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Switch mode power supply with reduced switching losses

  • US 6,388,287 B2
  • Filed: 03/12/2001
  • Issued: 05/14/2002
  • Est. Priority Date: 09/11/1998
  • Status: Expired due to Term
First Claim
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1. A switch mode power supply, comprising:

  • a switching transistor having a load path formed by a first main connection and a second main connection, said first main connection and said second main connection for receiving a voltage applied thereto, said switching transistor including a semiconductor body with a semiconductor layer of a first conductance type forming a drift area;

    a load connected in series with said load path of said switching transistor;

    a continuous drain region of a second conductance type incorporated into said drift area and connected to said first main connection;

    a continuous source region of the second conductance type incorporated into said drift area and connected to said second main connection;

    a reverse-biased pn-junction produced by an interaction between said semiconductor body and said continuous drain region and between said semiconductor body and said continuous source region;

    said reverse-biased pn-junction having a large inner voltage-dependent surface area that is variable as a function of the voltage applied to said first main connection and said second main connection;

    when the voltage applied is 10 V, said switching transistor is characterized by a first product of a switch-on resistance Ron and a gate charge Qgtot, the first product given by;

    Ron*Qgtot/10 V≦

    2.5 ns; and

    when the voltage applied is 400 V, said switching transistor is characterized by a second product of the switch-on resistance Ron and energy Eds stored in a drain-source capacitance, the second product given by Ron*Eds

    1.6 V2 μ

    s.

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