Capacitor/antifuse structure having a barrier-layer electrode and improved barrier layer

• US 6,392,284 B1
• Filed: 07/15/1999
• Issued: 05/21/2002
• Est. Priority Date: 02/27/1998
• Status: Expired due to Term

• Current Assignee: Round Rock Research LLC
• Original Assignee: Micron Technology, Inc.
• Inventors: Mercaldi, Garry A., Nuttall, Michael, Thakur, Randhir P. S.
• Primary Examiner(s): Lee, Eddie
• Assistant Examiner(s): RICHARDS, NORMAN DREW
• Application Number:
  US09/353,576
• Time in Patent Office: 1,041 Days
• Field of Search: 257/529, 257/530, 257/209, 438/128, 438/129, 438/131, 438/467, 438/500
• US Class Current: 257/530
• CPC Class Codes: G11C 11/404 with one charge-transfer gate, e.g. MOS transistor, per cell
• CPC Class Codes: G11C 17/16 using electrically-fusible links
• CPC Class Codes: H01L 21/28568 the conductive layers comprising transition metals H01L21/28518 takes precedence
• CPC Class Codes: H01L 21/76888 By rendering at least a portion of the conductor non conductive, e.g. oxidation
• CPC Class Codes: H01L 28/60 Electrodes
• CPC Class Codes: H10B 12/03 Making the capacitor or connections thereto

Abstract

A semiconductor structure includes a dielectric layer having first and second opposing sides. A conductive layer is adjacent to the first side of the dielectric layer and is coupled to a first terminal, and a conductive barrier layer is adjacent to the second side of the dielectric layer and is coupled to a second terminal. The conductive barrier layer may be formed from tungsten nitride, tungsten silicon nitride, titanium silicon nitride or other barrier materials.

Claims

1. An antifuse, comprising:

a dielectric layer having a first side, a second side that is opposite the first side, and an opening that extends through the dielectric layer;

a silicon germanium layer that is adjacent to the first side of the dielectric layer; and

a conductive barrier layer that is adjacent to the second side of the dielectric layer and that contacts the silicon germanium layer through the opening in the dielectric layer.

2. The antifuse of claim 1 wherein the conductive barrier layer comprises tungsten nitride.

3. The antifuse of claim 1 wherein the conductive barrier layer comprises tungsten silicon nitride.

4. The antifuse of claim 1 wherein the conductive barrier layer comprises titanium silicon nitride.

5. The antifuse of claim 1, further comprising:

an electrode adjacent to a side of the conductive barrier layer opposite the dielectric layer; and

a silicide layer disposed between the conductive barrier layer and the electrode.

6. An antifuse, comprising:

a silicon dioxide layer having a first side, a second side that is opposite the first side, and an opening that extends through the silicon dioxide layer;

a first conductive barrier layer adjacent to the first side of the silicon dioxide layer; and

a second conductive barrier layer adjacent to the second side of the silicon dioxide layer and that contacts the first conductive barrier layer through the opening in the silicon dioxide layer.

7. The antifuse of claim 6 wherein at least one of the conductive barrier layers is selected from the group consisting titanium nitride, tungsten nitride, tungsten silicon nitride or titanium silicon nitride.

8. The antifuse of claim 6, further comprising:

an electrode adjacent to a side of at least one of the conductive barrier layers opposite the dielectric layer; and

a silicide layer disposed between the at least one of the conductive barrier layers and the electrode.

9. An antifuse, comprising:

a dielectric layer having a first side, a second side that is opposite the first side, and an opening that extends through the dielectric layer;

a conductive layer that is adjacent to the first side of the dielectric layer; and

a conductive barrier layer having a thickness of less than approximately 600 angstroms that is adjacent to the second side of the dielectric layer and that contacts the conductive layer through the opening in the dielectric layer.

10. The antifuse of claim 9 wherein the conductive barrier layer comprises tungsten nitride.

11. The antifuse of claim 9 wherein the conductive barrier layer comprises tungsten silicon nitride.

12. The antifuse of claim 9 wherein the conductive barrier layer comprises titanium silicon nitride.

13. The antifuse of claim 9, further comprising:

an electrode adjacent to a side of the conductive barrier layer opposite the dielectric layer; and

a silicide layer disposed between the conductive barrier layer and the electrode.

14. An antifuse, comprising:

a silicon dioxide layer having a first side, a second side that is opposite the first side, and an opening that extends through the silicon dioxide layer;

a conductive layer that is adjacent to the first side of the silicon dioxide layer; and

a conductive barrier layer that is adjacent to the second side of the silicon dioxide layer and that contacts the conductive layer through the opening in the silicon dioxide layer.

15. The antifuse of claim 14 wherein the conductive barrier layer comprises tungsten nitride.

16. The antifuse of claim 14 wherein the conductive barrier layer comprises tungsten silicon nitride.

17. The antifuse of claim 14 wherein the conductive barrier layer comprises titanium silicon nitride.

18. The antifuse of claim 14, further comprising:

an electrode adjacent to a side of the conductive barrier layer opposite the silicon dioxide layer; and

a silicide layer disposed between the conductive barrier layer and the electrode.

19. An antifuse, comprising:

a tantalum pentaoxide layer having a first side, a second side that is opposite the first side, and an opening that extends through the tantalum pentaoxide layer;

a conductive layer that is adjacent to the first side of the tantalum pentaoxide layer; and

a conductive barrier layer that is adjacent to the second side of the tantalum pentaoxide layer and that contacts the conductive layer through the opening in the tantalum pentaoxide layer.

20. The antifuse of claim 19 wherein the conductive barrier layer comprises tungsten nitride.

21. The antifuse of claim 19 wherein the conductive barrier layer comprises tungsten silicon nitride.

22. The antifuse of claim 19 wherein the conductive barrier layer comprises titanium silicon nitride.

23. The antifuse of claim 19, further comprising:

an electrode adjacent to a side of the conductive barrier layer opposite the silicon dioxide layer; and

a silicide layer disposed between the conductive barrier layer and the electrode.