CMOS compatible pixel cell that utilizes a gated diode to reset the cell

• US 6,384,398 B1
• Filed: 05/08/2001
• Issued: 05/07/2002
• Est. Priority Date: 10/14/1998
• Status: Expired due to Term

• Current Assignee: Omnivision Technologies Incorporated (Will Semiconductor Co., Ltd. Shanghai)
• Original Assignee: National Semiconductor Corporation (Texas Instruments, Inc.)
• Inventors: Kalnitsky, Alexander, Bergemont, Albert, Poplevine, Pavel
• Primary Examiner(s): ALLEN, STEPHONE B
• Application Number:
  US09/851,203
• Time in Patent Office: 364 Days
• Field of Search: 250/208.1, 250/214.1, 257/292, 348/302, 348/311, 348/312, 348/320
• US Class Current: 250/208.1
• CPC Class Codes: H01L 27/14609 Pixel-elements with integrated switching, control, storage or amplification elements scanning details of imagers (circuitry of solid-state image sensors H04N25/00); circuitry of imagers H04N25/70
• CPC Class Codes: H01L 27/1463 Pixel isolation structures
• CPC Class Codes: H01L 27/14654 Blooming suppression

Abstract

The potential on a pixel cell having a gated diode and a read out transistor is set to an initial level prior to an image integration period. During the image integration period, absorbed photons cause the potential on the pixel cell to change. After the image integration period, the pixel cell is then reset and read out by applying a number of pulses to the gated diode. Each of the pulses causes a fixed amount of charge to be injected into the cell. When the potential on the cell has again returned to the initial level, the number of absorbed photons is determined by counting the number of pulses that were required to return the potential to the initial level. The read out transistor is used to determine when the potential is at the initial level by biasing the transistor to output a current that corresponds to the potential on the pixel cell.

Claims

1. An imaging system formed in a semiconductor material of a first conductivity type, the system comprising:

a plurality of pixel cells formed in rows and columns;

a plurality of row select lines connected to the pixel cells so that each row select line is connected to the pixels in a row of pixels;

a plurality of oscillator output lines connected to the pixel cells so that each oscillator output line is connected to the pixels in a row of pixels;

a plurality of read out lines connected to the pixel cells so that each read out line is connected to the pixels in a column of pixels;

a plurality of counters arranged so that a counter corresponds with each column of pixel cells;

a counter output line connected to each counter;

a plurality of control lines connected to the counters so that each control line is connected to a counter;

an oscillator/controller connected to the row select lines, the oscillator output lines, the read out lines, the counter output line, and the control lines.

2. The imaging system of claim 1 wherein a pixel cell includes:

a first well of a second conductivity type formed in the semiconductor material;

a second well of the first conductivity type formed in the first well;

a gated diode having;

a diffusion region of the second conductivity type formed in the second well;

an inversion region defined in the second well, the inversion region adjoining the diffusion region;

a layer of oxide formed over the inversion region; and

a diode gate formed on the layer of oxide layer;

a read out transistor including;

spaced-apart source and drain regions formed in the second well, the source and drain regions being spaced apart from the diffusion region and the inversion region;

a channel region defined in the second well between the source and drain regions;

a layer of gate oxide formed over the channel region; and

a read out gate formed on the layer of gate oxide over the channel region; and

a cell diode connected between the diffusion region and ground; and

a select transistor connected to the source region.

3. A method for operating an imaging system formed in a semiconductor material of a first conductivity type, the system comprising:

a pixel cell having;

a first well of a second conductivity type formed in the semiconductor material;

a second well of the first conductivity type formed in the first well;

a gated diode formed in the second well; and

a read out transistor formed in the second well, the read out transistor being spaced apart from the gated diode;

a select transistor connected to the read out transistor; and

a cell diode connected between the gated diode and ground; and

a control circuit having;

an oscillator connected to the gated diode;

a counter connected to the gated diode; and

a controller connected to the oscillator, the gated diode, and the select transistor;

the method comprising the steps of;

setting a potential on the second well to a first level;

collecting a plurality of photons in the first and second wells, the plurality of photons changing the potential on the second well to a second level; and

applying a number of pulses to the gated diode via the oscillator until the potential on the second well returns to the first level;

counting the number of pulses applied to the gated diode that are required to return the potential on the second well to the first level with the counter.

4. A method for operating an imaging system formed in a semiconductor material of a first conductivity type, the system comprising:

a plurality of pixel cells formed in rows and columns;

a plurality of row select lines connected to the pixel cells so that each row select line is connected to the pixels in a row of pixels;

a plurality of oscillator output lines connected to the pixel cells so that each oscillator output line is connected to the pixels in a row of pixels;

a plurality of read out lines connected to the pixel cells so that each read out line is connected to the pixels in a column of pixels;

a plurality of counters arranged so that a counter corresponds with each column of pixel cells;

a counter output line connected to each counter;

a plurality of control lines connected to the counters so that each control line is connected to a counter; and

an oscillator/controller connected to the row select lines, the oscillator output lines, the read out lines, the counter output line, and the control lines,

the method comprising the steps of;

selecting via the controller a row of pixel cells to be read out;

applying a row select voltage to the row select line that corresponds with the row of pixel cells to be read out;

applying a number of pulses to the oscillator output line that corresponds with the row of cells to be read out, the pulses changing a potential on each of the cells to be read out; and

counting the number of pulses required to set the potential of each cell to a first level.