Magnetic element, magnetic read head, magnetic storage device, magnetic memory device

• US 6,381,171 B1
• Filed: 05/17/2000
• Issued: 04/30/2002
• Est. Priority Date: 05/19/1999
• Status: Expired due to Term

• Current Assignee: Toshiba Memory Corporation (Kioxia Corporation)
• Original Assignee: Kabushiki Kaisha Toshiba (Toshiba Corporation)
• Inventors: Inomata, Koichiro, Nakajima, Kentaro, Saito, Yoshiaki
• Primary Examiner(s): Lebentritt, Michael S.
• Assistant Examiner(s): PHUNG, ANH K
• Application Number:
  US09/572,623
• Time in Patent Office: 713 Days
• Field of Search: 365/173, 365/171, 365/158, 257/421, 257/427
• US Class Current: 365/173
• CPC Class Codes: G11C 11/15 using multiple magnetic layers G11C11/155 takes precedence
• CPC Class Codes: H10N 50/10 Magnetoresistive devices

Abstract

The present invention provides a spin-dependent tunneling effect element expectable to offer the spin accumulation effect at room temperature while also providing a data storage or “memory” element and magnetic reading head each using the tunnel effect element A first concept of the present invention lies in provision of a magnetic element characterized by comprising first and second ferromagnetic layers 1, 5 and a layer of semiconductor particles 3 neighboring the first ferromagnetic layer 1 with a first tunnel barrier 2 disposed between them and also neighboring the second ferromagnetic layer 5 with a second tunnel barrier 4 laid therebetween. A magnetic memory device is also provided which comprises a plurality of memory cells each including a spin-dependent tunneling effect element having a first ferromagnetic electrode, a second ferromagnetic electrode, and a gate electrode as inserted between the first and second ferromagnetic electrodes through first and second ferromagnetic layers; data lines connected in common to the first or second ferromagnetic electrode of multiple spin-dependent tunneling effect elements; and a plurality of word lines capacitance-coupled to the gate electrodes of different memory cells respectively, characterized in that cell selection of selecting one from among multiple memory cells as commonly connected to a data line during reading information stored therein is performed by letting one of the word lines change in potential and then changing the resistance value of a memory cell capacitance-coupled to such selected word line.

Claims

1. A magnetic element comprising:

first and second ferromagnetic layers; and

a layer having semiconductor particles, disposed adjacent to the first ferromagnetic layer with a first tunnel barrier therebetween, and disposed adjacent to the second ferromagnetic layer with a second tunnel barrier therebetween, the first and second tunnel barriers have respective conductance different from each other.

2. The magnetic element of claim 1, wherein the semiconductor particles have longer electron spin relaxation time than electron tunnel time of the first and second tunnel barriers.

3. The magnetic element of claim 1, wherein the semiconductor particles have small average size enough to permit creation of single electron charging effect.

4. The magnetic element of claim 1, further comprising an electrode disposed adjacent to the layer having the semiconductor particles with a dielectric layer disposed therebetween.

5. The magnetic element of claim 1, wherein the first and second tunnel barriers are different from each other in an average film thickness or material.

6. The magnetic element of claim 1, wherein said semiconductor particles comprise ferromagnetic semiconductor particles.

7. A magnetic element comprising:

a ferromagnetic layer;

a nonmagnetic layer; and

a layer having ferromagnetic semiconductor particles, disposed adjacent to the ferromagnetic layer with a first tunnel barrier therebetween, and disposed adjacent to the nonmagnetic layer with a second tunnel barrier therebetween, the first and second tunnel barriers have respective conductance different from each other.

8. The magnetic element of claim 7, wherein the ferromagnetic semiconductor particles have longer average electron spin relaxation time than the electron tunnel time of the first and second tunnel barriers.

9. The magnetic element of claim 7, wherein the ferromagnetic semiconductor particles have small average size enough to permit creation of the single electron charging.

10. The magnetic element of claim 7, further comprising an electrode disposed adjacent to the layer having the ferromagnetic semiconductor particles with a dielectric layer disposed therebetween.

11. The magnetic element of claim 7, wherein the first and second tunnel barriers are different from each other in film thickness or material.

12. A magnetic memory device comprising:

an array of magnetic storage cells;

each cell including first and second ferromagnetic layers, and a layer having semiconductor particles, disposed adjacent to the first ferromagnetic layer with a first tunnel barrier disposed therebetween, and disposed adjacent to the second ferromagnetic layer with a second tunnel barrier disposed therebetween, the first and second tunnel barriers have respective conductance different from each other.

13. The magnetic memory device of claim 12, wherein the semiconductor particles have longer electron spin relaxation time than electron tunnel time of the first and second tunnel barriers.

14. The magnetic memory device of claim 12, wherein the semiconductor particles have small average size enough to permit creation of a single electron charge effect.

15. The magnetic memory device of claim 12, further comprising an electrode disposed adjacent to the layer having the semiconductor particles with a dielectric layer disposed therebetween.

