Programmable multi-wavelength detector array

• US 6,407,439 B1
• Filed: 08/19/1999
• Issued: 06/18/2002
• Est. Priority Date: 08/19/1999
• Status: Expired due to Fees

• Current Assignee: Epitaxial Technologies, LLC
• Original Assignee: Epitaxial Technologies, LLC
• Inventors: Hier, Harry S., Aina, Olaleye A
• Primary Examiner(s): Wilson, Allan R.
• Application Number:
  US09/378,212
• Time in Patent Office: 1,034 Days
• Field of Search: 257/21, 257/440, 257/443
• US Class Current: 257/440
• CPC Class Codes: B82Y 20/00 Nanooptics, e.g. quantum optics or photonic crystals
• CPC Class Codes: H01L 31/03046 including ternary or quaternary compounds, e.g. GaAlAs, InGaAs, InGaAsP
• CPC Class Codes: H01L 31/035236 Superlattices; Multiple quantum well structures
• CPC Class Codes: H01L 31/101 Devices sensitive to infrared, visible or ultraviolet radiation
• CPC Class Codes: Y02E 10/544 Solar cells from Group III-V materials

Abstract

More than one photodetectors, each sensitive to different wavelengths, are integrated on a common semiconductor substrate. The different photodetectors can be stacked over one another or placed laterally on the common substrate. Gratings may be placed over each photodetector to sharpen the spectral response. Three such photodetectors can form a pixel of an active matrix array for an image sensor. The different photodetectors in each pixel can be multiplexed electronically. The electronic circuits for activating the different photodetectors can be integrated on the same substrate.

Claims

1. An integrated multi-wavelength photodetecting device, comprising:

a semi-insulating compound semiconductor substrate, and

more than one stack of photodetectors each sensitive to multi-ranges of optical wavelengths different from one another, laid laterally over and integrated on said semi-insulating compoud semiconductor substrate.

2. An integrated multi-wavelength photodetecting device as described in claim 1, wherein said substrate is selected from the group consisting of:

InP, GaAs.

3. An integrated multi-wavelength photodetecting device as described in claim 1, wherein said photodetectors are selected from the group consisting of GaAs/AlGaAs, GaInAs/InP(AlInAs), GaInAs/AlGaAs, GaAsSb/AlGaAsSb, GaAsSb/AlInAs (InP) and GaAs/GaInP.

4. An integrated multi-wavelength photodetecting device as described in claim 3, wherein the aluminum composition in said group can be adjusted to select a particular wavelength.

5. An integrated multi-wavelength photodetecting device as described in claim 1, wherein at least one of said photodetectors is a quantum well infrared photodetector, QWIP.

6. An integrated multi-wavelength photodetecting device as described in claim 1, wherein at least one of said photodetectors is a band-to-band photodetector.

7. An integrated multi-wavelength photodetecting device as described in claim 1, further comprising a grating over at least one of said photodetectors.

8. An integrated multi-wavelength photodetecting device as described in claim 1, wherein there are two photodetectors.

9. An integrated multi-wavelength photodetecting device as described in claim 1, wherein there are three photodetectors.

10. An integrated multi-wavelength photodetecting device as described in claim 1, wherein one of said photodetectors has successive layers of AlInAs, GaInAs and AlGaInAs grown over said substrate and sensitive to wavelength of 1.3 μ

m to 1.5 μ

m.

11. An integrated multi-wavelength photodetecting device as described in claim 1, wherein one of said photodetectors has successive layers of GaAsSb, GaInAs, GaAsSb, and InGaAs grown over said substrate and sensitive to wavelength of 3.3 μ

m.

13. An integrated multi-wavelength photodetecting device as described in claim 1, wherein one of said photodetectors has successive layers of AlGaN, GaN and AlGaN grown over said substrate and sensitive to wavelength in the visible to ultra-violet light range.

14. An integrated multi-wavelength photodetecting device as described in claim 1, wherein said device is an active matrix array comprising an array of pixels each comprising more than one photodetector.

15. An integrated multi-wavelength photodetecting device as described in claim 14, wherein the photodetectors in each one of said pixels are activated by multiplexing.

16. An integrated multi-wavelength photodetecting device as described in claim 15, wherein electronic circuits for said multiplexing are integrated on said substrate.

17. An integrated multi-wavelength photodetector device as described in claim 2, wherein said substrate is created from the group consisting of bonding and fusion.

18. An integrated multi-wavelength photodetector device as described in claim 2, wherein said InP based detector are created by growing metamorphic buffer on GaAs.

19. An integrated multi-wavelength photodetector device as described in claim 5, wherein at least one of said QWIP based detector is of n-type.

20. An integrated multi-wavelength photodetector device as described in claim 5, wherein at least one of said QWIP based detector is of p-type.

21. An integrated multi-wavelength photodetector device as described in claim 5, wherein at least one of said QWIP is at normal incidence.

22. An integrated multi-wavelength photodetector device as described in claim 5, wherein said QWIP based detector material is selected from the group consisting of GaInAs/AlAsSb, GaInAs/AlInGaAs, GaInAs/AlGaAsSb, GaInAs/GaInAsP, GaInAs/AlGaInAsSb, GaAsSb/AlAsSb, and GaAsSb/AlGaInAsSb.

23. An integrated multi-wavelength photodetector device as described in claim 5, wherein the well has a 2-DEG, uniformly doped, self assembled quantum dot InAs sub-well.

24. An integrated multi-wavelength photodetector device as described in claim 1, wherein the detectors are grown via a process selected from the group consisting of MBE, CBE, MEE, VPE and OMVPE.

12. An integrated multi-wavelength photodetecting device, comprising:

a semiconductor substrate;

more than one photodetectors each sensitive to a range of optical wavelength different from one another, and integrated on said semiconductor substrate, wherein one of said photodetectors has successive layers of AlInAs, GaInAs, AlGaInAs, InAlAs and GaInAs grown over said substrate and sensitive to wavelength of 8 μ

m to 10μ

m.