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Method of fabricating reflection-mode EUV diffraction elements

  • US 6,392,792 B1
  • Filed: 12/05/2000
  • Issued: 05/21/2002
  • Est. Priority Date: 12/05/2000
  • Status: Expired due to Term
First Claim
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1. A method of fabricating an EUV diffraction element comprising:

  • (a) forming an etch stack comprising alternating layers of first and second materials on a substrate surface where the two materials can provide relative etch selectivity;

    (b) creating a relief profile in the etch stack wherein the relief profile has a defined contour and the relief profile has at least three levels wherein each level is formed by;

    (i) forming a resist film on top of the stack;

    (ii) exposing one or more patterned regions and developing to uncover one or more regions of the stack;

    (iii) etching one layer of the stack where uncovered of resist; and

    (iv) repeating steps (i) through (iii) at least once up to the number of stack layers available; and

    (c) depositing a multilayer reflection film over the relief profile wherein the film has an outer contour that substantially matches that of the relief profile.

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