Method for fabricating a semiconductor device
First Claim
Patent Images
1. A method for fabricating a semiconductor device, comprising:
- (a) forming a top metal layer including a bondpad on an integrated circuit including a memory cell;
(b) forming a passivation layer on the top metal layer, for preventing penetration of moisture or impurities;
(c) pattering the passivation layer to expose the bondpad;
(d) forming a metal pattern on the passivation layer connected to the bondpad for bondpad redistribution; and
(e) forming a plurality of insulating layers including a benzo cyclo butene (BCB) layer and a polymer layer on the metal pattern.
1 Assignment
0 Petitions
Accused Products
Abstract
A method for fabricating a semiconductor device reduces soft errors, thereby enhancing reliability of the semiconductor device. In the method, a benzo cyclo butene (BCB) layer having a low water intake rate and an excellent blocking effect against alpha particles is formed between an alpha particle source such as a solder ball and sensitive integrated circuit devices such as a memory cell.
-
Citations
24 Claims
-
1. A method for fabricating a semiconductor device, comprising:
-
(a) forming a top metal layer including a bondpad on an integrated circuit including a memory cell;
(b) forming a passivation layer on the top metal layer, for preventing penetration of moisture or impurities;
(c) pattering the passivation layer to expose the bondpad;
(d) forming a metal pattern on the passivation layer connected to the bondpad for bondpad redistribution; and
(e) forming a plurality of insulating layers including a benzo cyclo butene (BCB) layer and a polymer layer on the metal pattern. - View Dependent Claims (2, 3, 4, 5, 6)
forming the BCB layer on the metal pattern; and
forming a polyimide layer on the BCB layer.
-
-
3. The method of claim 1, wherein forming the plurality of insulating layers comprises:
-
forming a polyimide layer on the metal pattern; and
forming the BCB layer on the polyimide layer.
-
-
4. The method of claim 1, wherein the passivation layer comprises at least one layer selected from a group consisting of a silicon nitride (SiN) layer, a titanium nitride (TiN) layer, a plasma enhanced oxide (PEOX) layer and a phosphor-silicate glass (PSG) layer.
-
5. The method of claim 1, wherein the BCB layer has a thickness between 10 μ
- m and 100 μ
m.
- m and 100 μ
-
6. The method of claim 1, further comprising connecting an external connecting means to the metal pattern after forming the insulating layer.
-
7. A method for fabricating a semiconductor device, comprising:
-
(a) forming a top metal layer including a bondpad on an integrated circuit including a memory cell;
(b) forming a passivation layer on the top metal layer, for preventing penetration of moisture or impurities;
(c) forming a first insulating layer on the passivation layer;
(d) patterning the first insulating layer to expose the bondpad;
(e) forming a metal pattern on the first insulating layer connected to the bondpad for bondpad redistribution; and
(f) forming a second insulating layer including a benzo cyclo butene (BCB) layer on the metal pattern for bondpad redistribution. - View Dependent Claims (8, 9, 10, 11, 12)
-
-
13. A method for fabricating a semiconductor device, comprising:
-
(a) forming a top metal layer including a bondpad on an integrated circuit including a memory cell;
(b) forming a passivation layer on the top metal layer, for preventing penetration of moisture or impurities;
(c) forming a first insulating layer including a benzo cyclo butene (BCB) layer on the passivation layer;
(d) patterning the first insulating layer to expose the bondpad;
(e) forming a metal pattern on the first insulating layer connected to the bondpad for bondpad redistribution; and
(f) forming a second insulating layer on the metal pattern. - View Dependent Claims (14, 15, 16, 17, 18)
-
-
19. A method for fabricating semiconductor device comprising:
-
(a) forming a top metal layer on a semiconductor substrate on which an integrated circuit is formed;
(b) forming a passivation layer on the top metal layer, the passivation layer multiple layers one of which is a benzo cyclo butene layer;
(c) patterning the passivation layer to expose the bondpad;
(d) forming a metal pattern for bondpad redistribution connected to the bondpad; and
(e) forming an insulating layer on the metal pattern. - View Dependent Claims (20, 21, 22, 23, 24)
forming a first layer of silicon nitride (SiN) or titanium nitride (TiN);
forming a second layer of BCB; and
forming a third layer of phosphor-silicate glass (PSG) or plasma enhanced oxide (PEOX).
-
-
23. The method of claim 22, wherein the second layer is between the first and third layers.
-
24. The method of claim 19, wherein the insulating layer is formed of polyimide.
Specification