Methods for preparing ruthenium metal films

• US 6,380,080 B2
• Filed: 03/08/2000
• Issued: 04/30/2002
• Est. Priority Date: 03/08/2000
• Status: Expired due to Term

• Current Assignee: Micron Technology, Inc.
• Original Assignee: Micron Technology, Inc.
• Inventors: Visokay, Mark R.
• Primary Examiner(s): Ghyka, Alexander G.
• Application Number:
  US09/520,492
• Publication Number:
  US 20020013052A1
• Time in Patent Office: 783 Days
• Field of Search: 438/681, 438/686, 438/758, 438/778, 427/99, 427/252, 427/255.28, 427/576, 427/584
• US Class Current: 438/681
• CPC Class Codes: C23C 16/16 from metal carbonyl compounds
• CPC Class Codes: C23C 16/18 from metallo-organic compounds
• CPC Class Codes: C23C 16/40 Oxides

Abstract

The present invention provides methods for the preparation of ruthenium metal films from liquid ruthenium complexes of the formula (diene)Ru(CO)₃, wherein “diene” refers to linear, branched, or cyclic dienes, bicyclic dienes, tricyclic dienes, fluorinated derivatives thereof, combinations thereof, or derivatives thereof additionally containing heteroatoms such as halide, Si, S, Se, P, As, N, or O, in the presence of an oxidizing gas.

Claims

1. A method of manufacturing a semiconductor structure, the method comprising:

providing a semiconductor substrate or substrate assembly;

providing a liquid precursor composition comprising one or more compounds of the formula (Formula

     1);

2. The method of claim 1 wherein the substrate or substrate assembly is contained within a reaction chamber having a pressure of about 10⁻

3 torr to about 1 atmosphere.

3. The method of claim 2 wherein the substrate or substrate assembly is contained within a reaction chamber having a pressure of about 0.1 torr to about 10 torr.

4. The method of claim 1 wherein the substrate or substrate assembly is contained within a reaction chamber having a pressure of about 0.1 torr to about 10 torr.

5. The method of claim 1 wherein the step of vaporizing the liquid precursor comprises using a technique selected from the group of flash vaporization, bubbling, microdroplet formation, and combinations thereof.

6. The method of claim 1 wherein the semiconductor substrate or substrate assembly comprises a silicon wafer.

7. The method of claim 1 wherein the precursor composition is vaporized in the presence of at least one inert gas.

8. The method of claim 1 wherein the oxidizing gas is selected from the group of N₂O, NO, CO, CO₂, H₂O₂, H₂O, and combinations thereof.

9. The method of claim 8 wherein the oxidizing gas is selected from the group of N₂O, CO, CO₂, H₂O, and combinations thereof.

10. The method of claim 9 wherein the oxidizing gas is N₂O.

11. The method of claim 1 wherein the liquid precursor composition comprises an organic solvent.

12. A method of manufacturing a semiconductor structure, the method comprising:

providing a semiconductor substrate or substrate assembly, which is at a temperature of about 130°

C. to about 300°

C., contained within a reaction chamber having a pressure of about 10<sup>−

3</sup> torr to about 1 atmosphere;

providing a liquid precursor composition at a temperature of about 20°

C. to about 50°

C., the precursor composition comprising one or more compounds of the formula (Formula I);

13. A method of manufacturing a semiconductor structure, the method comprising:

providing a semiconductor substrate or substrate assembly;

providing a liquid precursor composition comprising one or more compounds of the formula (Formula I);

 

(diene)Ru(CO)₃

 

wherein “

diene”

refers to linear, branched, or cyclic dienes, bicyclic dienes, tricyclic dienes, fluorinated derivatives thereof, derivatives thereof additionally containing heteroatoms such as halide, Si, S, Se, P, As, N, or O, or combinations thereof;

vaporizing the liquid precursor composition to form vaporized precursor composition;

directing the vaporized precursor composition in combination with at least one oxidizing gas less oxidizing than O₂ toward the semiconductor substrate or substrate assembly to form a ruthenium metal film on a surface of the semiconductor substrate or substrate assembly; and

annealing the ruthenium metal film.

14. The method of claim 13 wherein the annealing step is carried out at a temperature of about 300°

C. to about 1000°

C.

15. A method of manufacturing a semiconductor structure, the method comprising:

providing a semiconductor substrate or substrate assembly comprising a surface having one or more small high aspect ratio features;

providing a liquid precursor composition comprising one or more compounds of the formula (Formula I);

16. A method of forming a ruthenium metal film on a substrate, the method comprising:

providing a substrate;

providing a liquid precursor composition comprising one or more compounds of the formula (Formula I);

17. A method of manufacturing a semiconductor structure, the method comprising:

providing a semiconductor substrate or substrate assembly comprising a surface having one or more small high aspect ratio features, which is at a temperature of about 150°

C. to about 350°

C., wherein the semiconductor substrate or substrate assembly is contained within a reaction chamber having a pressure of about 10<sup>−

3</sup> torr to about 1 atmosphere;

providing a liquid precursor composition at a temperature of about 20°

C. to about 50°

C., the precursor composition comprising one or more compounds of the formula (Formula I);

18. A method of manufacturing a semiconductor structure, the method comprising:

providing a semiconductor substrate or substrate assembly;

providing a liquid precursor composition comprising one or more compounds of the formula (Formula I);

19. A method of forming a ruthenium metal film on a substrate, the method comprising:

providing a substrate;

providing a liquid precursor composition comprising one or more compounds of the formula (Formula I);