×

Method of fabricating semiconductor device

  • US 6,410,959 B2
  • Filed: 09/21/2001
  • Issued: 06/25/2002
  • Est. Priority Date: 08/28/1997
  • Status: Expired due to Fees
First Claim
Patent Images

1. A metal insulator semiconductor field effect type semiconductor device comprising:

  • a semiconductor body having first and second main surfaces which are opposite to each other, said first major surface including an element forming region for forming metal insulator semiconductor field effect type elements and a gate lead-out region for forming a gate lead-out electrode of said elements, said gate lead-out region adjoining said element forming region;

    a plurality of trench portions extended from one side of said semiconductor body adjoining said gate lead-out region to the other side of said semiconductor body located in said element forming region apart from said gate lead-out region in a first direction from said gate lead-out region to said element forming region, so that said element forming region divided into a plurality of transistor element portions sandwiched between adjacent ones of said plural trench portions, each of said trench portions having a sidewall height from a bottom thereof in said semiconductor body to a top surface of said first major surface;

    a first insulation film formed over the sidewall and bottom of each of said trench portions and over the top surface of said first major surface in said gate lead-out region;

    an electrode conductive film disposed over said first insulation film so as to fill each of said trench portions with said electrode conductive film, and disposed over the top surface of said major surface in said gate leadout region but leaving said plural transistor element portions uncovered, said electrode conductive film extended, at said one sides of the plural trench portions, from each of said trench portions onto the top surface of said first major surface in said gate lead-out region;

    said electrode conductive film having a plurality of first portions which are respectively disposed in said trench portions, each of said first portions having a top surface in each said trench portion at a height from said bottom of each said trench portion, said height of each said first portion is lower than that of said sidewall of each said trench portion, said plurality of first portions of the electrode conductive film serving as gate electrodes, respectively;

    said electrode conductive film having a second portion which is extended over the top surface of said first major surface in said gate lead-out region and is formed integrally with said first portions, said second portion of the electrode conductive film serving as a gate lead-out electrode electrically and commonly connected to said first portions of the electrode conductive film;

    a second insulation film formed over said electrode conductive film and over said plural transistor element portions, said second insulation film having a first contact hole, which exposes said second portion of the electrode conductive film disposed over said gate lead-out region, and having second contact holes, which expose said plural transistor element portions respectively;

    a gate interconnection conductive film overlying said gate lead-out region and contacted with said second portion of the electrode conductive film through said first contact hole of the second insulating film; and

    a source interconnection conductive film overlying said element forming region, and contacted with said transistor element portions through said second contact holes of the second insulating film so as to electrically connect said transistor element portions in common, said source interconnection conductive film having portions extended across said trench portions.

View all claims
  • 3 Assignments
Timeline View
Assignment View
    ×
    ×