Method of depositing a copper seed layer which promotes improved feature surface coverage
First Claim
1. A method of providing a copper seed layer over an interior surface of a feature upon or within a semiconductor substrate, said method comprising:
- depositing said copper seed layer over said interior surface of said feature using copper species wherein at least 30 percent of said species are in the form of copper ions at the time said species contact said substrate surface, so that a continuous copper seed layer is formed.
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Abstract
A method of improving step coverage of a copper seed layer deposited over a semiconductor feature surface which is particularly useful for small size features having a high aspect ratio. Using a contact via as an example of a high aspect ratio feature, we have demonstrated that it is possible to increase the copper seed layer coverage simultaneously at both the bottom of the via and on the wall of the via . This increase is achieved by increasing the percentage of the depositing copper species which are ions. The percentage of species ionization which is necessary to obtain sufficient step coverage for the copper seed layer is a function of the aspect ratio of the feature. For features having a 0.25 μm or smaller feature size, an aspect ratio of about 3:1 requires that about 50% or more of the copper species be ions at the time of deposition on the substrate.
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Citations
24 Claims
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1. A method of providing a copper seed layer over an interior surface of a feature upon or within a semiconductor substrate, said method comprising:
- depositing said copper seed layer over said interior surface of said feature using copper species wherein at least 30 percent of said species are in the form of copper ions at the time said species contact said substrate surface, so that a continuous copper seed layer is formed.
- View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 19, 20, 21)
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11. A method of providing a complete copper fill of a semiconductor feature upon or within a semiconductor substrate, said method comprising:
- depositing a continuous copper seed layer over an interior surface of said feature using copper species wherein at least 30 percent of said species are in the form of copper ions at the time said species contact said substrate surface; and
subsequently depositing a copper fill layer over said continuous copper seed layer. - View Dependent Claims (12, 13, 14, 15, 16, 17, 18, 22, 23, 24)
- depositing a continuous copper seed layer over an interior surface of said feature using copper species wherein at least 30 percent of said species are in the form of copper ions at the time said species contact said substrate surface; and
Specification