Chamber having improved process monitoring window

• US 6,390,019 B1
• Filed: 06/11/1998
• Issued: 05/21/2002
• Est. Priority Date: 06/11/1998
• Status: Expired due to Fees

• Current Assignee: Applied Materials Incorporated
• Original Assignee: Applied Materials Incorporated
• Inventors: Grimbergen, Michael N., Qian, Xue-Yu
• Primary Examiner(s): LUND, JEFFRIE ROBERT
• Application Number:
  US09/096,728
• Time in Patent Office: 1,440 Days
• Field of Search: 118/723.R, 118/723.I, 118/723.IR, 118/723.E, 118/723.MW, 118/712, 118/713, 156/345
• US Class Current: 118/723.00R
• CPC Class Codes: H01J 37/321 the radio frequency energy being inductively coupled to the plasma
• CPC Class Codes: H01J 37/32458 Vessel
• CPC Class Codes: H01J 37/32623 Mechanical discharge control means

Abstract

A process chamber 35 for processing a substrate 30 and monitoring the process conducted on the substrate 30, comprises a support 45, a gas distributor, and an exhaust 85. The process chamber 35 has a wall comprising a window 130 that allows light to be transmitted therethrough and reduces deposition of process residue from the process gas onto the window 130 during processing of the substrate 30. In one version, the window 130 comprises a transparent plate 135 covered by an overlying mask 140 that has at least one aperture 145 extending through the mask 140 so that light can be transmitted through the aperture 145 and the transparent plate 135.

Claims

1. A process chamber capable of processing a substrate, the process chamber comprising:

(a) a support;

(b) a gas distributor;

(c) a gas energizer;

(d) a radiation transmitting portion capable of transmitting radiation to or from the process chamber during processing of a substrate;

(e) electromagnetic means for reducing deposition of process residue on the radiation transmitting portion absent a heating element for heating the radiation transmitting portion; and

(f) an exhaust,

whereby a substrate held on the support may be processed by process gas distributed by the gas distributor, energized by the gas energizer, and exhausted by the exhaust, and the electromagnetic means for reducing deposition of process residue on the radiation transmitting portion allows radiation to be transmitted through the radiation transmitting portion to monitor processing of the substrate.

2. The process chamber of claim 1 wherein the electromagnetic means for reducing deposition of process residue comprises means for limiting access of energized process gas to the radiation transmitting portion.

3. The process chamber of claim 1 wherein the electromagnetic means for reducing deposition of process residue further comprises masking means for making the energized process gas from the radiation transmitting portion.

4. The process chamber of claim 1 wherein the means for reducing deposition of process residue comprises a mask covering the radiation transmitting portion, the mask having apertures with an aspect ratio of from about 0.25:

1 to about 12;

1.

5. The process chamber of claim 1 further comprising a process monitoring system that is adapted to monitor radiation transmissions passing through the radiation transmitting portion.

6. A process chamber capable of processing a substrate, the process chamber comprising:

(a) a support;

(b) a gas distributor;

(c) a gas energizer;

(d) a window in a wall of the process chamber;

(e) a magnetic field source adapted to provide a magnetic flux across the window; and

(f) an exhaust;

whereby a substrate held on the support may be processed by an energized process gas thereby forming process residues in the process chamber, and whereby the magnetic flux across the window reduces the deposition of the process residues on the window.

7. The process chamber of claim 6 wherein the magnetic field source provides a magnetic flux having higher density across the window than across other portions of the chamber.

8. The process chamber of claim 6 wherein the magnetic field source comprises one or more magnetic poles disposed about a perimeter of the window.

9. The process chamber of claim 8 wherein the magnetic poles face one another around the perimeter of the window and comprise opposing magnetic polarities.

10. The process chamber of claim 6 wherein the magnetic field source comprises an aperture and provides a magnetic field across the aperture.

11. The process chamber of claim 6 wherein the magnetic field source comprises at least one magnet or electromagnet adjacent to the window.

12. The process chamber of claim 6 wherein the magnetic field source comprises a hole sized to allow radiation to pass through the window.

13. The process chamber of claim 6 wherein the magnetic field source is capable of providing a magnetic field component that is substantially parallel to the plane of the window.

14. The process chamber of claim 6 wherein the magnetic field source is adapted to provide a magnetic field that extends across substantially an entire surface of the window.

