Integration of remote plasma generator with semiconductor processing chamber

• US 6,387,207 B1
• Filed: 04/28/2000
• Issued: 05/14/2002
• Est. Priority Date: 04/28/2000
• Status: Expired due to Term

• Current Assignee: Applied Materials Incorporated
• Original Assignee: Applied Materials Incorporated
• Inventors: Janakiraman, Karthik, Pan, Rong, Chen, Chen-An, Le, Paul, Venkataraman, Shankar, Fong, Kelly
• Primary Examiner(s): DANG, THI D
• Application Number:
  US09/561,325
• Time in Patent Office: 746 Days
• Field of Search: 156/345, 118/723.ME
• US Class Current: 156/345.35
• CPC Class Codes: H01J 37/32357 Generation remote from the workpiece, e.g. down-stream
• CPC Class Codes: H01J 37/3244 Gas supply means
• CPC Class Codes: H01J 37/32458 Vessel

Abstract

A compact, self-contained remote plasma generator is mounted on the lid of a semiconductor processing chamber to form an integrated substrate processing system. The remote plasma generator is activated in a clean operation to generate cleaning plasma species to provide better cleaning of the chamber and lower perfluorocarbon emissions than in situ plasma clean processes. A three-way valve is adjustable to control gas flow to the chamber. During the clean operation, the three-way valve directs a cleaning plasma precursor from a first gas line to the remote plasma generator to generate cleaning plasma species which are flowed to the chamber for cleaning deposits therein. During a deposition process, the three-way valve directs a first process gas from the flat gas line to the chamber, bypassing the remote plasma generator. The first process gas is typically mixed with a second process gas supplied from a second gas line in a mixing device prior to entering the chamber for depositing a layer on a substrate disposed therein.

Claims

1. A substrate processing system comprising:

a housing defining a process chamber;

a substrate support for supporting a substrate during substrate processing in the process chamber;

a remote plasma generator having an inlet and an outlet; and

a gas delivery system for introducing gases into the process chamber, the gas delivery system including

a three-way valve having a valve inlet, a fist valve outlet, and a second valve outlet, the three-way valve being adjustable to switch flow between a first valve path from the valve inlet to the first valve outlet and a second valve path from the valve inlet to the second valve outlet;

a first inlet flow conduit coupled between the outlet of the remote plasma generator and the process chamber;

a remote plasma conduit coupled between the first valve outlet of the three-way valve and the inlet of the remote plasma generator; and

a second inlet flow conduit coupled between the second valve outlet of the three-way valve and the process chamber.

2. The substrate processor system of claim 1 wherein the three-way valve is pneumatically operated.

3. The substrate processing system of claim 1 wherein the gas delivery system further includes a third inlet flow conduit coupled with the process chamber.

4. The substrate processing system of claim 3 wherein the gas delivery system further includes a vaporizer coupled with the third inlet flow conduit.

5. The substrate processing system of claim 3 wherein the first inlet flow conduit, the second inlet flow conduit, and the third inlet flow conduit are coupled with the process chamber at a chamber inlet disposed generally above the substrate support.

6. The substrate processing system of claim 3 wherein the gas delivery system further includes a mixing device, the mixing device having an outlet coupled with the process chamber, a first inlet coupled with the first inlet flow conduit, a second inlet coupled with the second inlet flow conduit, and a third inlet coupled with the inlet flow conduit.

7. The substrate processing system of claim 6 wherein the mixing device has a first flow path between the first inlet and the outlet, a second flow path between the second inlet and the outlet, and a third flow path between the third inlet and the outlet, the second flow path and third flow path being at least partially overlapped.

8. The substrate processing system of claim 7 wherein the first flow path is substantially shorter in length than the second and third flow paths.

9. The substrate processing system of claim 7 wherein the second and third flow paths include a plurality of turns.

10. The substrate processing apparatus of claim 1 wherein the remote plasma generator is mounted on a lid of the process chamber disposed generally above the substrate sport.

11. The substrate processing apparatus of claim 10 further comprising a ceramic isolator coupled between the remote plasma generator and the process chamber, the ceramic isolator including a flow passage forming a portion of the first inlet flow conduit coupled between the outlet of the remote plasma generator and the process chamber.

12. The substrate processing apparatus of claim 11 wherein the process chamber includes a gas distribution manifold having a plurality of outlet apertures disposed above the substrate, the gas distribution manifold being fluidicly coupled with the flow passage of the ceramic isolator.

13. A substrate processing system comprising:

a housing defining a process chamber;

a substrate support for supporting a substrate during substrate processing in the process chamber;

a remote plasma generator;

a first gas line;

a second gas line;

a first gas supply for a first gas;

a second gas supply for a second gas;

a third gas supply for a third gas; and

means for coupling the first gas supply with the first gas line to flow the first gas through the first gas line and the remote plasma generator to the process chamber during a first operation, and for coupling the second gas supply with the first gas line to flow the second gas through the first gas line to the process chamber bypassing the remote plasma generator, coupling the third gas supply with the second gas line to flow the third gas into the process chamber, and mixing the second gas and the third gas together prior to flowing the second and third gases into the process chamber, in a second operation.

14. The substrate processing apparatus of claim 13 further comprising a ceramic isolator having a flow passage fluidicly coupled between the remote plasma generator and the process chamber.

15. The substrate processing apparatus of claim 14 wherein the process chamber includes a gas distribution manifold having a plurality of outlet apertures disposed above the substrate, the gas distribution manifold being fluidicly coupled with the flow passage of the ceramic isolator.

16. The substrate processing apparatus of claim 13 wherein the housing includes a lid disposed generally above the substrate support and wherein the remote plasma generator is mounted on the lid.

17. The substrate processing system of claim 13 further comprising a vaporizer coupled with the second gas line.

18. The substrate processing system of claim 13 further comprising means for controlling pressure in the remote plasma generator and pressure in the process chamber.

19. The substrate processing system of claim 18 wherein the controlling means includes instructions for providing a pressure in the remote plasma generator which is higher than the pressure in the process chamber.

20. The substrate processing system of claim 19 wherein the controlling means includes instructions for providing a pressure in the remote plasma generator which is at least about 10 times the pressure in the process chamber.

21. The substrate processing system of claim 20 wherein the controlling means includes instructions for providing a pressure in the remote plasma generator which is at least about 30 times the pressure in the process chamber.