Method of producing semiconductor light-emitting element
First Claim
1. A method of producing semiconductor light-emitting elements, said method comprising the steps of:
- providing a wafer substrate comprising GaP, having a top surface and a bottom surface;
epitaxially growing on said top surface of said substrated semiconductor layered structure including an n-layer and a p-type layer comprising GaP, said n-type layer and said p-type layer forming a light-emitting layer;
forming top electrodes on said semiconductor layered structure each over a portion of an area corresponding to one of chips into which said substrate is to be later divided, each of said top electrodes being free of Ti and of a three-layer structure consisting of a contact metal layer which makes an ohmic contact with the GaP of said semiconductor layered structure, a Mo layer on said contact metal layer and an Au layer on said Mo layer;
forming a bottom electrode on said bottom surface of said substrate;
dicing said wafer substrate into said chips; and
thereafter carrying out a surface-roughening process on externally exposed portions of said semiconductor layered structure by means of hydrochloric acid.
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Abstract
Semiconductor light-emitting elements are produced by providing a wafer substrate of GaP, epitaxially growing on this substrate a semiconductor layered structure including an n-type layer and a p-type layer of GaP for providing a light-emitting layer, forming top electrodes on the semiconductor layered structure each over a portion of the area corresponding to one of the chips into which the substrate is to be later divided, forming a bottom electrode on the bottom surface of the substrate, dicing the wafer substrate into the individual chips, and thereafter carrying out a surface-roughening process on externally exposed portions of the semiconductor structure by means of hydrochloric acid. Each of the top electrodes is of a three-layer structure with a contact metal layer which may be of an alloy of Au and makes an ohmic contact with the GaP of the semiconductor layered structure, a Mo layer on the contact metal layer and an Au layer on the Mo layer.
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Citations
18 Claims
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1. A method of producing semiconductor light-emitting elements, said method comprising the steps of:
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providing a wafer substrate comprising GaP, having a top surface and a bottom surface;
epitaxially growing on said top surface of said substrated semiconductor layered structure including an n-layer and a p-type layer comprising GaP, said n-type layer and said p-type layer forming a light-emitting layer;
forming top electrodes on said semiconductor layered structure each over a portion of an area corresponding to one of chips into which said substrate is to be later divided, each of said top electrodes being free of Ti and of a three-layer structure consisting of a contact metal layer which makes an ohmic contact with the GaP of said semiconductor layered structure, a Mo layer on said contact metal layer and an Au layer on said Mo layer;
forming a bottom electrode on said bottom surface of said substrate;
dicing said wafer substrate into said chips; and
thereafter carrying out a surface-roughening process on externally exposed portions of said semiconductor layered structure by means of hydrochloric acid. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18)
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Specification