Method for manufacturing microfabrication apparatus

• US 6,387,713 B2
• Filed: 06/04/2001
• Issued: 05/14/2002
• Est. Priority Date: 06/05/2000
• Status: Expired due to Fees

• Current Assignee: Sony Corporation (Sony Group Corp.)
• Original Assignee: Sony Corporation (Sony Group Corp.)
• Inventors: Hara, Masaki
• Primary Examiner(s): Bowers, Charles
• Assistant Examiner(s): Blum, David S
• Application Number:
  US09/874,165
• Publication Number:
  US 20020019064A1
• Time in Patent Office: 344 Days
• Field of Search: 438/3, 438/405, 438/406, 438/412, 257/421
• US Class Current: 438/3
• CPC Class Codes: B81C 1/0019 Flexible or deformable structures not provided for in groups B81C1/00142 - B81C1/00182
• CPC Class Codes: B81C 2201/034 Moulding

Abstract

To offer a microstructure fabrication apparatus capable of realizing MEMS and a Rugate Filter excellent in performance characteristics by patterning a thick functional material film in high aspect ratio with a simple and practical manufacturing method. A Si layer is employed for a mask pattern. The advantages of the Si layer are withstood a process conducted at high temperature for forming a PZT layer, which is the functional material layer, patterned in high aspect ratio, and achieves excellent process consistency for the whole manufacturing processes of the microfabrication. A trench or a gap is formed with the mask pattern deeper than the desired PZT layer. The PZT layer, or functional material layer (films) is formed on the whole surface including the bottom of the concave part of the mask pattern. The PZT layer deposited on the mask pattern is removed with the mask pattern itself, and selectively remains the pattern of the PZT layer, thereby obtaining a pattern of the desired functional material layer.

Claims

1. A method for manufacturing a microfabrication apparatus comprising steps of:

forming a mask pattern by providing a trench or a gap deeper than a desired functional material layer within a semiconductor layer;

depositing the functional material layer in a manner to be thinner than the semiconductor layer; and

obtaining a pattern of the functional material layer by removing the mask pattern.

2. A method for manufacturing a microfabrication apparatus according to claim 1 comprising a step of:

bonding the silicon substrate on another substrate with an anodix oxidation method;

wherein the silicon substrate is employed as the semiconductor layer.

3. A method for manufacturing a microfabrication apparatus according to claim 1, wherein a silicon portion of a SOI substrate is employed as the semiconductor layer.

4. A method for manufacturing a microfabrication apparatus according to claim 1, wherein the functional material layer is deposited with a gas deposition method.

5. A method for manufacturing a microfabrication apparatus according to claim 1, wherein the mask pattern is formed by a dry etching method using SF₆ gas and C₄F₈ gas.

6. A method for manufacturing a microfabrication apparatus according to claim 1, wherein the mask pattern is selectively removed with XeF₂ or BrF₃.

7. A method for manufacturing a microfabrication apparatus comprising steps of:

forming a mask pattern by coating a surface of a photoresist layer with a cap film after a trench or a gap deeper than a desired functional material layer is provided within the photoresist layer;

depositing the functional material layer in a manner to be thinner than the photoresist layer at least in the trench or the gap of the mask pattern; and

obtaining a pattern made of the functional material layer by removing the mask pattern.

8. A method for manufacturing a microfabrication apparatus according to claim 7, wherein the functional material layer is deposited with a gas deposition method.

9. A method for manufacturing a microfabrication apparatus comprising steps of:

forming a mask pattern by providing a trench or a gap deeper than a desired functional material layer within an organic compound film;

depositing the functional material layer in a manner to be thinner than the organic compound film at least in the trench or the gap of the mask pattern; and

obtaining a pattern of the functional material layer by removing the mask pattern.

10. A method for manufacturing a microfabrication apparatus according to claim 9, wherein the trench or the gap is provided within the organic compound film with a laser abrasion method.

11. A method for manufacturing a microfabrication apparatus according to claim 9 comprises a step of laminating the organic compound film on another substrate.

12. A method for manufacturing a microfabrication apparatus according to claim 11, wherein after the trench or the gap is provided within the organic compound film, the organic compound film is laminated on another substrate.

13. A method for manufacturing a microfabrication apparatus according to claim 9, wherein the functional material layer is deposited with the gas deposition method.