Method and apparatus for modeling thickness profiles and controlling subsequent etch process
First Claim
1. A method for controlling wafer uniformity, comprising:
- storing a thickness profile model of a deposition tool;
concurrently depositing a process layer on a plurality of wafers in the deposition tool;
measuring the thickness of the process layer for a sample of the wafers;
generating predicted process layer thicknesses for the wafers not measured based on the process layer thickness measurements and the thickness profile model; and
etching the process layer in an etching tool in accordance with an operating recipe, the operating recipe being based on the predicted process layer thicknesses.
5 Assignments
0 Petitions
Accused Products
Abstract
A processing line includes a deposition tool, a metrology tool, an etch tool, and a process controller. The deposition tool is adapted to form a process layer on a plurality of wafers. The metrology tool is adapted to measure the thickness of the process layer for a sample of the wafers. The etch tool is adapted to etch the process layer in accordance with an operating recipe. The process controller is adapted to store a thickness profile model of the deposition tool, generate predicted process layer thicknesses for the wafers not measured by the metrology tool based on the process layer thickness measurements of the wafers in the sample and the thickness profile model, and modify the operating recipe of the etch tool based on the predicted process layer thicknesses. A method for controlling wafer uniformity includes storing a thickness profile model of a deposition tool; depositing a process layer on a plurality of wafers in the deposition tool; measuring the thickness of the process layer for a sample of the wafers; generating predicted process layer thicknesses for the wafers not measured based on the process layer thickness measurements and the thickness profile model; and etching the process layer in an etching tool in accordance with an operating recipe, the operating recipe being based on the predicted process layer thicknesses.
65 Citations
18 Claims
-
1. A method for controlling wafer uniformity, comprising:
-
storing a thickness profile model of a deposition tool;
concurrently depositing a process layer on a plurality of wafers in the deposition tool;
measuring the thickness of the process layer for a sample of the wafers;
generating predicted process layer thicknesses for the wafers not measured based on the process layer thickness measurements and the thickness profile model; and
etching the process layer in an etching tool in accordance with an operating recipe, the operating recipe being based on the predicted process layer thicknesses. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9)
associating the predicted process layer thicknesses with wafer identification numbers of the wafers;
determining the wafer identification number of a particular wafer being etched;
accessing the predicted process layer thickness of the particular wafer; and
modifying the operating recipe of the etch tool for the particular wafer.
-
-
9. The method of claim 8, wherein associating the predicted process layer thicknesses with wafer identification numbers of the wafers includes associating a particular predicted process layer thickness with a subset of the wafers.
-
10. A processing line, comprising:
-
a deposition tool adapted to concurrently form a process layer on a plurality of wafers;
a metrology tool adapted to measure the thickness of the process layer for a sample of the wafers;
an etch tool adapted to etch the process layer in accordance with an operating recipe; and
a process controller adapted to store a thickness profile model of the deposition tool, generate predicted process layer thicknesses for the wafers not measured by the metrology tool based on the process layer thickness measurements of the wafers in the sample and the thickness profile model, and modify the operating recipe of the etch tool based on the predicted process layer thicknesses. - View Dependent Claims (11, 12, 13, 14, 15, 16, 17)
-
-
18. A processing line, comprising:
-
a deposition tool adapted to concurrently form a process layer on a plurality of wafers;
means for storing a thickness profile model of the deposition tool;
means for measuring the thickness of the process layer for a sample of the wafers;
means for generating predicted process layer thicknesses for the wafers not measured based on the process layer thickness measurements and the thickness profile model; and
means for etching the process layer in an etching tool in accordance with an operating recipe, the operating recipe being based on the predicted process layer thicknesses.
-
Specification