Method of manufacturing a semiconductor device

• US 6,380,046 B1
• Filed: 06/21/1999
• Issued: 04/30/2002
• Est. Priority Date: 06/22/1998
• Status: Expired due to Term

• Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Original Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Inventors: Yamazaki, Shunpei
• Primary Examiner(s): Dang, Trung
• Application Number:
  US09/337,333
• Time in Patent Office: 1,044 Days
• Field of Search: 438/406, 438/408, 438/409, 438/413, 438/149
• US Class Current: 438/409
• CPC Class Codes: H01L 21/76254 with separation/delamination along an ion implanted layer, e.g. Smart-cut, Unibond
• CPC Class Codes: H01L 21/76259 with separation/delamination along a porous layer
• CPC Class Codes: H01L 27/1214 comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
• CPC Class Codes: H01L 27/1266 the substrate on which the devices are formed not being the final device substrate, e.g. using a temporary substrate
• CPC Class Codes: H01L 29/66772 Monocristalline silicon transistors on insulating substrates, e.g. quartz substrates H01L29/66666 takes precedence; thin film FinFETs H01L29/66795
• CPC Class Codes: H01L 29/78606 with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device H01L29/78642, H01L29/78645 take precedence
• CPC Class Codes: H01L 29/78621 with LDD structure or an extension or an offset region or characterised by the doping profile
• CPC Class Codes: H01L 29/78654 Monocrystalline silicon transistors

Abstract

There is provided a method of removing trap levels and defects, which are caused by stress, from a single crystal silicon thin film formed by an SOI technique. First, a single crystal silicon film is formed by using a typical bonding SOI technique such as Smart-Cut or ELTRAN. Next, the single crystal silicon thin film is patterned to form an island-like silicon layer, and then, a thermal oxidation treatment is carried out in an oxidizing atmosphere containing a halogen element, so that an island-like silicon layer in which the trap levels and the defects are removed is obtained.

Claims

1. A method of manufacturing a semiconductor device, said method comprising the steps of:

forming a porous silicon layer by anodic oxidation of a first single crystal silicon substrate;

proceeding an epitaxial growth of a single crystal silicon film on the porous silicon layer;

forming a silicon oxide film on the single crystal silicon film;

bonding the first single crystal silicon substrate to a second substrate through the silicon oxide film, said second substrate being as a support;

carrying out a first heat treatment to the first single crystal silicon substrate and the second substrate;

polishing the first single crystal silicon substrate until the porous silicon layer is exposed;

exposing the single crystal silicon film by removing the porous silicon layer;

forming a silicon island by patterning the single crystal silicon film; and

thermally oxidizing the silicon island at a temperature in a range of from 1050 to 1150°

C.

3. A method according to claim 1, wherein the thermally oxidizing step is carried out in an oxidizing atmosphere comprising a halogen element.

5. A method according to claim 1, wherein said semiconductor device is one selected from the group consisting of a D/A converter, a γ

correction circuit, and a signal dividing circuit.

6. A method according to claim 1, wherein said semiconductor device is one selected from the group consisting of a liquid crystal display device, an EL (electroluminescence) display device and an EC (electrochromic) display device.

7. A method according to claim 1, wherein said semiconductor device is a microprocessor.

8. A method according to claim 1, wherein said semiconductor device is a computer for controlling a vehicle such as car or an electric train.

9. A method according to claim 1, wherein said semiconductor device is one selected from the group consisting of a video camera, a digital camera, a projector (rear type or front type), a head mount display (a goggle type display), a car navigation system, a personal computer, a portable information terminal such as a mobile computer, a portable telephone, or an electric book.

11. A method according to claim 3, wherein said semiconductor device is one selected from the group consisting of a liquid crystal display device, an EL (electroluminescence) display device and an EC (electrochromic) display device.

15. A method according to claim 3, wherein the oxidizing atmosphere comprises a mixture gas of oxygen and hydrogen chloride (HCI) or a mixture gas of oxygen and nitrogen trifluoride (NF₃).

16. A method according to claim 1, further comprising forming a thin film transistor by the following steps of:

forming a gate insulating film on the silicon island;

forming a gate electrode over the silicon island with the gate insulating film interposed therebetween; and

introducing an impurity into the silicon island to form at least a source region, a drain region and a channel region between the source and drain regions.

2. A method of manufacturing a semiconductor device, said method comprising the steps of:

forming a porous silicon layer by anodic oxidation of a first single crystal silicon substrate;

proceeding an epitaxial growth of a single crystal silicon film on the porous silicon layer;

forming a silicon oxide film on the single crystal silicon film;

bonding the first single crystal silicon substrate to a second substrate through the silicon oxide film, said second substrate being as a support;

polishing the first single crystal silicon substrate until the porous silicon layer is exposed;

exposing the single crystal silicon film by removing the porous silicon layer;

forming a silicon island by patterning the single crystal silicon film; and

thermally oxidizing the silicon island at a temperature in a range of from 1050 to 1150°

C.

4. A method according to claim 2, wherein the thermally oxidizing step is carried out in an oxidizing atmosphere comprising a halogen element.

10. A method according to claim 2, wherein said semiconductor device is one selected from the group consisting of a D/A converter, a γ

correction circuit, and a signal dividing circuit.

12. A method according to claim 2, wherein said semiconductor device is a microprocessor.

13. A method according to claim 2, wherein said semiconductor device is a computer for controlling a vehicle such as car or an electric train.

14. A method according to claim 2, wherein said semiconductor device is one selected from the group consisting of a video camera, a digital camera, a projector (rear type or front type), a head mount display (a goggle type display), a car navigation system, a personal computer, a portable information terminal such as a mobile computer, a portable telephone, or an electric book.

17. A method according to claim 4, wherein the oxidizing atmosphere comprises a mixture gas of oxygen and hydrogen chloride (HCI) or a mixture gas of oxygen and nitrogen trifluoride (NF₃).

18. A method according to claim 2, further comprising forming a thin film transistor by the following steps of:

forming a gate insulating film on the silicon island;

forming a gate electrode over the silicon island with the gate insulting film interposed therebetween; and

introducing an impurity into the silicon island to form at least a source region, a drain region and a channel region between the source and drain regions.