Silicone polymer insulation film on semiconductor substrate and method for forming the film
First Claim
1. A method for forming a silicone polymer insulation film on a semiconductor substrate by plasma treatment, comprising the steps of:
- providing a reaction gas consisting of a source gas and an additive gas to a reaction chamber for plasma CVD processing wherein a semiconductor substrate is placed, said source gas comprising a silicon-containing hydrocarbon compound having formula Siα
Oα
−
1R2α
−
β
+2(OCnH2n+1)β
wherein α
is an integer of 1-3, β
is 1 or 2, n is an integer of 1-3, and R is C1-6 hydrocarbon attached to Si, said additive gas being composed of an inert or inactive gas and optionally a reducing gas;
heating the substrate to a point near or higher than the heat resistance temperature required for the film; and
activating plasma polymerization reaction in the reaction chamber where the reaction gas is present, to form a silicone polymer film on the semiconductor substrate, while controlling the flow of the reaction gas to lengthen a residence time, Rt, of the reaction gas in the reaction chamber, wherein 100 msec≦
Rt,
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Abstract
A method for forming a silicone polymer insulation film having a low dielectric constant, high thermal stability, high humidity-resistance, and high O2 plasma resistance on a semiconductor substrate is applied to a plasma CVD apparatus. The first step is introducing a silicon-containing hydrocarbon compound expressed by the general formula SiαOα−1(R)2α−β+2(OCnH2n+1)β (α, β, x, and y are integers) and then introducing the vaporized compound to the reaction chamber of the plasma CVD apparatus. The residence time of the material gas is lengthened by, for example, reducing the total flow of the reaction gas, in such a way as to form a silicone polymer film having a micropore porous structure with a low dielectric constant.
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Citations
13 Claims
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1. A method for forming a silicone polymer insulation film on a semiconductor substrate by plasma treatment, comprising the steps of:
-
providing a reaction gas consisting of a source gas and an additive gas to a reaction chamber for plasma CVD processing wherein a semiconductor substrate is placed, said source gas comprising a silicon-containing hydrocarbon compound having formula Siα
Oα
−
1R2α
−
β
+2(OCnH2n+1)β
wherein α
is an integer of 1-3, β
is 1 or 2, n is an integer of 1-3, and R is C1-6 hydrocarbon attached to Si, said additive gas being composed of an inert or inactive gas and optionally a reducing gas;
heating the substrate to a point near or higher than the heat resistance temperature required for the film; and
activating plasma polymerization reaction in the reaction chamber where the reaction gas is present, to form a silicone polymer film on the semiconductor substrate, while controlling the flow of the reaction gas to lengthen a residence time, Rt, of the reaction gas in the reaction chamber, wherein 100 msec≦
Rt, - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13)
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Specification