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Optical semiconductor device and method of fabricating the same

  • US 6,403,986 B1
  • Filed: 02/18/1998
  • Issued: 06/11/2002
  • Est. Priority Date: 09/28/1994
  • Status: Expired due to Fees
First Claim
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1. An optical semiconductor device comprising:

  • a plurality of optical semiconductor elements formed on a semiconductor substrate;

    said optical semiconductor elements are arranged at four corners of a square, a dummy section formed in a center of said square; and

    a semiconductor buried layer formed by vapor phase epitaxy so as to bury a portion between said optical semiconductor elements and said dummy section, wherein said optical semiconductor element has a stacked structure of Group III-V compound semiconductor layers made from In, Ga, Al, P, and As, and said buried semiconductor layer is made from semi-insulating InP.

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