Method for fabricating a inductor of low parasitic resistance and capacitance
DCFirst Claim
1. A method for fabricating an inductor, comprising the steps of:
- forming a first dielectric layer on a silicon substrate and forming a first metal wire on the first dielectric layer, wherein the first metal wire is in contact with an active element formed on the silicon substrate;
forming a second dielectric layer on the resulting structure and forming an opening exposing the first metal wire;
forming a second metal wire which is electrically connected with the first metal wire;
forming a spiral dielectric pattern on the second metal wire; and
etching the second metal wire using the spiral dielectric pattern as an etching mask, thereby forming a spiral metal wire, whereby a metal corrosion is prevented by using the spiral dielectric pattern as the etching mask.
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Abstract
The present invention relates to a method for fabricating an inductor and, more particularly, to a method for fabricating a spiral inductor used in a monolithic microwave integrated circuit on a silicon substrate using semiconductor fabrication processes. The method for fabricating an inductor, comprising the steps of: forming a first dielectric layer on a silicon substrate and forming a first metal wire on the first dielectric layer, wherein the first metal wire is in contact with an active element formed on the silicon substrate; and alternatively forming dielectric layers and metal layers, wherein the metal layers are electrically connected with an upper metal wire and a lower metal wire and wherein the metal layers are patterned using the dielectric layers as etching mask, whereby a metal corrosion is prevented by using the spiral dielectric pattern as the etching mask.
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Citations
14 Claims
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1. A method for fabricating an inductor, comprising the steps of:
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forming a first dielectric layer on a silicon substrate and forming a first metal wire on the first dielectric layer, wherein the first metal wire is in contact with an active element formed on the silicon substrate;
forming a second dielectric layer on the resulting structure and forming an opening exposing the first metal wire;
forming a second metal wire which is electrically connected with the first metal wire;
forming a spiral dielectric pattern on the second metal wire; and
etching the second metal wire using the spiral dielectric pattern as an etching mask, thereby forming a spiral metal wire, whereby a metal corrosion is prevented by using the spiral dielectric pattern as the etching mask. - View Dependent Claims (2, 3, 4, 5, 6)
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7. A method for fabricating an inductor, comprising the steps of:
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forming a first dielectric layer on a silicon substrate and forming a first metal wire on the first dielectric layer, wherein the first metal wire is in contact with an active element formed on the silicon substrate;
forming a second dielectric layer on the resulting structure and forming a first opening and recesses exposing the first metal wire;
forming a second metal wire which is electrically connected with the first metal wire;
forming a first spiral dielectric pattern on the second metal wire;
etching the second metal wire using the first spiral dielectric pattern as an etching mask, thereby forming a first spiral metal wire;
forming a third dielectric layer on the resulting structure and patterning the third dielectric layer to expose the second metal wire through a second opening and recesses;
forming a third metal wire which is electrically connected with the second metal wire;
forming a second spiral dielectric pattern on the third metal wire; and
etching the third metal wire using the second spiral dielectric pattern as an etching mask, thereby forming a second spiral metal wire. - View Dependent Claims (8, 9, 10)
depositing a dielectric layer on the resulting structure; and
forming a metal wire on the dielectric layer, being electrically connected with the lower metal wire.
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9. The method in accordance with claim 7, wherein the first and second spiral dielectric patterns are one of a silicon oxide layer, a silicon nitride layer and a silicon oxide/silicon nitride layer.
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10. The method in accordance with claim 7, wherein the method further comprises a step of reflowing the first to third metal wires.
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11. A method for fabricating an inductor, comprising the steps of:
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forming a first dielectric layer on a silicon substrate and forming a first metal wire on the first dielectric layer, wherein the first metal wire is in contact with an active element formed on the silicon substrate;
forming a second dielectric layer on the resulting structure and forming an opening exposing the first metal wire;
forming a second metal wire which is electrically connected with the first metal wire;
forming a first spiral dielectric pattern on the second metal wire;
etching the second metal wire using the first spiral dielectric pattern as an etching mask, thereby forming a first spiral metal wire;
forming a third dielectric layer on the resulting structure and patterning the third dielectric layer to expose the second metal wire through an opening;
forming a third metal wire which is electrically connected with the second metal wire;
forming a second spiral dielectric pattern on the third metal wire; and
etching the third metal wire using the second spiral dielectric pattern as an etching mask, thereby forming a second spiral metal wire. - View Dependent Claims (12, 13)
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14. A method for fabricating an inductor, comprising the steps of:
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forming a first dielectric layer on a silicon substrate and forming a first metal wire on the first dielectric layer, wherein the first metal wire is in contact with an active element formed on the silicon substrate; and
alternatively forming dielectric layers and metal layers, wherein the metal layers are electrically connected with an upper metal wire and a lower metal wire and wherein the metal layers are patterned using the dielectric layers as etching mask.
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Specification