15. The process chamber of claim 6 wherein the magnetic field source is adapted to provide a magnetic field that terminates at about the edges of the window.

16. The process chamber of claim 6 wherein the magnetic field source is capable of providing a magnetic field of from about 10 to about 10,000 Gauss.

17. The process chamber of claim 6 further comprising a mask covering the window, the mask comprising an aperture that allows radiation to pass through.

18. The process chamber of claim 6 further comprising a process monitoring system adapted to monitor radiation transmissions passing through the window.

19. A process chamber capable of processing a substrate, the process chamber comprising:

(a) a support;

(b) a gas distributor;

(c) a gas energizer;

(d) a window in a wall of the process chamber;

(e) an electrical field source that couples electrical energy to the window; and

(f) an exhaust;

whereby a substrate held on the support may be processed by an energized process gas thereby forming process residues in the process chamber, and whereby the electrical energy coupled to the window reduces deposition of the process residues on the window.

20. The process chamber of claim 19 wherein the electrical field source is capable of electrically biasing the window.

21. The process chamber of claim 19 wherein the electrical field source is adapted to provide an electrical field that extends across a surface of the window and terminates at about the edges of the window.

22. The process chamber of claim 19 wherein the electrical field source comprises an electrode or coil adjacent to the window.

23. The process chamber of claim 22 wherein the electrode or coil provides an electrical flux having an electrical field component that is perpendicular to the plane of the window.

24. The process chamber of claim 22 wherein the process chamber further comprises an inductor antenna and the electrode comprises apertures positioned to reduce eddy currents induced by electrical energy coupled from the inductor antenna.

25. The process chamber of claim 22 wherein the electrode comprises an aperture sized to allow radiation to pass therethrough.

26. The process chamber of claim 22 wherein the electrode comprises a disc having at least one radially extending slot.

27. The process chamber of claim 19 wherein the process chamber further comprises an electrical current source capable of powering the electrical field source with D.C., A.C., or RF energy.

28. The process chamber of claim 27 wherein the electrical current source comprises an inductor coil and a tap connecting the inductor coil to the electrode.

29. The process chamber of claim 27 wherein the electrical current source biases an electrode with a voltage of from about 20 to about 4000 volts.

30. The process chamber of claim 19 further comprising a process monitoring system adapted to monitor radiation transmissions passing through the window.

31. A process chamber capable of processing a substrate, the process chamber comprising:

(a) a support;

(b) a gas distributor to provide a process gas in the chamber;

(c) a wall about the support;

(d) a gas energizer adapted to couple RF energy through the wall to energize the process gas, the gas energizer comprising at least one of an inductor antenna or process electrodes;

(e) a magnetic field source adapted to provide a magnetic flux across a portion of the wall, the magnetic flux selected to be sufficiently high to reduce a deposition of process residues on the portion of the wall; and

(f) an exhaust capable of exhausting the process gas from the chamber;

whereby a substrate held on the support may be processed by the energized process gas thereby forming the process residues in the process chamber, and whereby the magnetic flux across the wall reduces the deposition of the process residues on the wall.

32. The process chamber of claim 31 wherein the magnetic field source provides a magnetic flux having higher density across the wall than across other portions of the chamber.

33. The process chamber of claim 31 wherein the magnetic field source comprises one or more magnetic poles disposed about a portion of the wall.

34. The process chamber of claim 33 comprising magnetic poles of opposing magnetic polarities.

35. The process chamber of claim 31 wherein the magnetic field source comprises an aperture and provides a magnetic field across the aperture.

36. The process chamber of claim 31 wherein the magnetic field source comprises at least one magnet or electromagnet adjacent to the wall.

37. The process chamber of claim 31 wherein the magnetic field source comprises a hole sized to allow radiation to pass through the wall.

38. The process chamber of claim 31 wherein the magnetic field source is capable of providing a magnetic field component that is parallel to a plane of the wall.

39. The process chamber of claim 31 wherein the magnetic field source is adapted to provide a magnetic field that extends across substantially an entire surface of the wall.

40. The process chamber of claim 31 wherein the magnetic field source is capable of providing a magnetic field of from about 10 to about 10,000 Gauss.

41. The process chamber of claim 31 further comprising a mask covering a portion of the wall, the mask comprising an aperture that allows radiation to pass through.

