Method for exposing features on non-planar resists

• US 6,387,597 B1
• Filed: 09/01/2000
• Issued: 05/14/2002
• Est. Priority Date: 06/05/1998
• Status: Expired due to Term

• Current Assignee: Kodak Canada ULC
• Original Assignee: CREO SRL
• Inventors: Gelbart, Daniel
• Primary Examiner(s): Young, Christopher G.
• Application Number:
  US09/654,042
• Time in Patent Office: 620 Days
• Field of Search: 430/311, 430/330, 430/394, 430/397, 430/945, 430/964, 430/270.1, 430/328, 430/322
• US Class Current: 430/311
• CPC Class Codes: G03F 7/2022 Multi-step exposure, e.g. hybrid; backside exposure; blanket exposure, e.g. for image reversal; edge exposure, e.g. for edge bead removal; corrective exposure
• CPC Class Codes: G03F 7/70291 Addressable masks, e.g. spatial light modulators [SLMs], digital micro-mirror devices [DMDs] or liquid crystal display [LCD] patterning devices
• CPC Class Codes: G03F 7/70358 Scanning exposure, i.e. relative movement of patterned beam and workpiece during imaging
• CPC Class Codes: G03F 7/70383 Direct write, i.e. pattern is written directly without the use of a mask by one or multiple beams maskless lithography using a programmable mask G03F7/70291
• CPC Class Codes: G03F 7/70466 Multiple exposures, e.g. combination of fine and coarse exposures, double patterning or multiple exposures for printing a single feature stitching G03F7/70475
• CPC Class Codes: H05K 3/0082 characterised by the exposure method of radiation-sensitive masks
• CPC Class Codes: Y10S 430/146 Laser beam

Abstract

A method for imaging a non-planar resist uses a non-integrating resist. The resist may be a thermoresist which changes from an unexposed state to an exposed state upon heating to a threshold temperature. The method involves using a variable focus optical system and making a plurality of exposures at different focus settings. The duration and intensity of the exposures is selected so that areas on the resist corresponding to in-focus features are heated to temperatures in excess of the threshold temperature and become exposed whereas areas on the resist corresponding to out-of-focus features are heated to temperatures which are insufficient to expose the resist.

Claims

1. A method for imagewise exposing a non-planar resist layer, the method comprising:

a) providing a variable focus optical system and a non-planar, layer of a non-integrating resist on a substrate;

b) illuminating selected areas on a surface of the resist layer a first time with the optical system at a first focus setting and thereby causing parts of the resist which are within the selected areas on the substrate and are at a first elevation to be converted from an unexposed state to an exposed state while not converting the resist in the selected areas at a second elevation; and

,

c) illuminating the selected areas on the surface of the resist layer a second time with the optical system at a second focus setting and thereby causing parts of the resist which are within the selected areas on the substrate and are at the second elevation to be converted from the unexposed state to the exposed state.

2. The method of claim 1 wherein the resist layer comprises a thermoresist which is converted to its exposed state upon heating to a temperature in excess of a threshold temperature.

3. The method of claim 2 comprising waiting for a period longer than a thermal time constant of the resist layer between illuminating the surface the first and second times.

4. The method of claim 2 wherein, at elevations within a zone of focus of the optical system, the optical system focuses light from a light source to an intensity sufficient to cause a temperature of the thermoresist to exceed the threshold temperature.

5. The method of claim 4 wherein, at elevations outside of the zone of focus, the light from the light source is defocused and has an intensity insufficient to cause a temperature of the thermoresist to exceed the threshold temperature.

6. The method of claim 1 wherein the optical system comprises a mask which blocks radiation from passing to the substrate except within the selected areas.

7. The method of claim 1 wherein the optical system comprises a laser light source.

8. The method of claim 7 wherein the laser light source comprises an ultraviolet light laser.

9. The method of claim 7 wherein the laser light source comprises an infrared light laser.

10. The method of claim 1 wherein illuminating the substrate the first and second times comprises scanning one or more modulated focused light beams generated by the optical system in two dimensions across the substrate.

11. The method of claim 1 wherein illuminating the substrate the first and second times comprises illuminating the substrate with ultraviolet light.

12. The method of claim 2 wherein illuminating the substrate the first and second times comprises illuminating the substrate with ultraviolet light.

13. The method of claim 1 wherein illuminating the substrate the first and second times comprises illuminating the substrate with infrared light.

14. The method of claim 2 comprising illuminating the surface of the resist a plurality of times with the optical system at the first focus setting, wherein a different set of selected areas is exposed in each of the plurality of times.

15. The method of claim 14 comprising illuminating the surface of the resist a plurality of times with the optical system at the second focus setting, wherein a different set of selected areas is exposed in each of the plurality of times.

16. The method of claim 1 wherein an image to be exposed on the resist layer comprises a plurality of pixels arranged in a grid comprising a plurality of rows and a plurality of columns;

an image to be exposed on the resist comprises a selected set of the pixels; and

illuminating the surface of the resist the first time comprises separately illuminating two or more groups of the selected pixels such that in the groups of the selected pixels no two pixels are in adjacent rows and no two pixels are in adjacent columns.

17. The method of claim 2 wherein an image to be exposed on the resist layer comprises a plurality of pixels arranged in a grid comprising a plurality of rows and a plurality of columns;

an image to be exposed on the resist comprises a selected set of the pixels; and

illuminating the surface of the resist the first time comprises separately illuminating two or more groups of the selected pixels such that in the groups of the selected pixels no two pixels are in adjacent rows and no two pixels are in adjacent columns.

18. The method of claim 1 wherein an image to be exposed on the resist layer comprises a plurality of pixels arranged in a grid comprising a plurality of consecutively numbered rows and a plurality of consecutively numbered columns;

an image to be exposed on the resist comprises a selected set of the pixels; and

illuminating the surface of the resist the first time comprises separately illuminating two or more groups of the selected pixels such that in a first one of the groups the selected pixels are in odd numbered columns and in a second group of the selected pixels the selected pixels are in even-numbered columns.

19. The method of claim 1 wherein illuminating the selected areas of the resist comprises substantially covering a surface area of the resist by scanning an image of a light source across the resist in a plurality of substantially parallel-sided stripes and modulating the scanned image to illuminate the selected areas.

20. A method for imagewise exposing a non-planar resist layer, the method comprising:

a) providing a variable focus optical system and a non-planar, layer of a non-integrating thermoresist on a substrate, the thermoresist changing from an unexposed state to an exposed state upon heating to a threshold temperature;

b) focusing the optical system to generate an in-focus image of a set of features in a first plane of focus of the optical system;

c) illuminating the set of features on a surface of the resist layer a first time for a duration sufficient to heat the illuminated portions of the resist which are in the first plane of focus to a temperature in excess of the threshold temperature at an intensity such that illuminated portions of the resist which are not in the first plane of focus are not heated to the threshold temperature;

d) focusing the optical system to generate an in-focus image of a set of features in a second plane of focus of the optical system; and

,

e) illuminating the set of features on a surface of the resist layer a second time for a duration sufficient to heat the illuminated portions of the resist which are in the second plane of focus to a temperature in excess of the threshold temperature at an intensity such that illuminated portions of the resist which are not in the second plane of focus are not heated to the threshold temperature.

21. The method of claim 20 comprising waiting for 2 or more thermal time constants of the resist between illuminating the set of features on the resist the first time and illuminating the set of features on the resist the second time.