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Method of producing semiconductor light-emitting element

  • US 6,395,572 B1
  • Filed: 03/03/2000
  • Issued: 05/28/2002
  • Est. Priority Date: 04/15/1999
  • Status: Expired due to Term
First Claim
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1. A method of producing semiconductor light-emitting elements, said method comprising the steps of:

  • providing a wafer substrate comprising GaP, having a top surface and a bottom surface;

    epitaxially growing on said top surface of said substrated semiconductor layered structure including an n-layer and a p-type layer comprising GaP, said n-type layer and said p-type layer forming a light-emitting layer;

    forming top electrodes on said semiconductor layered structure each over a portion of an area corresponding to one of chips into which said substrate is to be later divided, each of said top electrodes being free of Ti and of a three-layer structure consisting of a contact metal layer which makes an ohmic contact with the GaP of said semiconductor layered structure, a Mo layer on said contact metal layer and an Au layer on said Mo layer;

    forming a bottom electrode on said bottom surface of said substrate;

    dicing said wafer substrate into said chips; and

    thereafter carrying out a surface-roughening process on externally exposed portions of said semiconductor layered structure by means of hydrochloric acid.

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