Method for driving active matrix substrate and liquid crystal display device using the same

• US 6,392,623 B1
• Filed: 02/22/2000
• Issued: 05/21/2002
• Est. Priority Date: 02/23/1999
• Status: Expired due to Fees

• Current Assignee: Sharp Kabushiki Kaisha (Hon Hai Precision Industry Co., Ltd.)
• Original Assignee: Sharp Kabushiki Kaisha (Hon Hai Precision Industry Co., Ltd.)
• Inventors: Shimada, Yoshinori
• Primary Examiner(s): Lao, Lun-Yi
• Application Number:
  US09/510,624
• Time in Patent Office: 819 Days
• Field of Search: 345/87-104, 345/204, 345/208-210, 349/42, 349/45, 349/47, 349/46
• US Class Current: 345/92
• CPC Class Codes: G02F 1/136213 Storage capacitors associated with the pixel electrode
• CPC Class Codes: G02F 1/136227 Through-hole connection of the pixel electrode to the active element through an insulation layer
• CPC Class Codes: G09G 2320/0219 Reducing feedthrough effects in active matrix panels, i.e. voltage changes on the scan electrode influencing the pixel voltage due to capacitive coupling
• CPC Class Codes: G09G 2320/0247 Flicker reduction other than flicker reduction circuits used for single beam cathode-ray tubes
• CPC Class Codes: G09G 2330/04 Display protection
• CPC Class Codes: G09G 3/3648 using an active matrix G09G3/367 - G09G3/3696 take precedence

Abstract

A method is provided for driving an active matrix substrate including a plurality of signal lines provided on an insulator substrate along a first direction, a plurality of scanning lines provided along a second direction to intersect the plurality of signal lines, a plurality of pixel electrodes provided at the intersections of the plurality of signal lines and the plurality of scanning lines, and a plurality of common electrodes provided to form a storage capacitor between each common electrode and the corresponding pixel electrode, a semiconductor layer being provided between each common electrode and the corresponding pixel electrode. The method includes the step of applying a signal to each common electrode such that the depletion layer formed in the semiconductor layer has the maximum width.

Claims

1. A method for driving an active matrix substrate including a plurality of signal lines provided on an insulator substrate along a first direction, a plurality of scanning lines provided along a second direction to intersect the plurality of signal lines, a plurality of pixel electrodes provided at the intersections of the plurality of signal lines and the plurality of scanning lines, and a plurality of common electrodes provided to form a storage capacitor between each common electrode and the corresponding pixel electrode, a semiconductor layer being provided between each common electrode and the corresponding pixel electrode,

the method comprising the step of:

applying a signal to each common electrode such that the depletion layer formed in the semiconductor layer has the maximum width.

2. A method according to claim 1, wherein a common signal line for supplying a signal to the common electrode is provided along the second direction, and said semiconductor layer exists in the intersection of the common signal line and the signal line.

3. A method for driving an active matrix substrate according to claim 1, wherein the following expression is satisfied:

4. A liquid crystal display device comprising:

an active matrix substrate;

a counter substrate including a counter electrode; and

a liquid crystal layer sandwiched by the active matrix substrate and the counter substrate,

the active matrix substrate including;

a plurality of signal lines provided on an insulator substrate along a first direction;

a plurality of scanning lines provided along a second direction to intersect the plurality of signal lines;

plurality of pixel electrodes provided at the intersections of the plurality of signal lines and the plurality of scanning lines; and

a plurality of common electrodes provided to form a storage capacitor between each common electrode and the corresponding pixel electrode, a semiconductor layer being provided between each common electrode and the corresponding pixel electrode,

wherein a signal is applied to the common electrode such that the depletion layer formed in the semiconductor layer has the maximum width.