High voltage MOSFET with geometrical depletion layer enhancement

• US 6,400,003 B1
• Filed: 12/02/1999
• Issued: 06/04/2002
• Est. Priority Date: 12/02/1998
• Status: Expired due to Fees

• Current Assignee: Koninklijke Philips Electronics N.V. (Koninklijke Philips N.V.)
• Original Assignee: Koninklijke Philips Electronics N.V. (Koninklijke Philips N.V.)
• Inventors: Huang, Eddie
• Primary Examiner(s): Flynn, Nathan
• Assistant Examiner(s): DICKEY, THOMAS L
• Application Number:
  US09/453,423
• Time in Patent Office: 915 Days
• Field of Search: 253/653, 257/330, 257/339, 257/141, 257/336
• US Class Current: 257/653
• CPC Class Codes: H01L 29/0619 with a supplementary region doped oppositely to or in rectifying contact with the semiconductor containing or contacting region, e.g. guard rings with PN or Schottky junction
• CPC Class Codes: H01L 29/0634 Multiple reduced surface field (multi-RESURF) structures, e.g. double RESURF, charge compensation, cool, superjunction (SJ), 3D-RESURF, composite buffer (CB) structures
• CPC Class Codes: H01L 29/0696 of cellular field-effect devices, e.g. multicellular DMOS transistors or IGBTs
• CPC Class Codes: H01L 29/1095 Body region, i.e. base region, of DMOS transistors or IGBTs cell layout H01L29/0696
• CPC Class Codes: H01L 29/4238 characterised by the surface lay-out
• CPC Class Codes: H01L 29/7809 having both source and drain contacts on the same surface, i.e. Up-Drain VDMOS transistors
• CPC Class Codes: H01L 29/7813 with trench gate electrode, e.g. UMOS transistors trench gate electrodes per se H01L29/4236
• CPC Class Codes: H01L 29/7824 with a substrate comprising an insulating layer, e.g. SOI-LDMOS transistors
• CPC Class Codes: H01L 29/7825 with trench gate electrode trench gate electrodes per se H01L29/4236
• CPC Class Codes: H01L 29/8083 Vertical transistors SIT H01L29/7722

Abstract

In a field-effect semiconductor device, for example a power MOSFET, a body portion separates a channel-accommodating region from a drain region at a surface of a semiconductor body. This body portion includes a drift region which serves for current flow of charge carriers of a first conductivity type from the conduction channel to the drain region, in a conducting mode of the device. Instead of being a single region, the body portion also includes field-relief regions of the second conductivity type, which are depleted together with the drift region in a voltage blocking mode of the device to provide a voltage-carrying space-charge region. The drain region extends at least partially around the body portion at the surface, and the relief regions are located radially in this body portion.

Claims

1. A field-effect semiconductor device comprising a semiconductor body including a channel-accommodating region of a second conductivity type between source and drain regions of an opposite first conductivity type, wherein a body portion separates the channel-accommodating region from the drain region, both the body portion and the source and drain regions extending adjacent to a surface of the body, the body portion includes a drift region of the first conductivity type for current flow of charge carriers of the first conductivity type to the drain region from a conduction channel in the channel-accommodating region in a conducting mode of operation of the device, and the body portion also includes relief regions of the second conductivity type which are present in the drift region adjacent to the surface, the relief regions and the drift region of the body portion together providing a space charge region under the spread of a depletion layer from the channel-accommodating region to the drain region when a blocking voltage is present between the channel-accommodating region and the drain region in one mode of operation of the device, wherein the semiconductor device comprises a concentric arrangement of the source and drain regions at the surface of the body, in which the drain region extends at least partially around the body portion and the source region, in which the spacing between neighbouring relief regions increases from the channel-accommodating region towards the drain region, and in which the width of at least some of the relief regions decreases towards the drain region.

2. A device as claimed in claim 1, further characterised in that the drain region extends entirely around the body portion at the surface of the body, and in that the relief regions extend radially from the vicinity of the channel-accommodating region towards the drain region.

3. A device as claimed in claim 2, further characterised in that the drain region has a polygonal outline facing the body portion at the surface, and in that the relief regions extend radially towards the polygonal outline.

4. A device as claimed in claim 3, further characterised in that the polygonal outline is either hexagonal or square.

5. A device as claimed in claim 1, further characterised in that the drain region has a mesh shape that extends between neighbouring side-by-side body portions at the surface of the body, and in that each side-by-side body portion extends around a respective channel-accommodating region and source region of the device.

6. A device as claimed in claim 1, further characterised in that the relief regions comprise an inhomogeneous distribution of island regions of the second conductivity type in-between the channel-accommodating region and the drain region, and in that the distribution density of the island regions decreases from the channel-accommodating region to the drain region.

7. A device as claimed in claim 1, further characterised in that at least some of the relief regions extend outward from the channel-accommodating region, and in that a trench-gate extends through the thickness of the channel-accommodating region from the surface to provide the device with conduction channels through the thickness of the channel-accommodating region.

8. A device as claimed in claim 1, further characterised in that the semiconductor body comprises a semiconductor layer on an underlying region of electrically insulating material, and in that the relief regions and the drift region extend through the thickness of the semiconductor layer to the underlying region of electrically insulating material.

9. A device as claimed in claim 1, further characterised in that the drift region also extends under the relief regions, and the body region further includes an underlying region of the second conductivity type which underlies the drift region and which forms a p-n junction with the drift region, and in that a space charge region is provided by the relief regions, the drift region and an adjacent part of the underlying region.