×

Magneto-resistive memory having sense amplifier with offset control

  • US 6,396,733 B1
  • Filed: 07/17/2000
  • Issued: 05/28/2002
  • Est. Priority Date: 07/17/2000
  • Status: Expired due to Term
First Claim
Patent Images

1. A magneto-resistive memory, comprising:

  • magneto-resistive memory means having a first magneto-resistive bit with a first end and a second end and a second magneto-resistive bit with a first end and a second end, the first end of the first magneto-resistive bit is coupled to a first bit line and the first end of the second magneto-resistive bit is coupled to a second bit line, the second end of the first magneto-resistive bit and the second end of the second magneto-resistive bit are selectively coupled to a predetermined reference voltage via a switching means;

    current providing means for providing current to the first and second bit lines;

    sensing means for sensing a differential voltage signal between the first and second bit lines;

    amplifier means having an input, an output and offset cancellation, the offset cancellation of the amplifier means is controlled at least in part by one or more switches, the amplifier means providing an output signal;

    providing means for providing the voltage signal of the sensing means to the input of the amplifier means;

    control means for enabling the one or more switches of the amplifier means to enable the offset cancellation, and for subsequently disabling the one or more switches for disabling the offset cancellation, the control means also enabling the switching means of the magneto-resistive memory means; and

    storing means for storing the output signal of the amplifier means after the one or more switches of the amplifier means are disabled.

View all claims
  • 10 Assignments
Timeline View
Assignment View
    ×
    ×