Method of forming coaxial silicon interconnects
First Claim
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1. An apparatus for use in the testing of a circuit of a semiconductor device having a plurality of bond pads, comprising:
- a substrate having a surface including a first layer of insulation on a portion of said surface, said substrate having portions thereof for engaging said bond pads of said semiconductor device;
a plurality of raised contact members, each raised contact member positioned on said surface of said substrate for contacting at least a portion of at least a bond pad of said bond pads of said semiconductor device;
a plurality of conductive traces having at least one conductive trace connected to each raised contact member of said plurality of raised contact members;
a second layer of insulation overlying a portion of each of said plurality of conductive traces; and
a conductive layer overlying a portion of said second layer of insulation providing shielding to at least one conductive trace of said plurality of conductive traces.
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Abstract
An interconnect apparatus for testing bare semiconductor dice comprises raised contact members on a semiconductive substrate. The contact members are covered with an insulation layer and a conductive cap connected by a conductive trace to a testing circuit. The trace is covered with coaxial layers of a silicon-containing insulation and a metal for shielding the trace from “crosstalk” and other interference. An apparatus for simultaneous testing of multiple dies on a wafer has thermal expansion characteristics matching those of the semiconductor die or wafer and provides clean signals.
39 Citations
23 Claims
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1. An apparatus for use in the testing of a circuit of a semiconductor device having a plurality of bond pads, comprising:
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a substrate having a surface including a first layer of insulation on a portion of said surface, said substrate having portions thereof for engaging said bond pads of said semiconductor device;
a plurality of raised contact members, each raised contact member positioned on said surface of said substrate for contacting at least a portion of at least a bond pad of said bond pads of said semiconductor device;
a plurality of conductive traces having at least one conductive trace connected to each raised contact member of said plurality of raised contact members;
a second layer of insulation overlying a portion of each of said plurality of conductive traces; and
a conductive layer overlying a portion of said second layer of insulation providing shielding to at least one conductive trace of said plurality of conductive traces. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8)
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9. An apparatus for use in the testing of a circuit of a semiconductor device having a plurality of bond pads, comprising:
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a substrate having an insulative surface on at least a portion thereof, said substrate to overlie at least a portion of said semiconductor device;
a plurality of raised contact members positioned on said insulative surface on at least a portion of said substrate for contacting a portion of each bond pad of said plurality of bond pads of said semiconductor device, each raised contact member of said plurality of raised contact members including a projecting apex and a stop surface located adjacent to said projecting apex;
a plurality of conductive traces, at least one conductive trace of said plurality of conductive traces connected to at least one raised contact member of said plurality of raised contact members;
a second insulative layer substantially overlying each conductive trace of said plurality of conductive traces; and
a conductive layer overlying said second insulative layer and each said conductive trace of said plurality of conductive traces providing shielding to each said conductive trace. - View Dependent Claims (10, 11, 12, 13, 14, 15)
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16. An apparatus for use in the testing of a circuit of a semiconductor device having a plurality of bond pads, comprising:
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a substrate having a layer of insulating material located on at least a portion of the surface of said substrate, said substrate to overlie a portion of said semiconductor device;
a plurality of raised contact members positioned on said surface of said substrate, each raised contact member for contacting at least a portion of at least one bond pad of said semiconductor device;
a plurality of conductive traces, one conductive trace of said plurality of conductive traces connected to at least one raised contact member of said plurality of raised contact members;
a second layer of insulating material overlying each conductive trace of said plurality of conductive traces; and
a conductive layer overlying at least a portion said second layer of insulating material. - View Dependent Claims (17, 18, 19, 20, 21, 22, 23)
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Specification