Semiconductor device and a method of manufacturing the same
First Claim
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1. A method of manufacturing a semiconductor device comprising the steps of:
- forming a gate wiring over a substrate having an insulating surface;
sequentially forming a gate insulating film, a semiconductor film and a first protective film without exposing them to the air;
irradiating said semiconductor film with a laser light through said first protective film to form a crystalline semiconductor film;
forming a second protective film by patterning said first protective film;
introducing an impurity element to said crystalline semiconductor film while using as a mask said second protective film; and
patterning said crystalline semiconductor film into a semiconductor island to form an active layer.
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Abstract
To provide a technique required for purifying the interface between an active layer and an insulating film. On a substrate (101), a gate wiring (103) is formed and the surface thereof is covered with a gate oxide film (104). Then, a first insulating film (105a), a second insulating film (105b), a semiconductor film (106) and a protective film (107) are sequentially formed and layered without exposing them to the air. Further, the semiconductor film (106) is irradiated with laser light through the protective film (107). In this way, a TFT may be given good characteristics by completely purifying the interface of the semiconductor film.
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Citations
41 Claims
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1. A method of manufacturing a semiconductor device comprising the steps of:
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forming a gate wiring over a substrate having an insulating surface;
sequentially forming a gate insulating film, a semiconductor film and a first protective film without exposing them to the air;
irradiating said semiconductor film with a laser light through said first protective film to form a crystalline semiconductor film;
forming a second protective film by patterning said first protective film;
introducing an impurity element to said crystalline semiconductor film while using as a mask said second protective film; and
patterning said crystalline semiconductor film into a semiconductor island to form an active layer. - View Dependent Claims (2, 3, 4, 35)
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5. A method of manufacturing a semiconductor device comprising the steps of:
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forming a gate wiring over a substrate having an insulating surface;
sequentially forming a gate insulating film, a semiconductor film and a first protective film without exposing them to the air;
irradiating said semiconductor film with ultraviolet light or infrared light through said first protective film to form a crystalline semiconductor film;
forming a second protective film by patterning said first protective film;
introducing an impurity element to said crystalline semiconductor film while using as a mask said second protective film;
patterning said semiconductor film containing crystals into a semiconductor island to form an active layer; and
etching said gate insulating film while using as a mask said active layer. - View Dependent Claims (6, 7, 8, 36)
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9. A method of manufacturing a thin film transistor comprising the steps of:
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forming a gate wiring over a substrate having an insulating surface;
oxidizing said gate wiring to form a gate oxide film on a surface of said gate wiring;
sequentially forming a gate insulating film, a semiconductor film and a first protective film without exposing them to the air;
irradiating said semiconductor film with ultraviolet light or infrared light through said first protective film to form a crystalline semiconductor film;
forming a second protective film by patterning said first protective film;
introducing an impurity element to said crystalline semiconductor film while using as a mask said second protective film; and
patterning said crystalline semiconductor film a semiconductor island to form an active layer. - View Dependent Claims (10, 11, 12, 13, 37)
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14. A method of manufacturing a semiconductor device comprising the steps of:
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forming a gate wiring over a substrate having an insulating surface;
oxidizing said gate wiring to form a gate oxide film on a surface of said gate wiring film;
sequentially forming a gate insulating film, a semiconductor film and a first protective film without exposing them to the air;
irradiating said semiconductor film with ultraviolet light or infrared light through said first protective film to form a crystalline semiconductor film;
forming a second protective film by patterning said first protective film;
introducing an impurity element to said crystalline semiconductor film while using as a mask said second protective film;
patterning said crystalline semiconductor film into a semiconductor island to form an active layer; and
sequentially etching said gate insulating film and said gate oxide film while using as a mask said active layer. - View Dependent Claims (15, 16, 17, 18)
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19. A method of manufacturing a thin film transistor comprising the steps of:
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forming a gate wiring on an insulating surface;
sequentially forming a gate insulating film, a semiconductor film and a first protective film without exposing them to the air;
irradiating said semiconductor film with a laser light through said first protective film to form a crystalline semiconductor film;
forming a second protective film by patterning said first protective film; and
introducing an impurity element to said crystalline semiconductor film to form impurity regions by using said second protective film as a mask. - View Dependent Claims (20, 21, 22, 32, 33, 34, 38)
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23. A method of manufacturing a thin film transistor comprising the steps of:
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forming a gate wiring on an insulating surface;
sequentially forming a gate insulating film, a semiconductor film and a first protective film without exposing them to the air;
irradiating said semiconductor film with a laser light through said first protective film to form a crystalline semiconductor film;
forming a second protective film by patterning said first protective film;
introducing a first impurity element to said crystalline semiconductor film to form first impurity regions by using said second protective film as a mask;
forming a third protective film by patterning said second protective film; and
introducing a second impurity element to said crystalline semiconductor film to form second impurity regions by using said third protective film as the mask. - View Dependent Claims (24, 25, 26, 39)
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27. A method of manufacturing a thin film transistor comprising the steps of:
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forming a gate wiring on an insulating surface;
sequentially forming a gate insulating film, a semiconductor film and a first protective film without exposing them to the air;
irradiating said semiconductor film with an infrared light through said first protective film to form a crystalline semiconductor film;
forming a second protective film by patterning said first protective film; and
introducing an impurity element to said crystalline semiconductor film to form impurity regions by using said second protective film as a mask. - View Dependent Claims (28, 29, 30, 40)
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31. A method of manufacturing a thin film transistor comprising the steps of:
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forming a gate wiring on an insulating surface;
sequentially forming a gate insulating film, a semiconductor film and a first protective film without exposing them to the air;
irradiating said semiconductor film with an infrared light through said first protective film to form a crystalline semiconductor film;
forming a second protective film by patterning said first protective film;
introducing a first impurity element to said crystalline semiconductor film to form first impurity regions by using said second protective film as a mask;
forming a third protective film by patterning said second protective film; and
introducing a second impurity element to said crystalline semiconductor film to form second impurity regions by using said third protective film as the mask. - View Dependent Claims (41)
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Specification