Semiconductor device and method for producing the same
First Claim
1. A photo-detecting device comprising:
- a semiconductor substrate;
a multilayer structure formed on the semiconductor substrate;
an island-like photo-detecting region formed in at least a portion of the multilayer structure, the island-like photo-detecting region having a central portion; and
a light-shielding mask formed on the semiconductor substrate so as to shield from light a portion of the island-like photo-detecting region at least excluding the central portion, wherein the light-shielding mask comprises an upper metal film and a lower metal film, and the upper metal film and the lower metal film are at least partially isolated by an insulative film, the upper metal film and the lower metal film having different patterns.
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Accused Products
Abstract
A photo-detecting device includes: a semiconductor substrate; a multilayer structure formed on the semiconductor substrate; an island-like photo-detecting region formed in at least a portion of the multilayer structure, the island-like photo-detecting region having a central portion; and a light-shielding mask formed on the semiconductor substrate so as to shield from light a portion of the island-like photo-detecting region at least excluding the central portion. The light-shielding mask comprises an upper metal film and a lower metal film, and the upper metal film and the lower metal film are at least partially isolated by an insulative film, the upper metal film and the lower metal film having different patterns.
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Citations
11 Claims
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1. A photo-detecting device comprising:
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a semiconductor substrate;
a multilayer structure formed on the semiconductor substrate;
an island-like photo-detecting region formed in at least a portion of the multilayer structure, the island-like photo-detecting region having a central portion; and
a light-shielding mask formed on the semiconductor substrate so as to shield from light a portion of the island-like photo-detecting region at least excluding the central portion, wherein the light-shielding mask comprises an upper metal film and a lower metal film, and the upper metal film and the lower metal film are at least partially isolated by an insulative film, the upper metal film and the lower metal film having different patterns. - View Dependent Claims (2, 3, 4, 5)
wherein the upper metal film and the lower metal film mob have an inner end portion located in the vicinity of the photo-detecting region, wherein the inner end portion of the upper metal film is located more closely to the photo-detecting region, along a horizontal direction, than the inner end portion of the lower metal film, and the upper metal film is not provided in a further region which is located at a predetermined distance from The photo-detecting region, the further region being shielded from light by the lower metal film. -
3. A photo-detecting device according to claim 2, wherein the inner end portion of the upper metal film is in an overlapping relation with the photo-detecting region.
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4. A photo-detecting device according to claim 1, wherein the upper metal film is electrically coupled with the lower metal film via an opening in the insulative film.
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5. A photo-detecting device according to claim 1,
wherein an outer end portion of the semiconductor substrate is shielded from light by the lower metal film, and wherein The insulative film and the upper metal film are not formed on the outer end portion of the semiconductor substrate.
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6. A photo-detecting device comprising:
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a semiconductor substrate;
a light absorption layer and a window layer formed in this order on the semiconductor substrate;
a diffusion region formed in an island-like shape in the window layer;
a negative electrode formed on a portion of the diffusion region;
an insulative film formed on a portion of the window layer at least excluding a central portion of the diffusion region;
a pad formed on a region of the insulative film which is located at a predetermined distance from the diffusion region;
wiring formed on the insulative film for electrically connecting the negative electrode with the pad;
an upper metal film formed on the insulative film so as to surround the diffusion region without overlapping the wiring; and
a lower metal film formed between the window layer and the insulative film, wherein the negative electrode, the pad, the wiring, and the upper metal film are formed from the same thin metal film. - View Dependent Claims (7, 8, 9, 10, 11)
wherein the contact hole is located in a region where the window layer and the light absorption layer above the semiconductor substrate has been removed, and wherein the positive electrode comprises a portion of the lower metal film which is present in an exposed surface of the contact hole. -
10. A photo-detecting device according to claim 6, further comprising a positive electrode formed on the semiconductor substrate and a back face metal film formed on a back face of the semiconductor substrate.
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11. A photo-detecting device according to claim 6, further comprising a side face metal film formed on at least one side face of the semiconductor substrate, the light absorption layer, and the window layer.
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Specification