Microelectromechanical dual-mass resonator structure

• US 6,393,913 B1
• Filed: 02/08/2000
• Issued: 05/28/2002
• Est. Priority Date: 02/08/2000
• Status: Expired due to Term

• Current Assignee: National Technology & Engineering Solutions Of Sandia LLC (Honeywell International Inc.)
• Original Assignee: Sandia Corporation (Martin Marietta Corporation)
• Inventors: Dyck, Christopher W., Allen, James J., Huber, Robert J.
• Primary Examiner(s): CHAPMAN JR, JOHN E
• Application Number:
  US09/500,120
• Time in Patent Office: 840 Days
• Field of Search: 73/504.12,504.13,504.14,504.15,504.16 333/186
• US Class Current: 73/504.12
• CPC Class Codes: G01P 15/0802 Details
• CPC Class Codes: G01P 15/097 by vibratory elements
• CPC Class Codes: G01P 15/125 by capacitive pick-up
• CPC Class Codes: G01P 15/131 with electrostatic counterbalancing means
• CPC Class Codes: G01P 2015/0814 for translational movement of the mass, e.g. shuttle type
• CPC Class Codes: H03H 2009/02496 Horizontal, i.e. parallel to the substrate plane
• CPC Class Codes: H03H 2009/02511 Vertical, i.e. perpendicular to the substrate plane
• CPC Class Codes: H03H 9/2405 of microelectro-mechanical resonators

Abstract

A dual-mass microelectromechanical (MEM) resonator structure is disclosed in which a first mass is suspended above a substrate and driven to move along a linear or curved path by a parallel-plate electrostatic actuator. A second mass, which is also suspended and coupled to the first mass by a plurality of springs is driven by motion of the first mass. Various modes of operation of the MEM structure are possible, including resonant and antiresonant modes, and a contacting mode. In each mode of operation, the motion induced in the second mass can be in the range of several microns up to more than 50 μm while the first mass has a much smaller displacement on the order of one micron or less. The MEM structure has applications for forming microsensors that detect strain, acceleration, rotation or movement.

Claims

1. A microelectromechanical (MEM) structure, comprising:

(a) a parallel-plate electrostatic actuator which further comprises a plurality of stationary electrodes formed on a substrate and a first mass suspended above the substrate to form a moveable electrode, with the first mass moving along a path in a plane parallel to the plane of the substrate and in a direction perpendicular to the length of the stationary electrodes in response to an actuation voltage applied between the stationary electrodes and the first mass; and

(b) a second mass suspended above the substrate and coupled to the first mass by a plurality of springs, with the second mass being driven by motion of the first mass to move along the same path.

2. The MEM structure of claim 1 wherein each stationary electrode is located within a window formed through the first mass.

3. The MEM structure of claim 1 wherein the second mass is located within a window formed through the first mass.

4. The MEM structure of claim 1 wherein the second mass is located proximate to the first mass.

5. The MEM structure of claim 1 wherein the first mass is located within a window formed through the second mass.

6. The MEM structure of claim 1 wherein motion of the first and second masses is oscillatory, and the second mass is driven near an antiresonance frequency by the oscillatory motion of the first mass.

7. The MEM structure of claim 1 wherein motion of the first and second masses is oscillatory, and the second mass is driven near a resonant frequency by the oscillatory motion of the first mass.

8. The MEM structure of claim 1 wherein the motion of the first and second masses is oscillatory, and the first mass is driven to contact at least a portion of the stationary electrodes.

9. The MEM structure of claim 1 wherein an extent of motion of the second mass is larger than the extent of motion of the first mass upon actuation of the first mass.

10. The MEM structure of claim 1 wherein the substrate comprises silicon.

11. The MEM structure of claim 1 wherein the first and second masses comprise polycrystalline silicon.

12. The MEM structure of claim 1 wherein the actuation voltage is cyclic.

13. The MEM structure of claim 12 wherein the actuation voltage is sinusoidal.

14. The MEM structure of claim 1 wherein the actuation voltage is ≦

15 volts.

15. The MEM structure of claim 1 further including a position-sensing electrode located on the substrate below the second mass.

16. The MEM structure of claim 15 further including a ground plane located on the substrate below the first mass.

17. A microelectromechanical (MEM) structure, comprising:

(a) a substrate;

(b) a first mass suspended above the substrate and having a plurality of windows formed therethrough;

(c) a plurality of stationary electrodes formed on the substrate with each stationary electrode being located within one of the windows in the first mass, the stationary electrodes acting in combination with the first mass to form a parallel-plate electrostatic actuator to electrostatically move the first mass relative to the substrate along a path in response to an actuation voltage provided between the stationary electrodes and the first mass;

(d) a second mass coupled to the first mass through a plurality of springs, with the second mass being driven to move along the same path in response to motion of the first mass; and

(e) a position-sensing electrode located on the substrate below the second mass.

18. The MEM structure of claim 17 further including a ground plane formed on the substrate underneath the first mass.

19. The MEM structure of claim 17 wherein an extent of motion of the second mass is larger than the extent of motion of the first mass upon actuation of the first mass.

20. The MEM structure of claim 17 wherein motion of the first and second masses is oscillatory.

21. The MEM structure of claim 20 wherein the actuation voltage is cyclic.

22. The MEM structure of claim 20 further including a voltage source connected to the parallel-plate electrostatic actuator to drive the second mass to oscillate near an antiresonance frequency by the oscillatory motion of the first mass.

23. The MEM structure of claim 20 further including a voltage source connected to the parallel-plate electrostatic actuator to drive the second mass to oscillate near a resonance frequency by the oscillatory motion of the first mass.

24. The MEM structure of claim 20 further including a voltage source connected to the parallel-plate electrostatic actuator to drive the first mass to contact at least a portion of the stationary electrodes.

25. The MEM structure of claim 17 wherein the first mass surrounds the second mass.

26. The MEM structure of claim 17 wherein the second mass surrounds the first mass.

27. The MEM structure of claim 17 wherein the second mass is located proximate to the first mass.

28. The MEM structure of claim 17 wherein the first and second masses are formed from at least one layer of polycrystalline silicon.

29. The MEM structure of claim 17 wherein the actuation voltage is ≦

15 volts.

30. A microelectromechanical (MEM) structure, comprising:

(a) a parallel-plate electrostatic actuator formed on a substrate and comprising a first mass suspended above the substrate and having a plurality of windows formed therethrough, and a plurality of stationary electrodes formed on the substrate at the locations of the windows in the first mass, the stationary electrodes acting in combination with the first mass to electrostatically move the first mass along a path in response to an actuation voltage provided between the stationary electrodes and the first mass; and

(b) a second mass located within one of the windows in the first mass, with the second mass being coupled to the first mass through a plurality of springs and further being driven to move along the same path as the first mass in response to motion of the first mass.

31. The MEM structure of claim 30 further including a position-sensing electrode formed on the substrate below the second mass.

32. The MEM structure of claim 31 further including a ground plane formed on the substrate below the first mass.

33. The MEM structure of claim 30 wherein the motion of the first mass is oscillatory, and the second mass is urged by the motion of the first mass to oscillate in a mode selected from the group consisting of a resonant mode, an antiresonant mode, and a contacting mode.

34. The MEM structure of claim 30 wherein the substrate comprises silicon.

35. The MEM structure of claim 30 wherein the first and second masses comprise polycrystalline silicon.

36. The MEM structure of claim 30 wherein the second mass has a range of motion that is larger than the range of motion of the first mass.

37. The MEM structure of claim 30 wherein each spring coupling the first mass to the second mass comprises a folded spring.