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Semiconductor device having damascene interconnection structure that prevents void formation between interconnections

  • US 6,400,031 B1
  • Filed: 06/10/1999
  • Issued: 06/04/2002
  • Est. Priority Date: 06/11/1998
  • Status: Expired due to Term
First Claim
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1. A semiconductor device comprising:

  • a first insulating layer;

    a first interconnection formed in a first groove within the first insulating layer, the first interconnection having a first conductive layer formed in the first groove, a first barrier layer formed on the first conductive layer, and a first main interconnection formed on the first barrier layer, the first inerconnection having a concave portion therein;

    a second insulating layer formed on the first insulating layer; and

    a second interconnection formed in a second groove within the second insulating layer, the second interconnection having a convex portion that extends into the concave portion of the first interconnection, the first interconnection being electrically connected to the second interconnection by the convex portion that extends into the concave portion.

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