Circuit for eliminating idle cycles in a memory device

• US 6,392,955 B2
• Filed: 03/12/2001
• Issued: 05/21/2002
• Est. Priority Date: 09/16/1997
• Status: Expired due to Term

• Current Assignee: Micron Technology, Inc.
• Original Assignee: Micron Technology, Inc.
• Inventors: Pawlowski, J. Thomas
• Primary Examiner(s): Nelms, David
• Assistant Examiner(s): Lam, David
• Application Number:
  US09/804,010
• Publication Number:
  US 20020009014A1
• Time in Patent Office: 435 Days
• Field of Search: 365/230.06, 365/230.08, 365/230.02, 365/189.01, 365/189.05, 365/189.02, 365/189.04, 365/230.05, 395/375
• US Class Current: 365/189.15
• CPC Class Codes: G11C 11/413 Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction
• CPC Class Codes: G11C 7/1039 using pipelining techniques, i.e. using latches between functional memory parts, e.g. row/column decoders, I/O buffers, sense amplifiers
• CPC Class Codes: G11C 7/1078 Data input circuits, e.g. write amplifiers, data input buffers, data input registers, data input level conversion circuits
• CPC Class Codes: G11C 7/1087 Data input latches

Abstract

A data input circuit including a first input register, a second input register, and a write driver connected to the second input register. The first and second input registers are preferably series-connected. In the preferred embodiment, a multiplexer selectively connects one of the first and second input registers to the write driver. The input circuit may be embodied in a memory device and in memory systems.

Claims

1. A memory device, comprising:

a memory array;

an address circuit coupled to the memory array, wherein the address circuit includes;

an address register;

a burst logic coupled to the address register;

a first write address register coupled to the burst logic;

a second write address register coupled to the first write address register;

a first compare circuit coupled to the address register and the first write address register;

a second compare circuit coupled to the address register and the second write address register; and

a first selective connector coupled to the second write address register and the memory array; and

a read circuit coupled to the memory array;

a write circuit coupled to the memory array, wherein the write circuit includes;

a first data input register;

a second data input register coupled to the first data input register;

a selective connector coupled to the first data input register and the second data input register; and

a write driver coupled to the selective connector; and

a control circuit coupled to the address circuit, the read circuit, and the write circuit.

2. The memory device of claim 1, wherein the address register includes a first input terminal coupled to an address bus, and an output terminal coupled to the first compare circuit, the second compare circuit, and the burst logic.

3. The memory device of claim 1, wherein the burst logic includes an input terminal coupled to the address register, and an output terminal coupled to the first write address register and the first selective connector.

4. The memory device of claim 1, wherein the first write address register includes an input terminal coupled to the burst logic, and an output terminal coupled to the first compare circuit and the second write address register.

5. The memory device of claim 1, wherein the second write address register includes an input terminal coupled to the first write address register, and an output terminal coupled to the first selective connector.

6. The memory device of claim 1, wherein the first selective connector includes a first input terminal coupled to the burst logic, a second input terminal coupled to the second write address register, and an output terminal coupled to the memory array.

7. A memory device, comprising:

a memory array;

an address circuit coupled to the memory array;

a read circuit coupled to the memory array, wherein the read circuit includes;

a sense amplifier coupled to the memory array;

a first selective connector coupled to the sense amplifier;

an output register coupled to the first selective connector;

a second selective connector coupled to the output register; and

an output buffer coupled to the second selective connector; and

a write circuit coupled to the memory array, wherein the write circuit includes;

a first data input register;

a second data input register coupled to the first data input register;

a selective connector coupled to the first data input register and the second data input register; and

a write driver coupled to the selective connector; and

a control circuit coupled to the address circuit, the read circuit, and the write circuit.

8. The memory device of claim 7, wherein the sense amplifier includes an input terminal coupled to the memory array and an output terminal coupled to the first selective connector.

9. The memory device of claim 7, wherein the first selective connector includes a first input terminal coupled to the sense amplifier, a second input terminal coupled to the selective connector, a control terminal coupled to the address circuit and the control circuit, and an output terminal coupled to the output register.

10. The memory device of claim 7, wherein the output register includes an input terminal coupled to the first selective connector, and an output terminal coupled to the second selective connector.

11. The memory device of claim 7, wherein the second selective connector includes a first input terminal coupled to the output register, a second input terminal coupled to the first data input register, a control terminal coupled to the control circuit, and an output terminal coupled to the output buffer.

12. The memory device of claim 7, wherein the output buffer includes an input terminal coupled to the second selective connector, and an output terminal coupled to a data bus.

13. The memory device of claim 7, wherein the first selective connector includes a plurality of first selective connectors.

14. The memory device of claim 7, wherein the second selective connector includes a plurality of second selective connectors.

15. A memory device, comprising:

a memory array;

an address circuit coupled to the memory array;

a read circuit coupled to the memory array;

a write circuit coupled to the memory array, wherein the write circuit includes;

a first data input register;

a second data input register coupled to the first data input register;

a selective connector coupled to the first data input register and the second data input register; and

a write driver coupled to the selective connector; and

a control circuit coupled to the address circuit, the read circuit, and the write circuit, wherein the control circuit includes;

first and second input enable registers, wherein the first and second input enable registers are coupled to the write circuit;

first and second read enable registers, wherein the first and second read enable registers are coupled to the read circuit;

an output bypass register coupled to the second input enable register and the first read enable register; and

a write register coupled to the write circuit.

16. The memory device of claim 15, wherein the first input enable register includes an output terminal coupled to the write driver and the second input enable register.

17. The memory device of claim 15, wherein the second input enable register includes an input terminal coupled to the first input enable register, and an output terminal coupled to the first data input register and the output bypass register.

18. The memory device of claim 15, wherein the first read enable register includes an output terminal coupled to second read enable register and the read circuit.

19. The memory device of claim 15, wherein the second read enable register includes an input terminal coupled to the first read enable register, and an output terminal coupled to the read circuit.

20. The memory device of claim 15, wherein the output bypass register includes an input terminal coupled to the second input enable register and the first read enable register, and an output terminal coupled to the read circuit.

21. The memory device of claim 15, wherein the write register includes an output terminal coupled to the selective connector.

22. A memory device, comprising:

a memory array;

an address circuit coupled to the memory array;

a read circuit coupled to the memory array;

a write circuit coupled to the memory array, wherein the write circuit includes;

a first data input register;

a second data input register coupled to the first data input register;

a selective connector coupled to the first data input register and the second data input register; and

a write driver coupled to the selective connector; and

a control circuit coupled to the address circuit, the read circuit, and the write circuit, wherein the control circuit includes;

first and second input enable registers, wherein the first and second input enable registers are coupled to the write circuit;

first and second read enable registers, wherein the first and second read enable registers are coupled to the read circuit;

an output bypass register coupled to the second input enable register and the first read enable register;

a write register coupled to the write circuit; and

a byte write circuit coupled to the write circuit.

23. The memory device of claim 22, wherein the byte write circuit includes first, second, and third byte write registers, wherein the third byte write register is coupled to the write circuit, the second byte write register is coupled to the third byte write register, and the first byte write register is coupled to the second byte write register.

24. The memory device of claim 23, wherein the first byte write register includes an output terminal coupled to the second byte write register.

25. The memory device of claim 23, wherein the second byte write register includes an input terminal coupled to the first byte write register, and an output terminal coupled to the third byte write register.

26. The memory device of claim 23, wherein the third byte register includes an input terminal coupled to the second byte register, and an output terminal coupled to the write driver.

27. The memory device of claim 23, wherein the byte write circuit includes a plurality of byte write circuits coupled to the write circuit.