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Method of manufacturing a semiconductor device

  • US 6,380,046 B1
  • Filed: 06/21/1999
  • Issued: 04/30/2002
  • Est. Priority Date: 06/22/1998
  • Status: Expired due to Term
First Claim
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1. A method of manufacturing a semiconductor device, said method comprising the steps of:

  • forming a porous silicon layer by anodic oxidation of a first single crystal silicon substrate;

    proceeding an epitaxial growth of a single crystal silicon film on the porous silicon layer;

    forming a silicon oxide film on the single crystal silicon film;

    bonding the first single crystal silicon substrate to a second substrate through the silicon oxide film, said second substrate being as a support;

    carrying out a first heat treatment to the first single crystal silicon substrate and the second substrate;

    polishing the first single crystal silicon substrate until the porous silicon layer is exposed;

    exposing the single crystal silicon film by removing the porous silicon layer;

    forming a silicon island by patterning the single crystal silicon film; and

    thermally oxidizing the silicon island at a temperature in a range of from 1050 to 1150°

    C.

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