Low resistance barrier layer for isolating, adhering, and passivating copper metal in semiconductor fabrication
First Claim
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1. A semiconductor device having copper metallizations isolated from a substrate consisting essentially of:
- a substrate; and
a barrier layer system, deposited on the substrate, having a cubic or metastable cubic crystal texture and comprising a plurality of alternating layers of a refractory metal carbide and copper, the layers of refractory metal carbide having a thickness that promotes cubic crystal texture in the copper layers, and a top copper layer deposited on the barrier layer system, the thickness of the top copper layer being greater than an underlying copper layer.
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Abstract
Cubic or metastable cubic refractory metal carbides act as barrier layers to isolate, adhere, and passivate copper in semiconductor fabrication. One or more barrier layers of the metal carbide are deposited in conjunction with copper metallizations to form a multilayer characterized by a cubic crystal structure with a strong (100) texture. Suitable barrier layer materials include refractory transition metal carbides such as vanadium carbide (VC), niobium carbide (NbC), tantalum carbide (TaC), chromium carbide (Cr3C2), tungsten carbide (WC), and molybdenum carbide (MoC).
77 Citations
11 Claims
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1. A semiconductor device having copper metallizations isolated from a substrate consisting essentially of:
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a substrate; and
a barrier layer system, deposited on the substrate, having a cubic or metastable cubic crystal texture and comprising a plurality of alternating layers of a refractory metal carbide and copper, the layers of refractory metal carbide having a thickness that promotes cubic crystal texture in the copper layers, and a top copper layer deposited on the barrier layer system, the thickness of the top copper layer being greater than an underlying copper layer. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11)
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Specification