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High speed semiconductor optical modulator and fabricating method thereof

  • US 6,392,781 B1
  • Filed: 02/04/2000
  • Issued: 05/21/2002
  • Est. Priority Date: 09/15/1999
  • Status: Expired due to Term
First Claim
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1. A high speed semiconductor optical modulator, the optical modulator formed by stacking an n-type light-wave guiding layer, a light absorbing layer, a p-type light-wave guiding layer, a p-type clad layer, and a p-type ohmic contact layer on a substrate successively, the optical modulator having a ridge structure wherein the optical modulator is an electric-field absorbing type, and wherein width of the light absorbing layer is less than that of the p-type ohmic contact layer.

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