Process for depositing a tungsten-based and/or molybdenum-based layer on a rigid substrate, and substrate thus coated

• US 6,383,566 B1
• Filed: 06/30/2000
• Issued: 05/07/2002
• Est. Priority Date: 06/30/1999
• Status: Expired due to Fees

• Current Assignee: Saint-Gobain Vitrage
• Original Assignee: Saint-Gobain Vitrage
• Inventors: Zagdoun, Georges
• Primary Examiner(s): Jones, Deborah
• Assistant Examiner(s): Piziali, Andrew T
• Application Number:
  US09/609,157
• Time in Patent Office: 676 Days
• Field of Search: 428/1.62, 428/630, 428/632, 428/673, 428/663, 428/665, 427/255.11, 427/255.15, 427/255.19, 65/601, 65/602, 65/604, 65/605.3
• US Class Current: 427/255.15
• CPC Class Codes: C03C 17/09 by deposition from the vapour phase
• CPC Class Codes: C03C 17/36 at least one coating being a metal
• CPC Class Codes: C03C 17/3615 Coatings of the type glass/metal/other inorganic layers, at least one layer being non-metallic
• CPC Class Codes: C03C 17/3618 Coatings of type glass/inorganic compound/other inorganic layers, at least one layer being metallic
• CPC Class Codes: C03C 17/3663 specially adapted for use as mirrors
• CPC Class Codes: C03C 17/3671 specially adapted for use as electrodes
• CPC Class Codes: C03C 17/3673 specially adapted for use in heating devices for rear window of vehicles
• CPC Class Codes: C03C 2217/26 Cr, Mo, W
• CPC Class Codes: Y10T 428/12049 Nonmetal component
• CPC Class Codes: Y10T 428/12771 Transition metal-base component
• CPC Class Codes: Y10T 428/12806 Refractory [Group IVB, VB, or VIB] metal-base component
• CPC Class Codes: Y10T 428/12819 Group VB metal-base component
• CPC Class Codes: Y10T 428/12826 Group VIB metal-base component
• CPC Class Codes: Y10T 428/1284 W-base component
• CPC Class Codes: Y10T 428/12847 Cr-base component
• CPC Class Codes: Y10T 428/12861 Group VIII or IB metal-base component
• CPC Class Codes: Y10T 428/12896 Ag-base component
• CPC Class Codes: Y10T 428/12903 Cu-base component
• CPC Class Codes: Y10T 428/12944 Ni-base component
• CPC Class Codes: Y10T 428/24975 No layer or component greater than 5 mils thick
• CPC Class Codes: Y10T 428/265 : 1 mil or less

Abstract

The present invention is directed to a process for depositing at least one layer (3) based on tungsten and/or on molybdenum by chemical vapor deposition on a non-conductive substrate (1), such as glass, ceramic, glass-ceramic, or polymer, which includes providing at least one tungsten- and/or molybdenum-containing precursor in the form of a metal halide and/or of an organometallic compound, and at least one reducing agent, such as hydrogen or silane, to form the at least one metal layer. The present invention also relates to the substrate obtained by the preceding process and its applications, especially for producing a glazing, mirrors, or emissive screens.

Claims

1. A process for depositing at least one metal layer based on tungsten or molybdenum directly on a non-conductive substrate, which comprises providing at least one tungsten- or molybdenum-containing precursor in the form of a metal halide or an organometallic compound and at least one reducing agent and forming the at least one metal layer from the tungsten- or molybdenum-containing precursor and at least one reducing agent by chemical vapor deposition.

2. The process according to claim 1, wherein the at least one metal layer is provided on a ribbon of glass on a float line.

3. The process according to claim 1, which further comprises at least partially covering the at least one metal layer by depositing thereupon a second metal or metal alloy layer that contains a metal other than tungsten or molybdenum.

4. The process according to claim 3, which further comprises at least partially covering the second metal layer with a metal protective layer containing at least one metal chosen from the group consisting of nickel, chromium, titanium, tantalum, niobium, palladium, and zirconium.

10. The process of claim 1, wherein the chemical vapor deposition takes place in a reducing atmosphere.

11. The process of claim 1, wherein the thickness of the metal layer is between 30 nm and 500 nm.

12. The process of claim 1, wherein the metal halide is WCL₆, MoCl₅, or MoF₅.

13. The process of claim 1, wherein the reducing agent is silane or hydrogen.

5. A process for electrolytically depositing a metal or metal alloy layer that contains copper or silver on a non-conductive substrate, which process comprises:

depositing on the substrate at least one metal layer based on tungsten or molybdenum to provide a tungsten or molybdenum coated substrate, wherein the at least one metal layer is sufficiently electrically conductive to allow subsequent electrolytic deposition of the copper or silver layer; and

electrolytically depositing the metal or metal alloy that contains copper or silver on the tungsten or molybdenum coated substrate.

6. The process according to claim 5, wherein the at least one tungsten or molybdenum layer is deposited by vacuum sputtering or by chemical vapor deposition using at least one tungsten- or molybdenum-containing precursor in the form of a metal halide or an organometallic compound and at least one reducing agent to form the layer.

7. The process according to claim 5, wherein the tungsten or molybdenum layer is etched before the copper or silver layer is electrolytically deposited.

8. The process according to claim 5, wherein each of the tungsten or molybdenum layer and the copper or silver layer are deposited and then etched.

9. The process according to claim 5, wherein the at least one metal layer is a tungsten layer and the etching of the tungsten layer is done with a solution comprising hydrogen peroxide and aqueous ammonia.

14. The process of claim 5, wherein the at least one metal layer based on tungsten or molybdenum is deposited by providing at least one tungsten- or molybdenum-containing precursor in the form of a metal halide or an organometallic compound and at least one reducing agent and forming the metal layer from the tungsten- or molybdenum-containing and at least one reducing agent by chemical vapor deposition.

15. The process of claim 14, wherein the chemical vapor deposition takes place in a reducing atmosphere.

16. The process of claim 14, wherein the thickness of the metal layer is between 30 nm and 500 nm.

17. The process of claim 14, wherein the metal halide is WCL₆, MoCl₅, or MoF₅ and the reducing agent is silane or hydrogen.