Endpoint detection method and apparatus which utilize a chelating agent to detect a polishing endpoint

• US 6,383,332 B1
• Filed: 05/31/2000
• Issued: 05/07/2002
• Est. Priority Date: 12/15/1998
• Status: Expired due to Term

• Current Assignee: Bell Semiconductor, LLC (Hilco Inc. (d/b/a Hilco Global))
• Original Assignee: LSI Logic Corporation (Broadcom, Inc.)
• Inventors: Miller, Gayle W., Shelton, Gail D.
• Primary Examiner(s): Mills, Gregory
• Assistant Examiner(s): MACARTHUR, SYLVIA
• Application Number:
  US09/583,434
• Time in Patent Office: 706 Days
• Field of Search: 451/66, 451/39, 451/259, 451/282, 513/06, 216/84, 216/88, 216/89, 216/90, 216/93, 216/95, 156/345
• US Class Current: 451/8
• CPC Class Codes: B24B 37/04 designed for working plane surfaces
• CPC Class Codes: B24B 49/04 involving measurement of the workpiece at the place of grinding during grinding operation
• CPC Class Codes: H01L 21/31053 involving a dielectric removal step

Abstract

A method of planarizing a semiconductor wafer having a polishing endpoint layer that includes a ligand is disclosed. One step of the method includes polishing a first side of the wafer in order to remove the ligand from the wafer. Another step of the method includes determining that a chelating agent has bound the ligand due to the polishing step removing the ligand of the polishing endpoint layer. The method also includes the step of terminating the polishing step in response to determining that the chelating agent has bound the ligand. A polishing system is also disclosed which detects a polishing endpoint based upon a chelating agent binding a ligand of a polishing endpoint layer of a semiconductor device.

Claims

1. An apparatus for polishing a semiconductor wafer down to a ligand of said wafer, said wafer having a first side and a second side, comprising:

a polishing platen having a polishing surface;

a wafer carrier configured to (i) engage said wafer by said second side of said wafer and (ii) press said first side of said wafer against said polishing surface of said polishing platen;

a slurry supply system configured to apply a chemical slurry to said first side of said wafer which (i) facilities removal of said ligand from said wafer, and (ii) receives said ligand removed from said wafer, wherein said polishing platen and said wafer carrier are configured to rub said first side of said wafer against said polishing surface in the presence of said chemical slurry in order to remove said ligand from said wafer; and

a polishing endpoint detector that is operable to (i) detect whether a chelating agent has bound said ligand due to said polishing platen removing said ligand from said wafer, and (ii) cause said polishing of said wafer to terminate in response to detecting said chelating agent has bound said ligand.

2. The apparatus of claim 1, wherein said polishing endpoint detector comprises:

a slurry extractor that is operable to extract said chemical slurry from said polishing platen.

3. The apparatus of claim 2, further comprising:

a number of filters which are configured to serially filter said chemical slurry extracted from said polishing platen.

4. The apparatus of claim 2, further comprising:

a spectrophotometer which is operable to determine whether said chelating agent has bound said ligand.

5. The apparatus of claim 4, wherein:

said spectrophotometer detects a color change in a solution which contains said ligand and said chelating agent.

6. The apparatus of claim 5, wherein:

said chelating agent is 5-[p-(dimethylamino)benzylidene]rhodanine, and

said ligand is selected from a group of ions comprising platinum ions, silver ions, mercury ions, and palladium ions.

7. The apparatus of claim 1, further comprising:

a wash reagent supply system which is operable to add a wash reagent to a solution containing said ligand and said chelating agent such that a complex of said ligand and said chelating agent disassociates.