Method for producing low carbon/oxygen conductive layers

• US 6,403,414 B2
• Filed: 08/07/2001
• Issued: 06/11/2002
• Est. Priority Date: 09/03/1998
• Status: Expired due to Fees

• Current Assignee: Micron Technology, Inc.
• Original Assignee: Micron Technology, Inc.
• Inventors: Marsh, Eugene P.
• Primary Examiner(s): Chaudhari, Chandra
• Assistant Examiner(s): PHAM, THANHHA S
• Application Number:
  US09/923,662
• Publication Number:
  US 20010055869A1
• Time in Patent Office: 308 Days
• Field of Search: 438/239-255, 438/386, 438/387, 438/393, 438/396, 438/3, 438/648, 438/650, 438/656, 438/680, 438/681, 438/683, 438/685, 438/686, 257/300, 257/301, 257/303, 257/306, 257/295, 427/99, 427/123, 427/125
• US Class Current: 438/239
• CPC Class Codes: C23C 16/18 from metallo-organic compounds
• CPC Class Codes: C23C 16/44 characterised by the method of coating C23C16/04 takes precedence
• CPC Class Codes: H01L 21/28556 by chemical means, e.g. CVD, LPCVD, PECVD, laser CVD H01L21/28518 - H01L21/28537 and H01L21/28568 take precedence
• CPC Class Codes: H01L 21/28568 the conductive layers comprising transition metals H01L21/28518 takes precedence
• CPC Class Codes: H01L 21/76849 the layer being positioned on top of the main fill metal
• CPC Class Codes: H01L 21/7687 Thin films associated with contacts of capacitors
• CPC Class Codes: H01L 28/55 with a dielectric comprising a perovskite structure material
• CPC Class Codes: H01L 28/75 comprising two or more layers, e.g. comprising a barrier layer and a metal layer
• CPC Class Codes: Y10S 438/903 Catalyst aided deposition

Abstract

The present invention provides a method for forming a substantially carbon- and oxygen-free conductive layer, wherein the layer can contain a metal and/or a metalloid material. According to the present invention, a substantially carbon- and oxygen-free conductive layer is formed in an oxidizing atmosphere in the presence of an organometallic catalyst using, for example, a chemical vapor deposition process. Such layers are particularly advantageous for use in memory devices, such as dynamic random access memory (DRAM) devices.

Claims

1. A method for use in formation of a capacitor on a substrate comprising the steps of:

forming a surface of a substrate assembly;

forming a first electrode on at least a portion of the surface of the substrate assembly, the first electrode comprising a substantially carbon- and oxygen-free layer deposited in an oxidizing atmosphere in the presence of an organometallic catalyst, wherein the substantially carbon- and oxygen-free layer is formed from a conductive metal-containing precursor, wherein the conductive metal of the precursor is different than the metal portion of the organometallic catalyst;

forming a dielectric material over at least a portion of the first electrode; and

forming a second electrode on at least a portion of the dielectric material.

2. The method of claim 1 wherein the organometallic catalyst comprises a metal portion selected from the group consisting essentially of platinum, paladium, rhodium, and iridium.

3. The method of claim 1 wherein the conductive metal-containing precursor comprises a conductive material selected from the group consisting essentially of titanium, tantalum, ruthenium, osmium, iron, rhodium, cobalt, nickel, iridium, cerium, tungsten, aluminum, copper, and mixtures thereof.

4. The method of claim 3 wherein the substantially carbon- and oxygen-free conductive layer further comprises a metal selected from the group consisting essentially of platinum, paladium, rhodium, and iridium.

5. The method of claim 1 wherein the substantially carbon- and oxygen-free conductive layer comprises a metal from the organometallic catalyst in an amount no greater than about 20% by atomic percent.

6. The method of claim 1 wherein the step of forming the substantially carbon- and oxygen-free conductive layer comprises forming a substantially carbon- and oxygen-free layer by chemical vapor deposition.

7. The method of claim 1 wherein the substantially carbon- and oxygen-free conductive layer comprises a substantially carbon- and oxygen-free conductive barrier layer.