Device and method for ion beam etching using space-time detection

• US 6,402,882 B1
• Filed: 01/05/2000
• Issued: 06/11/2002
• Est. Priority Date: 05/28/1997
• Status: Expired due to Term

• Current Assignee: University Pierre et Marie Curie
• Original Assignee: University Pierre et Marie Curie
• Inventors: Briand, Jean-Pierre
• Primary Examiner(s): Mills, Gregory
• Assistant Examiner(s): CROWELL, ANNA M
• Application Number:
  US09/443,093
• Time in Patent Office: 888 Days
• Field of Search: 156/345, 204/298.36, 204/192.34, 216/66, 216/94, 438/712
• US Class Current: 156/345.39
• CPC Class Codes: H01J 2237/0475 decelerating
• CPC Class Codes: H01J 37/3056 for microworking, e.g. etching of gratings, trimming of electrical components trimming of resistors H01C17/22
• CPC Class Codes: H01J 37/317 for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation H01J37/36 takes precedence

Abstract

The invention concerns a device and a method for ion beam etching for producing an etched surface (2) on a semiconductor (1) or insulant The device comprises a positive ion source (20), means for guiding (23) an ion beam (42), a system for detecting the spatial and temporal interaction of the ions and the etched surface, means for interrupting (24) the beam and means for displacing the etched surface relatively to the beam. A processing unit (29) is connected to the displacing means, to the detecting means and to the beam interrupting means and controls, preferably iteratively, successive, operations detecting interaction of the ion beam and the etched surface, interrupting the beam, relative displacing of the etched surface with respect to the beam position and restoring the beam.

Claims

1. An ion beam etching device that enables producing an etched surface (2) on a semiconductor (1) or an insulant comprising:

a positive ion source (20),

means (23) for guiding a beam (42) of the said ions (40) thereby directing the said beam (42) to the etched surface (2), and

means (27) for displacing the etched surface (2) relatively to the ion beam (42),

a system for space-time detection (28, 49) of ion interactions (40) of the beam (42) with the etched surface (2),

means (24) for interrupting the ion beam (42), and

a processing unit (29) linked to the displacement means (27), to the detection system (28) and the beam interruption means (24), controlling the successive operations of;

detecting (40) the interruptions of the ions in the beam (42) with the etched surface (2), beam interruption (42), relative displacement of the etched surface (2) in relation to the position of the beam (42) and restoring the beam (42).

2. An etching device according to claim 1, characterised in that it comprises a system for spatial localisation (25, 26) of the ion beam (42), interposed between the ion source (20) and the etched surface (2).

3. An etching device according to claim 1, characterised in that the beam interrupting means (24) comprise means for applying an electric field that is more or less parallel to the etched surface (2).

4. An etching device according to claim 1, characterised in that the guiding means (23) comprise means for applying a uniform magnetic field (36), diverting the ion beam (42) by 90°

.

5. An etching device according to claim 1, characterised in that the displacing means (27) comprise at least one element selected among a piezoelectric quartz and a ceramic, thereby displacing the semiconductor (1) with respect to the ion beam (42) incident on the etched surface (2).

6. An etching device according to claim 1, characterised in that it comprises a tunnel effect microscope, controlling the etched surface processed (2) for local electric conductivity.

7. An etching device according to claim 1, characterised in that it comprises an atomic strength microscope, performing local topographic control of the etched surface processed (2).

8. An etching device according to claim 1, characterised in that the said surface (2) is occupied by first molecules of the semiconductor or insulant having a first chemical or topographic nature, the ion source (20) is a source of highly charged and low energy positive ions and the etching device comprises means for applying a deceleration voltage, conferring the ions (40) of the beam (42) an average controlled velocity, enabling these ions (40), without contacting the etched surface (2), to transform a plurality of the first molecules of the surface (2) into second molecules with a second chemical or topographic nature, whereby these ions are back-scattered.

9. An etching device according to claim 8, characterised in that the first molecules having external links, whereas the said links are saturated by hydrogen atoms, the means for applying the deceleration voltage enable the ions (40) of the beam (42) to extract electrons from the said plurality of the first molecules of the said surface (2) and to make thus the plurality of the first molecules lose their atoms of hydrogen and to make the corresponding external links pending, whereas the said ions (40) become hollow atoms after having extracted electrons and are back-scattered, and the etching device comprises a source of a product saturating the pending external links in order to form the second molecules, whereas these second molecules are insulating, the source sends the product toward the etched surface (2) further to a passage of the ion beam (42).

10. An etching device according to claim 9, characterised in that the detection system comprises an instrument (49) for measuring the photons transmitted as the electrons extracted from one electronic layer switch to another of the hollow atoms.

11. An etching device according to claim 9, characterised in that the detection system detects electrons transmitted by Auger effect by the hollow atoms.

12. An etching device according to any of the claims 8 to 11, characterised in that the detection system comprises a detection surface (28) detecting the properties of the particles bumping against the detection surface and the back-scattered ions or hollow atoms are directed by the guiding means (23) towards the detection surface (28).

13. An etching device according to claim 8, characterised in that the detection system detects ionised fragments of molecules of the etched surface, sputtered under the effect of the said interactions.

14. An etching device according to claim 13, characterised in that the detection system detects a burst of electrons transmitted under the effect of the said interactions.

15. An etching device according to claim 8, characterised in that the detection system comprises an instrument for measuring the photons transmitted by atoms from the etched surface (2).

16. An etching device according to claim 8, characterised in that detection system detects an electric charge generated in the semiconductor (1) by the said interactions.

17. An ion beam etching method enabling to produce an etched surface (2) on a semiconductor (1) or insulant. In this method:

positive ions are produced,

a beam (41) of the said ions is sent towards guiding means (23),

the ion beam (42) is directed to the etched surface (22) using the guiding means (23),

the etched surface (2) is moved relatively to the ion beam (42), characterised in that the following operations are performed iteratively in order to etch the surface (2) considered;

interactions of ions (40) of the beam (42) with the etched surface (2) are detected spatially and temporally,

the ion beam (42) is interrupted,

the etched surface (2) is moved relatively to the position of the beam (42), and

the ion beam (42) is restored.