Method for forming polycrystalline silicon film
First Claim
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1. A semiconductor-thin-film forming method comprising:
- a step of forming a non-single-crystal semiconductor film on a substrate having an insulation surface;
a step of forming a cap film of a transparent insulating material on said semiconductor film, said cap film containing a catalyst element for accelerating crystallization of said semiconductor film;
a step of irradiating a laser beam on said semiconductor film through said cap film; and
a step of removing said cap film after said step of irradiating said laser beam.
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Abstract
In a method for forming a polycrystalline silicon (poly-Si) thin film on an inexpensive glass substrate, a cap film doped with a catalyst element is provided on an amorphous silicon (a-Si) film formed on the substrate. The a-Si film is transformed into the poly-Si film by irradiating an excimer laser beam on the a-Si film through the cap film. Thereafter, the cap film is removed from the poly-Si film together with the catalyst element precipitated therein.
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Citations
19 Claims
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1. A semiconductor-thin-film forming method comprising:
- a step of forming a non-single-crystal semiconductor film on a substrate having an insulation surface;
a step of forming a cap film of a transparent insulating material on said semiconductor film, said cap film containing a catalyst element for accelerating crystallization of said semiconductor film;
a step of irradiating a laser beam on said semiconductor film through said cap film; and
a step of removing said cap film after said step of irradiating said laser beam. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12)
- a step of forming a non-single-crystal semiconductor film on a substrate having an insulation surface;
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13. A method of making a semiconductor thin film, comprising the steps of:
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forming a cap film that is at least 10 nm thick on a non-single-crystal semiconductor film that is on a substrate having an insulation surface, the cap film being a transparent electrical insulator and containing a catalyst that accelerates crystallization of the semiconductor film;
irradiating a laser beam through the cap film onto the semiconductor film to crystallize the semiconductor film; and
removing the cap film after the irradiating step. - View Dependent Claims (14, 15)
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16. A method of making a semiconductor thin film, comprising the steps of:
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forming a silicon oxide cap film on a non-single-crystal semiconductor film that is on a substrate having an insulation surface, the silicon oxide cap film containing a catalyst that accelerates crystallization of the semiconductor film;
irradiating a laser beam through the silicon oxide cap film onto the semiconductor film to crystallize the semiconductor film; and
removing the silicon oxide cap film after the irradiating step. - View Dependent Claims (17, 18, 19)
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Specification