Semiconductor device having damascene interconnection structure that prevents void formation between interconnections
First Claim
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1. A semiconductor device comprising:
- a first insulating layer;
a first interconnection formed in a first groove within the first insulating layer, the first interconnection having a first conductive layer formed in the first groove, a first barrier layer formed on the first conductive layer, and a first main interconnection formed on the first barrier layer, the first inerconnection having a concave portion therein;
a second insulating layer formed on the first insulating layer; and
a second interconnection formed in a second groove within the second insulating layer, the second interconnection having a convex portion that extends into the concave portion of the first interconnection, the first interconnection being electrically connected to the second interconnection by the convex portion that extends into the concave portion.
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Abstract
A semiconductor device is made up of a first insulating layer having a through hole; a first interconnection which comprises a first conductive layer, a first barrier layer, and a first main interconnection, and a second interconnection connected to one of the first conductive layer and the first barrier layer. Accordingly, the semiconductor device can avoid a problem so that the Cu of the first main interconnection transfers from a portion connected to the second interconnection due to cause electromigration, the connected portion becomes a void, and the first interconnection is disconnected to the second interconnection.
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Citations
13 Claims
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1. A semiconductor device comprising:
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a first insulating layer;
a first interconnection formed in a first groove within the first insulating layer, the first interconnection having a first conductive layer formed in the first groove, a first barrier layer formed on the first conductive layer, and a first main interconnection formed on the first barrier layer, the first inerconnection having a concave portion therein;
a second insulating layer formed on the first insulating layer; and
a second interconnection formed in a second groove within the second insulating layer, the second interconnection having a convex portion that extends into the concave portion of the first interconnection, the first interconnection being electrically connected to the second interconnection by the convex portion that extends into the concave portion. - View Dependent Claims (2, 3, 4, 5, 6)
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7. A semiconductor device comprising:
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a first insulating layer;
a first interconnection formed in a first groove within the first insulating layer, the first interconnection having a first conductive layer formed on the first insulating layer within the first groove, a first barrier layer formed on the first conductive layer, and a first main interconnection formed on the first barrier layer and filling the first groove;
a second insulating layer formed on the first insulating layer; and
a second interconnection formed in a second groove within the second insulating layer, the second interconnection extending from an upper surface of the first interconnection into the first insulating layer to sidewalls of the first conductive layer on first and second sides of the first interconnection. - View Dependent Claims (8, 9, 10, 11, 12, 13)
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Specification