Semiconductor device with rapid reverse recovery characteristic

• US 6,388,306 B1
• Filed: 07/18/2000
• Issued: 05/14/2002
• Est. Priority Date: 01/28/2000
• Status: Expired due to Fees

• Current Assignee: Mitsubishi Denki Kabushiki Kaisha (Mitsubishi Electric Corporation)
• Original Assignee: Mitsubishi Denki Kabushiki Kaisha (Mitsubishi Electric Corporation)
• Inventors: Satoh, Katsumi, Hirano, Noritoshi
• Primary Examiner(s): Nelms, David
• Assistant Examiner(s): Nguyen, Thinh
• Application Number:
  US09/619,316
• Time in Patent Office: 665 Days
• Field of Search: 257/657, 257/656, 257/655, 257/617, 257/612, 257/577, 257/156, 257/342, 257/333, 257/331, 257/330
• US Class Current: 257/551
• CPC Class Codes: H01L 29/861 Diodes
• CPC Class Codes: H01L 29/87 Thyristor diodes, e.g. Shockley diodes, break-over diodes

Abstract

An object is to obtain a semiconductor device having a PN junction which can suppress voltage oscillation without exerting any adverse effects. The film thickness of the N⁻ layer (101) is set to satisfy both of a first condition that the depletion layer extending in the N⁻ layer (101) from the PN junction between the N⁻ layer (101) and the P layer (102) does not reach the N⁺ layer (103) when a reverse voltage of about ½ to ⅔ of the voltage blocking capability of the diode is applied and a second condition that the depletion layer reaches the N⁺ layer (103) when a reverse voltage exceeding about ⅔ of the voltage blocking capability is applied. Further, the impurity concentration (specific resistance) of the N⁻ layer (101) is set so that the electric field which acts on the depletion layer when the reverse bias voltage is set equivalent to the voltage blocking capability does not exceed the maximum field strength of silicon.

Claims

1. A semiconductor device comprising:

a first conductivity type first semiconductor layer;

a first conductivity type second semiconductor layer being formed on said first semiconductor layer, said second semiconductor layer having a lower impurity concentration of the first conductivity type than said first semiconductor layer;

a second conductivity type third semiconductor layer being formed on said second semiconductor layer;

a first main electrode formed over said third semiconductor layer; and

a second main electrode formed under said first semiconductor layer;

wherein the film thickness of said second semiconductor layer is set to satisfy both of a first condition that a depletion layer extending from a PN junction at an interface between said second semiconductor layer and said third semiconductor layer does not reach said first semiconductor layer when a reverse voltage of about ½

to ⅔

of the reverse-direction voltage blocking capability of said PN junction is applied to said first and second main electrodes, and a second condition that the depletion layer extending from said PN junction reaches said first semiconductor layer when a reverse voltage exceeding about ⅔

of said voltage blocking capability is applied to said first and second main electrodes.

2. The semiconductor device according to claim 1, wherein

said first main electrode includes a main electrode formed directly on said third semiconductor layer, and

said second main electrode comprises a main electrode formed directly on the underside of said first semiconductor layer.

3. The semiconductor device according to claim 1, further comprising:

a second conductivity type fourth semiconductor layer <

106>

being formed under said first semiconductor layer, wherein

said first main electrode includes a main electrode formed directly on said third semiconductor layer, and

said second main electrode includes a main electrode formed directly on the underside of said fourth semiconductor layer.

4. The semiconductor device according to claim 1, further comprising:

a second conductivity type fourth semiconductor layer being formed under said first semiconductor layer; and

a first conductivity type fifth semiconductor layer being formed on said third semiconductor layer, wherein

said first main electrode includes a main electrode formed directly on said fifth semiconductor layer, and

said second main electrode includes a main electrode formed directly on the underside of said fourth semiconductor layer.

5. The semiconductor device according to claim 2, wherein

said third semiconductor layer comprises a plurality of semiconductor regions formed selectively in a surface of said second semiconductor layer, and

said first main electrode comprises a plurality of partial electrodes formed on said plurality of semiconductor regions, respectively.

6. The semiconductor device according to claim 2, wherein

the lifetime in the vicinity of the interface between said second and third semiconductor layers is set shorter than the lifetime in the vicinity of the interface between said first and second semiconductor layers.

7. The semiconductor device according to claim 1, wherein

said second condition includes a condition that the depletion layer extending from said PN junction reaches said first semiconductor layer when a reverse voltage equivalent to said voltage blocking capability is applied to said first and second main electrodes.

8. The semiconductor device according to claim 1, wherein

said impurity concentration of said second semiconductor layer is set to satisfy a third condition that electric field which acts on said depletion layer when a reverse bias voltage equivalent to said voltage blocking capability is set is at an actual use level not more than a predetermined field strength.

9. The semiconductor device according to claim 1, wherein

said first conductivity type includes N type, and

said second conductivity type includes P type.