Optical function device with photonic band gap and/or filtering characteristics

• US 6,380,551 B2
• Filed: 04/26/1999
• Issued: 04/30/2002
• Est. Priority Date: 05/01/1998
• Status: Expired due to Term

• Current Assignee: Shin-Etsu Handotai Co., Ltd. (Shin-Etsu Chemical Company Limited)
• Original Assignee: Shin-Etsu Handotai Co., Ltd. (Shin-Etsu Chemical Company Limited)
• Inventors: Abe, Takao, Aga, Hiroji
• Primary Examiner(s): Tran, Minh Loan
• Application Number:
  US09/299,074
• Publication Number:
  US 20010032977A1
• Time in Patent Office: 1,100 Days
• Field of Search: 257/14, 257/15, 257/17, 257/18, 257/21, 257/22
• US Class Current: 257/15
• CPC Class Codes: B82Y 20/00 Nanooptics, e.g. quantum optics or photonic crystals
• CPC Class Codes: G02B 6/12 of the integrated circuit kind electric integrated circuits H01L27/00
• CPC Class Codes: G02B 6/1225 comprising photonic band-gap structures or photonic lattices

Abstract

A stacked material free from a degraded quality of crystal, formed with a precise periodicity, and fabricated without relying on the vapor phase growth method is provided. An optical function device using the stacked material is also provided. A starting stacked material composed of two alternate layers (A), (B) having different refractive indexes is stacked over two periods or more by a substrate bonding method to provide a multi-periodic stacked structure.

Claims

1. A stacked material comprising a multi-periodic stacked structure fabricated by stacking two alternate homogeneous layers (A), (B) of material having different refractive indexes, the stacked structure being stacked over two or more periods, wherein at least one layer in said multi-periodic stacked structure has a periodicity of different refractive indexes, said at least one layer having a periodicity including a non-periodic portion.

2. A stacked material according to claim 1 wherein said multi-periodic stacked structure is stacked on a substrate (C).

3. A stacked material according to claim 2, wherein said layer (A) is a silicon oxide film, said layer (B) is a silicon layer, and said substrate (C) is a silicon substrate.

4. A stacked material according to claim 2, wherein said layer (A) is a silicon layer, said layer (B) is a silicon oxide film, and said substrate (C) is a quartz substrate.

5. A stacked material according to claim 4, wherein said layer (A) is a compound semiconductor layer, said layer (B) is a silicon oxide film, and said substrate (C) is a quartz substrate.

6. A stacked material according to claim 2, wherein said layer (A) is a silicon nitride film said layer (B) is a silicon layer, and said substrate (C) is a silicon substrate.

7. A stacked material according to claim 6, wherein said layer (A) is a silicon nitride film, said layer (B) is a compound semiconductor layer and substrate (C) is a silicon substrate.

8. A stacked material according to claim 2, wherein said layer (A) is a silicon layer, said layer (B) is a silicon nitride film, and said substrate (C) is a quartz substrate.

9. A stacked material according to claim 8, wherein said layer (A) a compound semiconductor layer, said layer (B) is a silicon nitride film and said substrate (C) is a quartz substrate.

10. A stacked material according to claim 2, wherein said layer (A) is a silicon oxide film, said layer (B) is a compound semiconductor layer, and said substrate (C) is a silicon substrate.

11. A stacked material according to claim 1, wherein said multi-periodic stacked structure includes a non-periodic structure portion.

12. A stacked material according to claim 11, wherein said non-periodic portion is provided with a light emitting ability.

13. A stacked material according to claim 12, wherein said light emitting ability is realized by doping said at least one layer with a rare metal element.

14. An optical function device having a light emitting ability fabricated by using a stacked material according to claim 12.

15. A stacked material according to claim 11, wherein said stacked material has a filtering characteristic in a thickness direction.

16. A stacked material according to claim 1, wherein said layer (A) is a silicon oxide film and said layer (B) is a silicon layer.

17. A stacked material according to claim 1, wherein said layer (A) is a silicon layer and said layer (B) is a silicon oxide film.

18. A stacked material according to claim 1, wherein said layer (A) is a silicon nitride film and said layer (B) is a silicon layer.

19. A stacked material according to claim 1, wherein said layer (A) is a silicon layer and said layer (B) is a silicon nitride film.

20. A stacked material according to claim 1, wherein said layer (A) is a silicon oxide film and said layer (B) is a compound semiconductor layer.

21. A stacked material according to claim 1, wherein said layer (A) is a compound semiconductor layer and said layer (B) is a silicon oxide film.

22. A stacked material according to claim 1, wherein said layer (A) is a silicon nitride and said layer (B) is a compound semiconductor layer.

23. A stacked material according to claim 1, wherein said layer (A) is a compound semiconductor layer and said layer (B) is a nitride film.

24. A stacked material according to claim 1, wherein said stacked material has a photonic band gap characteristic in a thickness direction.

25. An optical function device fabricated by using a stacked material according to claim 24.

26. An optical function device according to claim 25, wherein said optical function device is a waveguide, an optical communication modulator or a light detector.

27. A stacked material according to claim 1, wherein said stacked material has a three-dimensional photonic band gap characteristic.

28. A stacked material according to claim 1, wherein said stacked material has a three-dimensional filtering characteristic.

29. A stacked material comprising a multi-periodic stacked structure fabricated by stacking two alternate homogeneous layers (A), (B) of material having different refractive indexes, the stacked structure being stacked over two or more periods, wherein at least one layer in said multi-periodic stacked structure has a periodicity of different refractive indexes and a periodic structure in said at least one layer is formed of a sequence of holes.

30. A stacked material according to claim 29, wherein said sequence of holes in said periodic structure includes a non-periodic portion.

31. A stacked material comprising a multi-periodic stacked structure fabricated by stacking two alternate homogeneous layers (A), (B) of material having different refractive indexes, the stacked structure being stacked over two or more periods, wherein said multi-periodic stacked structure includes a non-periodic structure portion, provided with a light-emitting ability being realized by doping at least one layer with a rare metal element.

32. A stacked material according to claim 31, wherein said rare metal element is erbium.