42. The process chamber of claim 31 wherein the portion of the wall is capable of transmitting radiation to or from the chamber, and further comprising a process monitoring system adapted to monitor radiation transmissions passing through the portion of the wall.

43. A process chamber capable of processing a substrate, the process chamber comprising:

(a) a support;

(b) a gas distributor to provide a process gas in the chamber;

(c) a gas energizer to energize the process gas;

(d) a wall about the support;

(e) an electrical field source to couple electrical energy to a portion of the wall to reduce a deposition of process residues on the portion of the wall; and

(f) an exhaust capable of exhausting the process gas from the chamber;

whereby a substrate held on the support may be processed by the energized process gas thereby forming process residues in the process chamber, and whereby the electrical energy coupled to the wall reduces the deposition of the process residues on the wall.

44. The process chamber of claim 43 wherein the electrical field source electrically biases the wall.

45. The process chamber of claim 43 wherein the electric field source comprises an electrode or coil adjacent to the wall.

46. The process chamber of claim 45 wherein the electrode or coil provides an electrical flux having an electrical field component that is perpendicular to a plane of the wall.

47. The process chamber of claim 43 wherein the process chamber further comprises an antenna.

48. The process chamber of claim 47 wherein the electrical field source comprises an electrode.

49. The process chamber of claim 43 wherein the electrical field source comprises an electrode.

50. The process chamber of claim 49 wherein the electrode comprises apertures positioned to reduce eddy currents induced by electrical energy coupled from the antenna.

51. The process chamber of claim 49 wherein the electrode comprises an aperture sized to allow radiation to pass therethrough.

52. The process chamber of claim 49 wherein the electrode comprises a disc having at least one radially extending slot.

53. The process chamber of claim 43 further comprising an electrical current source capable of powering the electrical field source with D.C., A.C., or RF energy.

54. The process chamber of claim 53 wherein the electrical current source comprises a coil and a tap connecting the coil to the electrode.

55. The process chamber of claim 53 wherein the electrical current source biases an electrode with a voltage of from about 20 to about 4000 volts.

56. The process chamber of claim 43 wherein the portion of the wall is capable of transmitting radiation to or from the chamber, and further comprising a process monitoring system adapted to monitor radiation transmissions passing through the portion of the wall.

57. A process chamber capable of processing a substrate, the process chamber comprising:

(a) a support;

(b) a gas distributor;

(c) a gas energizer;

(d) a window in a wall of the process chamber;

(e) a process monitoring system adapted to monitor radiation transmissions passing through the window;

(f) a magnetic field source adapted to provide a magnetic flux across the window; and

(g) an exhaust;

whereby a substrate held on the support may be processed by an energized process gas thereby forming process residues in the process chamber, and whereby the magnetic flux across the window reduces the deposition of the process residues on the window.

58. The process chamber of claim 57 wherein the magnetic field source comprises one or more magnetic poles disposed about a perimeter of the window.

59. The process chamber of claim 57 wherein the magnetic field source comprises at least one magnet or electromagnet adjacent to the window.

60. The process chamber of claim 57 wherein the magnetic field source is adapted to provide a magnetic field that extends across substantially an entire surface of the window.

61. The process chamber of claim 57 further comprising a mask covering the window, the mask comprising an aperture that allows radiation to pass through.

62. A process chamber capable of processing a substrate, the process chamber comprising:

(a) a support;

(b) a gas distributor;

(c) a gas energizer;

(d) a window in a wall of the process chamber;

(e) a process monitoring system adapted to monitor radiation transmissions passing through the window;

(f) an electrical field source that couples electrical energy to the window; and

(g) an exhaust;

whereby a substrate held on the support may be processed by an energized process gas thereby forming process residues in the process chamber, and whereby the electrical energy coupled to the window reduces deposition of the process residues on the window.

63. The process chamber of claim 62 wherein the electrical field source is capable of electrically biasing the window.

64. The process chamber of claim 62 wherein the electrical field source comprises an electrode or coil adjacent to the window.

65. The process chamber of claim 62 wherein the electrical field source comprises an electrode comprising a disc having a radially extending slot.

66. The process chamber of claim 62 wherein the electrical field source is adapted to provide an electrical field that extends across substantially an entire surface of the window.