Multi-phasic microphotodetector retinal implant with variable voltage and current capability
First Claim
1. A retinal implant for electrically inducing formed vision in an eye, the retinal implant comprising:
- a plurality of first layer microphotodetector pairs for receiving light incident on the eye, each first layer microphotodetector pair comprising;
a PiN microphotodetector and a NiP microphotodetector, wherein the P-portion of the PiN microphotodetector and the N-portion of the NiP microphotodetector are aligned on a first end, and the N-portion of the piN microphotodetector and the P-portion of the NiP microphotodetector are aligned on a second end; and
a common electrode in electrical communication between the P-portion and the N-portion of the first end of the microphotodetector pair;
a gain adjustment layer having a first side and a second side, the first side having a first portion electrically connected in series with the second end of at least a portion of the plurality of first layer microphotodetector pairs, and a second portion integrally formed with the first portion and extending away from the first portion, wherein the second portion is oriented to receive light incident on the eye; and
, a common electrode plane in electrical contact with the second side of the gain adjustment layer, whereby the common electrode plane serves as an electrical ground for the retinal implant.
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Accused Products
Abstract
A visible and infrared light powered retinal implant is disclosed that is implanted into the subretinal space for electrically inducing formed vision in the eye. The retinal implant includes a stacked microphotodetector arrangement having an image sensing pixel layer and a voltage and current gain adjustment layer for providing variable voltage and current gain to the implant so as to obtain better low light implant performance than the prior art, and to compensate for high retinal stimulation thresholds present in some retinal diseases. A first light filter is positioned on one of the microphotodetectors in each of the image sensing pixels of the implant, and a second light filter is positioned on the other of the microphotodetectors in the image sensing pixel of the implant, each of the microphotodetectors of the pixel to respond to a different wavelength of light to produce a sensation of darkness utilizing the first wavelength, and a sensation of light using the second wavelength, and a third light filter is positioned on a portion of the voltage and current gain adjustment layer that is exposed to light, to allow adjustment of the implant voltage and current gain of the device by use of a third wavelength of light.
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Citations
23 Claims
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1. A retinal implant for electrically inducing formed vision in an eye, the retinal implant comprising:
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a plurality of first layer microphotodetector pairs for receiving light incident on the eye, each first layer microphotodetector pair comprising;
a PiN microphotodetector and a NiP microphotodetector, wherein the P-portion of the PiN microphotodetector and the N-portion of the NiP microphotodetector are aligned on a first end, and the N-portion of the piN microphotodetector and the P-portion of the NiP microphotodetector are aligned on a second end; and
a common electrode in electrical communication between the P-portion and the N-portion of the first end of the microphotodetector pair;
a gain adjustment layer having a first side and a second side, the first side having a first portion electrically connected in series with the second end of at least a portion of the plurality of first layer microphotodetector pairs, and a second portion integrally formed with the first portion and extending away from the first portion, wherein the second portion is oriented to receive light incident on the eye; and
,a common electrode plane in electrical contact with the second side of the gain adjustment layer, whereby the common electrode plane serves as an electrical ground for the retinal implant. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16)
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17. A retinal implant for electrically inducing formed vision in an eye, the retinal implant comprising:
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a plurality of microphotodetector pixels, each of the plurality of microphotodetector pixels spaced apart from any adjacent microphotodetector pixels and each of the pixels embedded in a lattice-like mesh, wherein each of the microphotodetector pixels comprises;
at least one first layer microphotodetector pair for receiving light incident on the eye, each microphotodetector pair comprising;
a PiN microphotodetector and a NiP microphotodetector, wherein the P-portion of the PiN microphotodetector and the N-portion of the NiP microphotodetector are aligned on a first end, and the N-portion of the PiN microphotodetector and the P-portion of the NiP microphotodetector are aligned on a second end; and
a common electrode in electrical communication between the P-portion and the N-portion of the first end of the microphotodetector pair; and
a gain adjustment layer having a first side and a second side, the first side having a first portion electrically connected in series with the second end of at least a portion of the plurality of first layer microphotodetector pairs, and a second portion integrally formed with the first portion and extending away from the first portion, wherein the second portion is oriented to receive light incident on the eye. - View Dependent Claims (18)
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19. A retinal implant for electrically inducing formed vision in an eye, the retinal implant comprising:
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a first layer comprising a plurality of microphotodetector pairs, each microphotodetector pair comprising;
a PiN microphotodetector and a NiP microphotodetector, wherein the P-portion of the PiN microphotodetector and the N-portion of the NiP microphotodetector are aligned on a first end, and the N-portion of the PiN microphotodetector and the P-portion of the NiP microphotodetector are aligned on a second end; and
a common electrode in electrical communication between the P-portion and the N-portion of the first end of the microphotodetector pair;
a first common electrode strip in electrical contact with the N-portions of the second end of each of the plurality of PiN microphotodetectors of the microphotodetector pairs;
a second common electrode strip in electrical contact with the P-portions of the second end of each of the plurality of NiP microphotodetectors of the PiN/NiP microphotodetector pairs;
a second layer photodetector gain adjustment layer comprising a first end and a second end, the first end comprising a first portion electrically connected in series with the common electrode strips of both the N-portion and P-portion of the second end of the first layer of microphotodetector pairs, and a second portion integrally formed with the first portion extending away from the first portion and oriented to receive light incident on the eye; and
a common electrode plane for the second layer photodetector gain adjustment layer in direct electrical contact with the second end of both the first portion and the second portion of the photodetector, gain adjustment layer, the common electrode plane serving as the electrical ground of the retinal implant.
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20. An adjustable voltage and current gain microphotodetector retinal implant for electrically inducing formed vision in an eye, the retinal implant comprising:
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a first microphotodetector layer comprising at least one PiN microphotodetector, the first microphotodetector layer having a bandpass filter configured to pass visible light, and a voltage and current gain adjustment layer comprising at least one PiN photodetector, the voltage and current gain adjustment layer having a first side comprising a first portion electrically connected in series with, and covered by, a portion of the at least one PiN microphotodetector of the first microphotodetector layer, and a second portion, not covered by the first microphotodetector layer, comprising an infrared bandpass filter. - View Dependent Claims (21)
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22. An adjustable voltage and current gain microphotodetector retinal implant for electrically inducing formed vision in an eye, the retinal implant comprising:
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a first microphotodetector layer comprising at least one PiN microphotodetector, the first microphotodetector layer comprising an amorphous silicon material, wherein the first microphotodetector layer is oriented to receive light incident on the eye; and
a gain adjustment layer comprising at least on PiN photodetector, the PiN photodetector having a first side electrically connected in series with, and covered by, the at least one PiN microphotodetector of the first microphotodetector layer. - View Dependent Claims (23)
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Specification