High speed semiconductor optical modulator and fabricating method thereof

• US 6,392,781 B1
• Filed: 02/04/2000
• Issued: 05/21/2002
• Est. Priority Date: 09/15/1999
• Status: Expired due to Term

• Current Assignee: Intellectual Discovery Co., Ltd.
• Original Assignee: Electronics and Telecommunications Research Institute
• Inventors: Kim, Je Ha, Park, Chan Yong, Pyun, Kwang Eui
• Primary Examiner(s): Ben, Loha
• Application Number:
  US09/498,610
• Time in Patent Office: 837 Days
• Field of Search: 359/245, 359/246, 359/247, 359/248, 359/254, 359/260, 359/276, 257/14, 257/80, 257/94, 257/96, 257/98, 257/101, 257/458, 385/1, 385/2, 385/3, 385/8, 385/131
• US Class Current: 359/248
• CPC Class Codes: B82Y 20/00 Nanooptics, e.g. quantum optics or photonic crystals
• CPC Class Codes: G02F 1/01708 in an optical wavequide structure

Abstract

The present invention relates to an electrical field absorbing semiconductor optical modulator, more particularly, to a high speed semiconductor optical modulator and a fabricating method thereof. The present invention includes a high speed semiconductor optical modulator, the optical modulator formed by stacking an n-type light-wave guiding layer, a light absorbing layer, a p-type light-wave guiding layer, a p-type clad layer, and a p-type ohmic contact layer on a substrate successively, the optical modulator having a ridge structure wherein the optical modulator is an electric-field absorbing type, and wherein width W3 of the light absorbing layer is less than the width W1 of the p-type ohmic contact layer. Accordingly, the present invention enables to provide high speed optical modulation of tens of giga rate of which modulating characteristics are excellent by reducing contact resistance and capacitance, which are the major problems of ruining the characteristics of an optical modulator, simultaneously.

Claims

1. A high speed semiconductor optical modulator, the optical modulator formed by stacking an n-type light-wave guiding layer, a light absorbing layer, a p-type light-wave guiding layer, a p-type clad layer, and a p-type ohmic contact layer on a substrate successively, the optical modulator having a ridge structure wherein the optical modulator is an electric-field absorbing type, and wherein width of the light absorbing layer is less than that of the p-type ohmic contact layer.

2. The high speed semiconductor optical modulator according to claim 1, wherein width of the n-type light-wave guiding layer, p-type light-wave guiding layer, and p-type clad layer are identical with one another and wherein the width of the n-type light-wave guiding layer, p-type light-wave guiding layer, and p-type clad layer is greater than or equal to the width of the p-type ohmic contact layer.

3.The high speed semiconductor optical modulator according to claim 1, wherein the width of the light absorbing layer is 1˜

3 μ

m.

4.The high speed semiconductor optical modulator according to claim 1, wherein the width of the p-type ohmic layer is 5˜

10 μ

m.

3. A method of fabricating a high speed semiconductor optical modulator, comprising the steps of:

a first step of forming a ridge structure by stacking an n-type light-wave guiding layer, a light absorbing layer, a p-type light-wave guiding layer, a p-type clad layer, and a p-type ohmic layer on a substrate successively;

a second step of etching the p-type ohmic contact layer to have a width W1;

a third step of etching vertically the n-type light-wave guiding layer, the light absorbing layer, the p-type light-wave guiding layer, the p-type clad layer, and the p-type ohmic layer to have width W2; and

a fourth step of side-etching the light absorbing layer to have a width W3 which is narrower than the width W1.

5. The method of fabricating a high speed semiconductor optical modulator according to claim 5, wherein the fourth step is carried out during a predetermined time enough to etch completely a test pattern of which width is equal to a difference between the widths W2 and W3.

4. The method of fabricating a high speed semiconductor optical modulator according to claim 5, further comprising the steps of:

a fifth step of forming a dielectric at a side of the ridge structure;

a sixth step of forming a dielectric film on the p-type clad layer while the p-type ohmic contact layer is exposed; and

a seventh step of forming a p-type electrode on the p-type ohmic contact layer and an n-type electrode beneath the substrate.

6. The method of fabricating a high speed semiconductor optical modulator according to claim 5, wherein the width W2 is equal to or wider than the width of W1 of the p-type ohmic contact layer.

7. The method of fabricating a high speed semiconductor optical modulator according to claim 5, wherein the width W3 of the light absorbing layer is 1˜

3 μ

m.

8. The method of fabricating a high speed semiconductor optical modulator according to claim 5, wherein the width W1 of the p-type ohmic contact layer is 5˜

10 μ

m.