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Trench MOS device and termination structure

  • US 6,396,090 B1
  • Filed: 09/22/2000
  • Issued: 05/28/2002
  • Est. Priority Date: 09/22/2000
  • Status: Active Grant
First Claim
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1. A termination structure for trench MOS devices, said termination structure comprising:

  • a semiconductor substrate having a plurality of trench MOS devices spaced from each other formed in an active region of said semiconductor substrate;

    a trench termination formed from a boundary of said active region extended to an edge of said semiconductor substrate;

    a MOS gate formed on a sidewall adjacent said boundary;

    a termination structure oxide layer formed on said trench termination having a covering range from a portion of said MOS gate extended to said edge;

    a first electrode formed on a backside surface of said semiconductor substrate; and

    a second electrode formed atop said active region, an exposed portion of said MOS gate, and extended to cover a portion of said termination structure oxide layer.

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