Edge stress reduction by noncoincident layers

• US 6,380,008 B2
• Filed: 12/14/2000
• Issued: 04/30/2002
• Est. Priority Date: 06/16/1997
• Status: Expired due to Term

• Current Assignee: Texas Instruments, Inc.
• Original Assignee: Texas Instruments, Inc.
• Inventors: Richardson, William F., Kwok, Siang Ping, Anderson, Dirk N.
• Primary Examiner(s): Smith, Matthew
• Assistant Examiner(s): Lee, Calvin
• Application Number:
  US09/738,001
• Publication Number:
  US 20010001724A1
• Time in Patent Office: 502 Days
• Field of Search: 438/158, 438/253, 438/396, 438/623, 438/655, 438/656, 438/241, 257/384, 257/344, 257/900, 257/302, 257/787, 257/254, 257/296, 257/630, 257/313-315
• US Class Current: 438/158
• CPC Class Codes: H01L 21/28044 the conductor comprising at least another non-silicon conductive layer
• CPC Class Codes: H01L 21/28114 characterised by the sectional shape, e.g. T, inverted-T
• CPC Class Codes: H01L 29/42376 characterised by the length or the sectional shape
• CPC Class Codes: H01L 29/4941 with a barrier layer between the silicon and the metal or metal silicide upper layer, e.g. Silicide/TiN/Polysilicon

Abstract

The stress at the edges of a thin film conductor can be reduced by noncoincident layered structures, which takes advantage of the characteristic stress polarity changing from tensile to compressive or vice versa in the edge vicinity in order to avoid device reliability and performance problems. By using noncoincident layered structures, destructive stress interference from different layers can be achieved to reduce the stress or stress gradient at the edge. The structures and methods disclosed herein can advantageously be used in many integrated circuit and device manufacturing applications (including gates, wordlines, and bitlines).

Claims

1. A process of fabricating an integrated circuit structure, comprising:

A. forming a plurality of layers of material on a semiconductor substrate, including forming at least a first layer of conductive material above the substrate and forming a second layer of conductive material above the first layer;

B. forming a longitudinal pattern of photoresist material overlying the plurality of layers, the pattern having opposed lateral sides and delineating a lead pattern on the plurality of layers;

C. etching the plurality of layers to form a stack of the plurality of layers below the photoresist pattern, at least the first layer having sidewalls substantially vertically below the sidewalls of the photoresist pattern;

D. laterally etching the sidewalls of the second layer of conductive material in the stack inwardly to leave the sidewalls of the second layer non-coincident with the sidewalls of said first layer of conductive material; and

E. after the lateral etching, the lead width of the second conductive layer being at least 0.8 times the height of the first layer of conductive material, and the lead width of the second conductive layer being within the range of 0.4 to 0.8 times the lead width of the first layer of conductive material in the stack.

2. The process of claim 1, in which said first conductive material consists essentially of tungsten.

3. The process of claim 1, in which said stack has a barrier layer between said first conductive layer and said second conductive layer.

4. The process of claim 3, in which said barrier consists of titanium nitride.

5. The process of claim 3, in which said barrier layer consists of titanium boride.

6. The process of claim 1, in which the stress in the second conductive material is tensile.

7. The process of claim 1, in which the integrated circuit structure further comprises a dielectric layer overlying the second conductive material.

8. The process of claim 1, in which the integrated circuit structure further comprises a third conductive substrate comprising at least fifty percent silicon and in which the stress is compressive.

9. The process of claim 1 in which the etching and laterally etching are combined in one step.

10. The process of claim 1 in which the first layer and the second layer of conductive material have tensile and compressive stresses of opposing signs.

11. The process of claim 1 in which the forming the first layer includes forming of a layer of polysilicon.

12. The process of claim 1 in which the forming the second layer includes forming a layer of refractory metal.

13. The process of claim 1 in which the forming the second layer includes forming of a layer of refractory metal silicide.

14. The process of claim 1 in which the width of the second conductive layer is within the range of 0.45 to 0.6 times the width of the first layer of conductive material.

15. The process of claim 1 in which forming the stack includes forming a lead over the substrate.