packages are singulated from the wafer-on-wafer package and the test connection/mounting elements of the chip-scale package are bonded to respective, corresponding mounting pads, or other suitable surfaces located on circuit boards, memory modules, or other substrates. The wafer-on-wafer package and chip-scale packages of the present invention are particularly well-suited for use in the production of semiconductor chips and packages incorporating ultra large-scale integration (ULSI) technology as well as bonding techniques such as controlled collapse chip connection (C4) techniques.
154 Citations
28 Claims
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1. A method of constructing a wafer-on-wafer semiconductor package comprising:
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providing a semiconductor device wafer having at least one active surface and an opposite surface, the semiconductor device wafer comprising a plurality of unsingulated semiconductor dies having die bond pads exposed on the at least one active surface of the semiconductor device wafer;
providing a support wafer having a die connect surface and a testing/mounting surface of the support wafer;
forming a plurality of vias arranged in a preselected pattern, the plurality of vias extending from the die connect surface of the support wafer to the testing/mounting surface of the support wafer;
disposing a plurality of electrically conductive traces on the die connect surface of the support wafer, the plurality of electrically conductive traces each having a prepositioned die bond pad connect element end and a via end terminating at one of the plurality of vias;
locating and forming a plurality of electrically conductive die bond pad connect elements on the die connect surface of the support wafer, the plurality of electrically conductive die bond pad connect elements each being in electrical communication with selected said die bond pad connect element ends of the electrically conductive traces;
introducing a volume of an electrically conductive material within at least some of the plurality of vias, the volume of the electrically conductive material completing an electrical path between selected said plurality of electrically conductive die bond pad connect elements respectively associated with the at least some of the plurality of vias and terminating in a first meniscus proximate the testing/mounting surface of the support wafer to provide a plurality of test connection/mounting elements; and
attaching the plurality of electrically conductive die bond pad connect elements to the die bond pads to mechanically and electrically connect the semiconductor device wafer to the support wafer to create the wafer-on-wafer semiconductor package. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19, 20, 21, 22, 23, 24, 25, 26, 27, 28)
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Specification