Method and apparatus for mutual impedance coupling for component level EMI measurements

• US 6,400,160 B1
• Filed: 06/22/2000
• Issued: 06/04/2002
• Est. Priority Date: 06/22/2000
• Status: Expired due to Term

• Current Assignee: Advanced Micro Devices, Inc.
• Original Assignee: Advanced Micro Devices, Inc.
• Inventors: Sampath, Komarapalayam Velayudham Karikalan
• Primary Examiner(s): Le, N.
• Assistant Examiner(s): SUNDARAM, T R
• Application Number:
  US09/598,461
• Time in Patent Office: 712 Days
• Field of Search: 324/613, 324/627, 324/628, 324/765, 324/750, 324/763
• US Class Current: 324/613
• CPC Class Codes: G01R 31/002 where the device under test is an electronic circuit

Abstract

A method and apparatus for determining EMI compliance provides a conductor that is mutually impedance coupled to an integrated circuit on a semiconductor package. The conductor is attached to a lid covering the integrated circuit and RF noise energy on the lid is mutually impedance coupled to the conductor. By measuring the voltage at the conductor, an indirect measurement of the EMI generated by the integrated circuit is made.

Claims

1. A method for determining EMI compliance performance of a system under test comprising the steps:

operating an integrated circuit at an operating speed, wherein the integrated circuit is a substitutable component of the system under test;

measuring a noise voltage of a lid on the integrated circuit, and

determining a system level EMI value based on the measured noise voltage.

2. The method of claim 1, wherein the step of measuring the noise voltage includes the steps:

capacitively and inductively coupling a conductor to the lid of the integrated circuit; and

measuring a voltage potential difference of the conductor and a ground level, wherein the noise voltage is substantially equal to the voltage potential difference.

3. The method of claim 1, wherein the step of calculating the system level EMI value includes the step:

determining a far-field EMI performance, wherein the system level EMI value is a function of the far-field EMI performance.

4. The method of claim 3 wherein the step of determining the far-field EMI performance includes the step:

determining the far-field EMI performance based on the measured noise voltage of the lid.

5. The method of claim 4, wherein the step of determining the far-field EMI performance includes the steps:

operating a plurality of integrated circuit (IC) devices;

collecting a plurality of far-field EMI measurements for each of the plurality of devices;

collecting a plurality of lid voltage level measurements for each of the plurality of devices;

determining a correlation function between the plurality of far-field EMI measurements and the plurality of lid voltage level measurements; and

correlating the measured noise voltage of the lid of the integrated circuit in the system under test to a far-field EMI performance in accordance with the determined correlation function.

6. The method of claim 1, wherein the step of measuring the noise voltage is performed at a plurality of frequencies.

7. The method of claim 6, wherein each of the plurality of frequencies is a harmonic of the operating speed.

8. The method of claim 6, wherein each of the plurality of frequencies is a harmnonic of an I/O speed.

9. The method of claim 1, wherein the integrated circuit is a microprocessor.

10. A method for determining EMI compliance performance of a system under test comprising the steps:

operating an integrated circuit at an operating speed, wherein the integrated circuit is a substitutable component of the system under test;

capacitively and inductively coupling a conductor to the lid of the integrated circuit; and

measuring a voltage potential difference of the conductor and a ground level,

determining a far-field EMI performance of the system under test as a function of the measured voltage potential difference.

11. The method of claim 10, wherein the step of determining a far-field EMI performance of the system under test includes the steps:

operating a plurality of integrated circuit (IC) devices;

collecting a plurality of far-field EMI measurements for each of the plurality of devices;

collecting a plurality of lid voltage level measurements for each of the plurality of devices;

determining a correlation function between the plurality of far-field EMI measurements and the plurality of lid voltage level measurements; and

correlating the measured voltage potential difference to a far-field EMI performance of the system under test in accordance with the determined correlation function.

12. An apparatus for measuring a voltage potential on a lid of an integrated circuit, comprising:

a circuit board which receives an integrated circuit and configured to operate the integrated circuit;

a conductor configured to operatively attach with the integrated circuit such that it is capacitively and inductively coupled to a lid of the integrated circuit when operatively attached, and

a voltage potential output connected to the conductor and a ground level.

13. The apparatus of claim 12, wherein the voltage potential output further comprises a first end electrically attached with the conductor and a ground level and a second end configured to connect with a meter.

14. The apparatus of claim 12, wherein the circuit board is a computer system motherboard.

15. The apparatus of claim 12, wherein the integrated circuit is a microprocessor.

16. The apparatus of claim 12, wherein the conductor is fabricated from copper.

17. The device of claim 12, wherein the thickness of the conductor is smaller than 6 mm.

18. The device of claim 12, wherein the conductor is a rectangle which has substantially the same surface dimensions as the integrated circuit.

19. The device of claim 12, wherein the conductor is directly adjacent to and positioned on top of the integrated circuit package.

20. The device in claim 19, wherein the conductor is shaped to match a shape of the lid.