Interface texturing for light-emitting device

• US 6,410,348 B1
• Filed: 08/01/2000
• Issued: 06/25/2002
• Est. Priority Date: 07/20/2000
• Status: Expired due to Term

• Current Assignee: Epistar Corporation (Ennostar, Inc.)
• Original Assignee: United Epitaxy Company (Ennostar, Inc.)
• Inventors: Chang, Chih-Sung, Chen, Tzer-Perng, Chang, Holin
• Primary Examiner(s): Nelms, David
• Assistant Examiner(s): Nhu, David
• Application Number:
  US09/630,590
• Time in Patent Office: 693 Days
• Field of Search: 438/9, 438/51, 438/76, 438/88, 438/94, 438/183, 438/911, 438/918
• US Class Current: 438/9
• CPC Class Codes: H01L 21/0275 using lasers
• CPC Class Codes: H01L 33/22 Roughened surfaces, e.g. at the interface between epitaxial layers
• CPC Class Codes: Y10S 438/918 Special or nonstandard dopant

Abstract

An interface texturing for light-emitting device is formed by utilizing holographic lithography. Two coherent light beams are overlaid to cause constructive and destructive interference and thereby periodical alternative bright and dark lines are formed. A wafer coated with photoresist material is exposed under the interference lines. After developing step, a photoresist pattern with textured surface is formed on the wafer. Thereafter, the textured photoresist pattern is transferred to the wafer by etching process and result in a desired interface texturing.

Claims

1. A method of manufacturing an interface texturing for a light-emitting device, comprising the step of:

providing a substrate;

forming a photoresist layer over the substrate;

performing a first exposure step, which is to project a plurality of interference lines formed by a plurality of overlaid coherent light beams to the photoresist layer;

performing a step of develop to form a textured pattern on the surface of the photoresist layer; and

performing an etching process to transfer the photoresist pattern to the substrate.

2. The method according to claim 1, wherein the substrate is a semiconductor substrate.

3. The method according to claim 2, wherein the semiconductor substrate consists of a stack layer of a first window layer, an active layer, and a second window layer.

4. The method according to claim 1, wherein the plurality of overlaid coherent light beams are two overlaid coherent light beams.

5. The method according to claim 1, wherein the etching process is a wet etching process.

6. The method according to claim 1, wherein the etching process is a dry etching process.

7. The method according to claim 1, further comprises forming a transparent layer over the substrate after performing the etching process.

8. The method according to claim 7, wherein a material of the transparent layer comprises epoxy.

9. The method according to claim 1, wherein the plurality of overlaid coherent light beams are a plurality of overlaid coherent laser light beams.

10. The method according to claim 1, wherein after performing the first exposure step, further comprises:

rotating the photoresist layer and substrate 90 degrees; and

performing a second exposure step, which is to project the plurality of interference lines formed by the plurality of overlaid coherent light beams to the photoresist layer.

11. The method according to claim 1, wherein after performing the first exposure step, further comprising:

rotating the photoresist layer and substrate 60 degrees in a same direction;

performing a second exposure step, which is to project the plurality of interference lines formed by the plurality of overlaid coherent light beams to the photoresist layer;

rotating the photoresist layer, and substrate 60 degrees in the same direction continuously; and

performing a third exposure step, which is to project the plurality of interference lines formed by the plurality of overlaid coherent light beams to the photoresist layer.

12. The method according to claim 11, wherein the same direction is clockwise.

13. The method according to claim 11, wherein the same direction is anti-clockwise.

14. The method according to claim 3, wherein the active layer is p-n junction active layer.