Method for improving surface wettability of low k material
First Claim
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1. A method for forming a semiconductor device, said method comprising:
- forming a dielectric layer on a semiconductor substrate;
forming a barrier layer on said dielectric layer; and
treating a surface of said barrier layer by ultraviolet treatment such that a surface characteristic is modified from hydrophobic to less hydrophobic.
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Abstract
A method for improving surface wettability of inorganic low dielectric material is disclosed. The method includes an inorganic dielectric material as a low-k dielectric barrier layer is spun-on the semiconductor device. Then, inorganic dielectric material surface is treated by ultraviolet (UV) treatment that the surface characteristic of inorganic dielectric material is changed from hydrophobic to hydrophilic. Thus, the surface wettability of inorganic dielectric material can be improved and adhesion ability between the inorganic dielectric material and organic polymer can be increased.
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Citations
20 Claims
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1. A method for forming a semiconductor device, said method comprising:
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forming a dielectric layer on a semiconductor substrate;
forming a barrier layer on said dielectric layer; and
treating a surface of said barrier layer by ultraviolet treatment such that a surface characteristic is modified from hydrophobic to less hydrophobic. - View Dependent Claims (2, 3, 4)
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5. The method according to claim l, further comprising an adhesion promoter coated on said barrier layer.
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6. A method for forming a dual damascene structure, said method comprising:
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providing a semiconductor, structure having a substrate, a first dielectric layer having a conductive region on said substrate thereby forming an interconnect structure, a first barrier layer on said first dielectric layer and said conductive region, a second dielectric layer on said first barrier layer, a second barrier layer on said second dielectric layer, a third dielectric layer on said second barrier layer;
forming a trench in said third dielectric layer, said second barrier layer, said second dielectric layer, and said first barrier layer over a first dielectric layer and said interconnect structure; and
treating a surface of said barrier layer by ultraviolet treatment such that a surface characteristic of said first barrier layer and said second barrier layer are modified from hydrophobic to less hydrophobic. - View Dependent Claims (7, 8, 9, 10, 11, 12, 13)
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14. A method for forming a dual damascene structure, said method comprising:
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providing a semiconductor structure having a substrate, a first organic polymer layer having a conductive region on said substrate thereby forming an interconnect structure, a first inorganic dielectric layer on said first organic polymer layer and said conductive region, a second organic polymer layer on said first inorganic dielectric layer, a second inorganic dielectric layer on said second organic polymer layer, a third organic polymer layer on said second inorganic dielectric layer;
forming a trench in said third organic polymer layer, said second inorganic dielectric layer, said second organic polymer layer, and said first inorganic dielectric layer over said first organic polymer layer and said interconnect structure; and
treating a surface of said inorganic dielectric layer by ultraviolet treatment such that a surface characteristic of said first inorganic dielectric layer and said second inorganic dielectric layer are modified from hydrophobic to less hydrophobic. - View Dependent Claims (15, 16, 17, 18, 19, 20)
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Specification