16. The magnetic memory device of claim 12, wherein the first and second tunnel barriers are different from each other in an average film thickness or material.

17. The magnetic memory device of claim 12, wherein said semiconductor particles comprise ferromagnetic semiconductor particles.

22. The magnetic memory device of claim 12, wherein the first and second tunnel barriers are different from each other in film thickness or material.

18. A magnetic memory device comprising:

an array of magnetic storage cells;

each cell including a ferromagnetic layer, a nonmagnetic layer, and a layer having ferromagnetic semiconductor particles, the layer having ferromagnetic semiconductor particles disposed adjacent to the ferromagnetic layer with a first tunnel barrier therebetween and to the nonmagnetic layer with a second tunnel barrier therebetween, the first and second tunnel barriers have respective conductance different from each other.

19. The magnetic memory device of claim 18, wherein the ferromagnetic semiconductor particles have longer average electron spin relaxation time than the electron tunnel time of the first and second tunnel barriers.

20. The magnetic memory device of claim 18, wherein the ferromagnetic semiconductor particles have small average size enough to permit creation of the single electron charging.

21. The magnetic memory device of claim 18, further comprising an electrode disposed adjacent to the layer having the ferromagnetic semiconductor particles with a dielectric layer disposed therebetween.

23. A magnetic read head comprising:

first and second ferromagnetic layers; and

alayer having semiconductor particles, disposed adjacent to the first ferromagnetic layer with a first tunnel barrier therebetween, and disposed adjacent to the second ferromagnetic layer with a second tunnel barrier therebetween, the first and second tunnel barriers have respective conductance different from each other.

24. The magnetic read head of claim 23, wherein said semiconductor particles comprise ferromagnetic semiconductor particles.

25. A magnetic read head comprising:

a ferromagnetic layer;

a nonmagnetic layer; and

a layer having ferromagnetic semiconductor particles, disposed adjacent to the ferromagnetic layer with a first tunnel barrier therebetween, and disposed adjacent to the nonmagnetic layer with a second tunnel barrier therebetween, the first and second tunnel barriers have respective conductance different from each other.

26. A magnetic storage device comprising:

a magnetic reading head including first and second ferromagnetic layers, and a layer having semiconductor particles, the layer having the semiconductor particles disposed adjacent to the first ferromagnetic layer with a first tunnel barrier therebetween and to the second ferromagnetic layer with a second tunnel barrier therebetween, the first and second tunnel barriers have respective conductance different from each other.

27. The magnetic storage device of claim 26, wherein said semiconductor particles comprise ferromagnetic semiconductor particles.

28. A magnetic storage device comprising:

a magnetic reading head including a ferromagnetic layer, a nonmagnetic layer, and a layer having ferromagnetic semiconductor particles, the layer having the ferromagnetic semiconductor particles disposed adjacent to the ferromagnetic layer with a first tunnel barrier therebetween and to the nonmagnetic layer with a second tunnel barrier therebetween, the first and second tunnel barriers have respective conductance different from each other.

29. A magnetic memory device comprising:

a plurality of memory cells including spin-dependent tunneling effect elements, each of the spin-dependent tunneling effect elements having a first ferromagnetic layer, a second ferromagnetic layer, and a gate electrode inserted between the first and second ferromagnetic layers with first and second dielectric layers disposed between the layers and the gate electrode;

a data line connected in common to the first or second ferromagnetic layers of the spin-dependent tunneling effect elements; and

a plurality of word lines capacitance-coupled to the gate electrodes of the memory cells different from one another,

wherein cell selection of selecting one from among the plurality of memory cells as commonly connected to the data line during reading stored data therein is performed by selecting one of the word lines to cause the selected word line to change in voltage, and then letting more than one memory cell capacitance-coupled to the selected word line change in electrical resistance value.

30. The magnetic memory device of claim 29, wherein the word lines cross over the data line.

31. The magnetic memory device of claim 29, wherein the first ferromagnetic layer, the first dielectric layer, the gate electrode, the second dielectric layer, and the second ferromagnetic layer are laminated in this order of sequence, the second dielectric layer includes a first region with the second ferromagnetic layer formed therein and a second region with the second ferromagnetic layer being absent therein, and the word line is laid out along the second region of the plurality of memory cells.

32. The magnetic memory device of claim 29, wherein the spin-dependent tunnel effect element exhibits two different tunnel resistance values through voltage change of the word line, the values defining a ratio of at least one thousand times.

33. The magnetic memory device of claim 29, wherein the gate electrode is a granular magnetic film having ferromagnetic fine particles with coercivity as dispersed within a dielectric matrix.

34. The magnetic memory device of claim 29, wherein the gate electrode is a granular film having nonmagnetic particles or semiconductor particles, the nonmagnetic particles or the semiconductor particles are dispersed in a dielectric matrix, and an electron spin relaxation time of the nonmagnetic particles or the semiconductor particles is longer than an electron tunnel time of the first and second tunnel barriers.

35. The magnetic memory device of claim 29, wherein the gate electrode contains metallic or semiconductor particles with a quantum resonance energy level.