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Method of forming silicon containing thin films by atomic layer deposition utilizing trisdimethylaminosilane

  • US 6,391,803 B1
  • Filed: 06/20/2001
  • Issued: 05/21/2002
  • Est. Priority Date: 06/20/2001
  • Status: Expired due to Term
First Claim
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1. An atomic layer deposition method of forming a solid thin film layer containing silicon comprising the steps of:

  • a) placing a substrate into a chamber;

    b) injecting a first reactant containing Si and an aminosilane into the chamber;

    c) chemisorbing a first portion of the first reactant onto the substrate and physisorbing a second portion of the first reactant onto the substrate;

    d) removing the physisorbed second portion of the first reactant from the substrate;

    e) injecting a second reactant into the chamber;

    f) chemically reacting a first portion of the second reactant with the chemisorbed first portion of the first reactant to form a silicon-containing solid on the substrate; and

    , g) removing the non-chemically reacted portion of the second reactant from the chamber.

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