Method for improving surface wettability of low k material

• US 6,383,913 B1
• Filed: 04/06/2001
• Issued: 05/07/2002
• Est. Priority Date: 04/06/2001
• Status: Active Grant

• Current Assignee: United Microelectronics Corporation
• Original Assignee: United Microelectronics Corporation
• Inventors: Yang, Ming-Sheng, Tsai, Cheng-Yuan
• Primary Examiner(s): LEBENTRITT, MICHAEL
• Application Number:
  US09/828,368
• Time in Patent Office: 396 Days
• Field of Search: 438/296, 438/404, 438/424, 438/430, 438/627, 438/643, 438/660, 438/734, 438/624
• US Class Current: 438/624
• CPC Class Codes: H01L 21/76801 characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
• CPC Class Codes: H01L 21/7681 involving one or more buried masks
• CPC Class Codes: H01L 21/76825 by exposing the layer to particle radiation, e.g. ion implantation, irradiation with UV light or electrons etc. plasma treatment H01L21/76826
• CPC Class Codes: H01L 21/76834 formation of thin insulating films on the sidewalls or on top of conductors H01L21/76831 takes precedence

Abstract

A method for improving surface wettability of inorganic low dielectric material is disclosed. The method includes an inorganic dielectric material as a low-k dielectric barrier layer is spun-on the semiconductor device. Then, inorganic dielectric material surface is treated by ultraviolet (UV) treatment that the surface characteristic of inorganic dielectric material is changed from hydrophobic to hydrophilic. Thus, the surface wettability of inorganic dielectric material can be improved and adhesion ability between the inorganic dielectric material and organic polymer can be increased.

Claims

1. A method for forming a semiconductor device, said method comprising:

forming a dielectric layer on a semiconductor substrate;

forming a barrier layer on said dielectric layer; and

treating a surface of said barrier layer by ultraviolet treatment such that a surface characteristic is modified from hydrophobic to less hydrophobic.

2. The method according to claim 1, wherein material of said dielectric layer comprises organic polymer.

3. The method according to claim 1, wherein material of said barrier layer comprises inorganic dielectric material.

4. The method according to claim 3, wherein said forming barrier layer comprises chemical vapor deposition method.

5. The method according to claim l, further comprising an adhesion promoter coated on said barrier layer.

6. A method for forming a dual damascene structure, said method comprising:

providing a semiconductor, structure having a substrate, a first dielectric layer having a conductive region on said substrate thereby forming an interconnect structure, a first barrier layer on said first dielectric layer and said conductive region, a second dielectric layer on said first barrier layer, a second barrier layer on said second dielectric layer, a third dielectric layer on said second barrier layer;

forming a trench in said third dielectric layer, said second barrier layer, said second dielectric layer, and said first barrier layer over a first dielectric layer and said interconnect structure; and

treating a surface of said barrier layer by ultraviolet treatment such that a surface characteristic of said first barrier layer and said second barrier layer are modified from hydrophobic to less hydrophobic.

7. The method according to claim 6, wherein said conductive region comprises metal copper.

8. The method according to claim 7, wherein said metal copper is polished by chemical mechanical polishing method.

9. The method according to claim 6, wherein material of said first dielectric layer, said second dielectric layer, and third dielectric layer comprises organic polymer.

10. The method according to claim 6, further comprising a barrier layer formed on said first dielectric layer, said second dielectric layer, and third dielectric layer by chemical vapor deposition method.

11. The method according to claim 10, wherein material of said barrier layer comprises inorganic dielectric material.

12. The method according to claim 6, further comprising an adhesion promoter coated on said first barrier layer and said second barrier layer.

13. The method according to claim 12, further comprising a baking process is performed on said adhesion promoter.

14. A method for forming a dual damascene structure, said method comprising:

providing a semiconductor structure having a substrate, a first organic polymer layer having a conductive region on said substrate thereby forming an interconnect structure, a first inorganic dielectric layer on said first organic polymer layer and said conductive region, a second organic polymer layer on said first inorganic dielectric layer, a second inorganic dielectric layer on said second organic polymer layer, a third organic polymer layer on said second inorganic dielectric layer;

forming a trench in said third organic polymer layer, said second inorganic dielectric layer, said second organic polymer layer, and said first inorganic dielectric layer over said first organic polymer layer and said interconnect structure; and

treating a surface of said inorganic dielectric layer by ultraviolet treatment such that a surface characteristic of said first inorganic dielectric layer and said second inorganic dielectric layer are modified from hydrophobic to less hydrophobic.

15. The method according to claim 14, wherein said conductive region comprises metal copper.

16. The method according to claim 15, wherein said metal copper is polished by chemical mechanical polishing method.

17. The method according to claim 14, further comprising an organic polymer layer spun on said first inorganic dielectric layer and said second inorganic dielectric layer.

18. The method according to claim 14, wherein material of said inorganic dielectric layer comprises SiC.

19. The method according to claim 14, further comprising an adhesion promoter coated on said first inorganic dielectric layer and said second inorganic dielectric layer.

20. The method according to claim 19, further comprising a baking process is performed on said adhesion promoter.