Method for controlling optical properties of antireflective coatings

• US 6,403,151 B1
• Filed: 04/18/2000
• Issued: 06/11/2002
• Est. Priority Date: 04/18/2000
• Status: Expired due to Term

• Current Assignee: GlobalFoundries, Inc.
• Original Assignee: Advanced Micro Devices, Inc.
• Inventors: Davis, Bradley Marc, Christian, Craig William, Evans, Allen Lewis
• Primary Examiner(s): CHEN, BRET P
• Application Number:
  US09/552,164
• Time in Patent Office: 784 Days
• Field of Search: 427/578, 427/579, 427/255.29, 427/255.37, 427/255.393, 427/255.394, 427/255.7, 427/166, 427/167, 427/8, 427/162, 204/192.1, 438/786, 438/787, 438/788, 438/791, 438/792
• US Class Current: 427/162
• CPC Class Codes: C23C 16/52 Controlling or regulating the coating process C23C16/45557, C23C16/279 take precedence

Abstract

A method is used by a semiconductor processing tool. The method comprises forming a first layer above a substrate layer, and forming an inorganic bottom antireflective coating layer above the first layer by introducing at least two gases at a preselected ratio into the semiconductor processing tools. A signal indicating that the semiconductor processing tool has been serviced is received, and the ratio of the gases is varied in response to receiving the signal to control optical parameters of the bottom antireflective coating layer to enhance subsequent photolithographic processes.

Claims

1. A method for processing semiconductors, comprising:

forming a first layer above a substrate layer;

receiving a signal indicating that a semiconductor processing tool has been serviced;

forming an inorganic antireflective coating layer above the first layer by introducing at least two gases at a first preselected ratio into said semiconductor processing tools; and

varying the ratio of the gases in response to receiving the signal.

2. The method of claim 1, wherein forming the inorganic antireflective coating layer comprises introducing the at least two gases at a first preselected ratio to achieve preselected optical properties.

3. The method of claim 1, wherein forming the antireflective coating layer comprises introducing silane and nitrous oxide into said semiconductor processing tool.

4. The method of claim 1, wherein forming the antireflective coating layer comprises forming the antireflective coating layer having a thickness in the range of about 100 to 500 Å

.

5. The method of claim 1, wherein receiving the signal comprises receiving the signal in response to the semiconductor processing tool having been cleaned.

6. The method of claim 1, wherein receiving the signal comprises receiving the signal in response to the semiconductor processing tool having been cleaned in situ.

7. The method of claim 1, wherein forming the first layer comprises forming the first layer of at least one of an oxide, an oxynitride, silicon dioxide, a nitrogen-bearing oxide, a nitrogen-doped oxide, silicon oxynitride, a high dielectric constant (high K), where K is at least about 8, titanium oxide, tantalum oxide, and barium strontium titanate.

8. The method of claim 1, wherein forming the first layer comprises forming the polysilicon, aluminum (Al), titanium (Ti) zirconium (Zr), tungsten (W), tantalum (Ta), nickel (Ni), molybdenum (Mo), and cobalt (Co).

9. The method of claim 1, wherein forming the first layer comprises forming the first layer using at least one of chemical vapor deposition (CVD), low-pressure CVD (LPCVD), plasma-enhanced CVD (PECVD), sputtering, physical vapor deposition (PVD), high-density ionized metal plasma (IMP) deposition, and high-density inductively coupled plasma (ICP) deposition.

10. The method of claim 1, wherein varying the ratio of the gases comprises varying the ratio to a second preselected ratio.

11. The method of claim 1, wherein varying the ratio of the gases comprises varying the ratio using measured optical properties of the antireflective coating.

12. A method for processing semiconductors, comprising:

forming a first layer above a substrate layer;

receiving a signal indicating that a semiconductor processing tool has been serviced;

forming an inorganic antireflective coating layer above the first layer, said inorganic antireflective coating layer having optical parameters; and

varying the optical parameters in response to receiving the signal.

13. The method of claim 12, wherein forming an inorganic antireflective coating layer comprises introducing the at least two gases at a first preselected ratio to achieve preselected optical properties, and varying the optical parameters comprises varying the ratio of the two gases.

14. The method of claim 13, wherein forming the antireflective coating layer comprises introducing silane and nitrous oxide into said semiconductor processing tool.

15. The method of claim 13, wherein varying the ratio of the two gases comprises varying the ratio to a second preselected ratio.

16. The method of claim 13, wherein varying the ratio of the two gases comprises varying the ratio using at least one measured optical property of the antireflective coating.

17. The method of claim 12, wherein varying the optical parameters comprises varying the amount of oxidation during a post deposition plasma treatment step.

18. The method of claim 12, wherein forming an inorganic antireflective coating layer comprises introducing the at least two gases at a first preselected ratio to achieve preselected optical properties, and varying the optical parameters comprises applying RF power a preselected period of time after at least one of the gases is introduced.

19. The method of claim 18, wherein applying RF power comprises applying RF power about one second after at least one of the gases is introduced.

20. The method of claim 18, wherein introducing the at least two gases comprises introducing silane and nitrous oxide into said semiconductor processing tool.

21. The method of claim 20, wherein applying RF power comprises applying RF power about one second after silane is introduced.